Q0044 Search Results

1720b

Contextual Info: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data

Contextual Info: G M 82C 650 GoldStar GOLDSTAR ELECTRON CO ,LTD GoldStar Sound Generator 1. G eneral Description The GM82C650 is a high performance digital sound generator, which is applicable for many musical applications like PC sound card, sound module, karaoke, keyboard,and

Contextual Info: S u p ertex inc. M VP0104N6/VP0104N7 VP0106N6/VP0106N7 P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package B Voss/ B V oos max 14-Pin P-DIP 14-Pin C-DIP* -40V 8£2 VP0104N6 VP0104N7 -60V 8£2 VP0106N6 VP0106N7

ECG956

Abstract: philips tantalum Capacitors ECG966 transistor ECG128 circuit diagram of 12v battary charger ECQ966 15A Adjustable Positive Voltage Regulator ecg128 A-254168-2 AC voltage regulator 12v output 5 pin
Contextual Info: PHILIPS E C G INC 17E {^53^20 Positive Voltage Regulator Features • Adjustable output down to 1.2V • Guaranteed 1.5A output current • Line regulation typically 0.01 % /V • Load regulation typically 0.1% • Current limit constant with temperature • 100% electrical burn-in

BDY13

Abstract: Q62702-D378 Q62702-D378-V1 Q62702-D378-V2 BDV13 bdy12 bdy 12
Contextual Info: 2SC D • ÔSBSbQS QQQHMBB T H S I E G NPN Silicon Planar Transistors SIEMENS AKTIENÛESELLSCHAF BDW 25 BDY 12 ° - BDY 13 433 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

TRANSISTOR REPLACEMENT ECG 130

Abstract: ECG950 ECG988 ECG977
Contextual Info: PHILIPS E C G INC 17E fj • bbSBTSfl G0G44D7 1 ' ECG ECG950, ECG951, ECG977, ECG981, ECG988 3-Terminal Positive Voltage Regulator Sem iconductors .200 " - 5.08 -1 Features • Output current of 100 m A • Internal thermal overload protection • Output transistor safe area protection

Contextual Info: Ö235b05 QGD4440 7 « S I E Û SSC D PNP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04440 7 "- l l - z ! BDX27 BDX28 D - BDX 29 BDX 30 BDX 27, BDX 28, BDX 29, and BDX 30 are epitaxial PNP silicon power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

Contextual Info: Microsem i a m m m w m enm w n, at m a 5 8 0 P le a s a n t S t. W a te rto w n , M A 0 2 1 7 2 P H : 61 7 9 2 6 -0 4 0 4 2N3501 F A X : (6 1 7 ) 9 2 4 -1 2 3 5 Features 150 Volts 500mAmps • M e e ts M IL -S -1 9 5 0 0 /3 6 6 • C o lle c to r-B a s e V o lta g e 1 5 0 V

Contextual Info: A p p l ic a t io n N o t e AVAILABLE AN61 X25160 16K XiGH 2K x 8 Bit SPI Serial E2PROM With Block Lock Protection FEATURES DESCRIPTION • 2MHz Clock Rate • SPI Modes 0,0 & 1,1 • 2K X 8 Bits — 32 Byte Page Mode • Low Power CMOS — <1|±A Standby Current

5304 smd 8 pin

Abstract: isplsi device layout
Contextual Info: Lattice ispLSI and pLSI 1024 ¡ Sem iconductor i Corporation H igh-D ensity Program m able Logic Features Functional Block Diagram • HIGH-DENSITY PROGRAMMABLE LOGIC — — — — — High-Speed Global Interconnect 4000 PLD Gates 48 I/O Pins, Six Dedicated Inputs

Contextual Info: IB M 1 1 M 2 6 4 0 H IB M 1 1 M 2 6 4 0 H B 2M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write non-parity applications • System Performance Benefits: • 2Mx64 Fast Page Mode DIMM - • Performance:

KE524505

Contextual Info: 0004445 7 « P R X P 0 IdEREX INC T - 3 3 ~ 3 £>" m M B Œ KE524505 X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Six-Darlington Transistor Module

BDW 16.24K5000-C2-5

Contextual Info: 2SC D • flSBSbQS DQQMMBB T H S I E 6 ot* NPN Silicon Planar Transistors BDW 25 BDY 12 SIEMENS AKTIENGESELLSCHAF 433 0-BDY 13 BDW 25, BDY 12, and BDY 13 are epitaxial NPN silicon planar power transistors in SOT 9 case 9 A 2 DIN 41875 . The collector is electrically connected to the case.

c 879 transistor

Abstract: darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor
Contextual Info: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 8 7 9 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 4 1 8 6 9 , sheet 4 . These darlington transistors

BF245

Abstract: BF 245 2SC 1885 transistor BF 509 Q62702-F236 bf245b bf245a transistor BF245 A BF 245 C Q62702-F205
Contextual Info: 2SC D • A23SbOS Q0Q44S7 2 « S I E G T-St-Z^ . N-Channel Junction Field-Effect Transistors BF 245 A BF 245 B o - BF245C SIEMENS AKTIEN6ESELLSCHAF 57 BF 24 5 A, B, and C are N-channel junction field-effect transistors in plastic package similar

Q0051

Abstract: Q0032 Q0043 Q004
Contextual Info: Application Note Frequently Asked Questions on Development Tools and Products Fujitsu Mikroelektronik GmbH, Microcontroller Application Group History 2nd August 99 HLO Original version of master and database Note: This document is currently under development. This first version covers only a