Q0043 Search Results

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

HY5116100B

Contextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

transistor BD 430

Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

VN1710L

Contextual Info: VN1706 VN1710 Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON I d (ON) b v dgs (max) (min) TO-39 TO-92 TO-220 170V 6Q 1.0A VN1706B VN1706L VN1706D 170V 10£2 1.0A — VN1710L — Advanced DMOS Technology High Reliability Devices

ecg955

Abstract: ECG955M
Contextual Info: PHILIPS E C G INC 17E D ECG Semiconductors • ^ 5 3 1 2 0 0D0431D fl ■ ECG833 ■ t Timing Circuit 4 I Features • Timing from microseconds through hours • Operates in both astable and monostable modes • Output can drive TTL f •2 6 0 " 6 .6 0 MAX.

Contextual Info: @ SPT S P T 7 9 2 2 12-BIT, 30 MSPS, TTL, A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E European “Pro Electron” Registered T y p e s _ 7MLböSl 0D0H310 Tfl7 WMQTY CNY35 Optoisolator AC Input GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY35 consists o f two gallium arsen id e, in frared

Contextual Info: October 1992 Edition 1.0 FUJITSU DATA S H E E T F2MC-8L MB89650A SERIES 8-BIT MICROCONTROLLERS MB89653A/655A/656A/P657A/MB89PV650A DESCRIPTION T he M B89650A seríes of m icrocontrollers has been developed as a general-purpose product in the F2M C -8 l M B 8 9 6 00 fam ily of 8-bit single-chip m icrocontrollers which is

Contextual Info: Integrated Circuit Systems, Inc. ICS9148-11 Frequency Generator & Integrated Buffers for PENTIUM General Description Features Generates four processor, six bus, one 14.31818MHzand 12 SDRAM clocks. Synchronous clocks skew matched to 250ps window on CPU, SDRAM and 500ps window on BUS clocks.

semikron skiip 10 neb 06

Abstract: Semikron skiip 20 neb 06
Contextual Info: se MIKR on SKiiP 20 NEB 06 - SKiiP 20 NEB 06 I Absolute Maximum Ratings Symbol Conditions ’> Inverter Vces Vges Theatsink ~ 25 / 80 °C lc tp < 1 ms; Theatsink “ 25 / 80 °C Icm Theatsink —25 / 80 °C If = _lc Ifm = - I cm tp < 1 mS, Theatsink = 25 / 80 C

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

transistor BD 800

Abstract: transistor BD 110
Contextual Info: ESC D • A235bQ5 DDQMB? 4 M SIEG NPN Silicon Planar Transistor SIEMENS A K T I E N6 ES EL LSC HA F BD 524 0^ 377 T - 3 3 - a ST D - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

LM series voltage regulators

Abstract: Mallory VPR
Contextual Info: 1.0 & 3.0 AMP MINICONVERTER SWITCHING REGULATORS TEL: 805-498-2111 FEATURES • Pin for pin interchangeable with National’s LM2575/LM2576 Series • DC-to-DC buck or buck/boost converter requiring only 4 support components • Fixed or adjustable voltages

189-227

Contextual Info: AC Capacitors AC Capacitors: Motor-start Type ETW—Electrolytic Designed to operate for a minimum o f 50,000 starts, Type ETW electrolytic capacitors are ideal for motor-starting applications such as washing machines and refrigerators. Performance Highlights

MSC2312YS9

Abstract: c2312 54SMO
Contextual Info: O K I SEMICONDUCTOR C U SII GROUP IDE D j| ^ 7 5 4 5 4 0 000M3Sti 1 | » m ie o n tìu G to * * •' 111 MSC2312YS9/KS9 • J ' . 4 " 1 ,0 4 8 ,5 7 6 BY 9 B IT D Y N A M IC RAM M O D ULE GENERAL D E S C R IP TIO N The Oki MSC2312YS9/KS9 is a fully decoded, 1,048,576 words X 9 bit CMOS dynamic random

Contextual Info: S ta n d a rd P r o d u c t _w_ PMC I/ l ^ I PMC-Sierra, Inc. ISSUE 3 PM7375 LASAR-155 LOCAL A m SAR & PHYSICAL LAYER 1. F E A T U R E S • Single-chip Peripheral Component Interface PCI Bus Local ATM Network Interface using SONET/SDH framing at 155.52 or 51.84 Mbit/s and ATM

transistor BD 110

Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Contextual Info: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

ns 4203

Contextual Info: IB M 1 1 M 1 6 4 0 L § € = ¥ ! ^ = -= 7 = 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx64 Fast Page Mode DIMM • Performance: -60 -70 Wc i RAS Access Time 60ns 70ns tcAC i CAS Access Time 20ns 25ns

Contextual Info: se MIKRO n SKiiP 21 NEB 06 - SKiiP 21 NEB 06 I Absolute Maximum Ratings S ym bol [C o n d itio n s 11 Values Units 600 ±20 2 0 /1 4 4 0 /2 8 2 5 /1 5 5 0 /3 0 V Inverter & Chopper Vces Vges T h eatsink = 25 / 80 °C lc tp < 1 ms; T h eatsink —25 / 80 °C

CS8402-CS

Abstract: Biphase mark code CONVOY PROTECTION DEVICE dm 311 convoy protection AES3-199X PE-65612 IEC-908 totx174 CS8401
Contextual Info: CRYSTAL m 3fiE J> SEMICONDUCTOR m 25M b3E4 n u 3 £ zy szy s~ 3 !3 B m s a D0G4304 1 ESCYS CS8401 CS8402 Semiconductor Corporation jT -7 5 -^ -Q 6 _ Digital Audio Interface Transmitter Features General Description • Monolithic Digital Audio Interface

Contextual Info: 3.0 AMP LOW DROPOUT POSITIVE VOLTAGE REGULATORS TEL: 805-498-2111 FEATURES • Low dropout performance 1.2V max. for EZ1587A 1.3V max. for EZ1587 • Full current rating over line and temperature • Fast transient response • ±2% total output regulation over line, load,

itv.v59.031

Contextual Info: 160 Series • Metallized Polyester / Radial Leads ■ Radial Leaded 10 mm to 27.5 mm GENERAL SPECIFICATIONS ■ Non Inductively Wound ■ Non-Polar ■ Flame Retardant Case Meets UL94V0 Operating Temperature: -55°C to +125CC with voltage derating above 85°C

Contextual Info: _ bq3285 BENCHMARQ Real-Time Clock RTC > Calendar in day of the week, day of the month, months, and years, with automatic leap-year adjustment Features >- Direct clock/calendar replacement for IBM8* AT-compatible computers and other applications >• Functionally compatible with the

Contextual Info: M O SEL VITELIC V53C808H HIGH PERFORMANCE 1Mx 8 BIT EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORM ANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (^ aa) 18 ns 20 ns 22 ns 24 ns Min. Extended Data Out Mode Cycle Time, (tpC)