Q004 Search Results

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

transistor d 1933

Contextual Info: 2SC D • ñE3SbQS Q0045CH b H S I E NPN Silicon RF Transistor G| SIEMENS AKTIENGESELLSCHAF : 0^509 -2 A BF 505 0 - BF 5 0 5 is an NPN silicon planar RF transistor in TO 9 2 plastic package 10 A 3 D IN 41868 . The transistor is particularly intended for use in V H F amplifiers in common emitter configuratin, VH F mixers and VHF/UHF oscillators.

SK3466

Abstract: SK3559 SK3444 SK3441 SK3528 SK3710 SK3452 sk3444 transistors SK3467 SK3642
Contextual Info: TH OM S O N / D I S T R I B U T O R I B IPO LAR TRANSISTORS 5ÖE D • = 1 0 ^ 0 7 3 Q004flPl 5T5 ■ TCSK com. Maximum Ratings K E Type Device Polarity & Material Breakdown Voltages Application 'complementary device type SK3441 Device Power Dissipata Collector

BA5206BF

Abstract: BA3304 BA5206 BA3404F BA340 64mw
Contextual Info: ' t ' — 'T < IC /IC s for Audio Applications ' ROHM CO LTD B Â 5 2 MGE D 6 B BA5206BF Hi 7à2atn cì Q0045tì3 5 Q RHP1 3V-64mW x j l 77;1 //\° 7 -7 7> 7 ° 3V-64mW Dual Power Amplifier F T-77.2Ì • ii-JfiTfiÉS/'Dim ensions Unii :min BA5206BF(i,3V ;^(7) a . 7

Contextual Info: / / / / New Prpduct 'j§ 8 4 3 0 • 8440series 2 row type 32 44 50 64 90 Inverse DIN, VA product l<3o’ Pin Receptacle 8 4 3 1 -X X X -iii B ± 0 .1(B±0.004) 2 -0 2 .8 ± j)' E ± 0 .l (E±0.004) 294-^0.8! q' (<60.031 +0.004 - 0 ) ± 2.54± 0.05 I2-0O.1IO^q004)

SIEMENS THYRISTOR BRY 20

Abstract: 7809A SIEMENS thyristor BRY 300 BRY20 SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga ) is electrically connected to the case. The BRY 20 is particularly

80196 microcontroller pin diagram

Contextual Info: • 'CIRRUS LOGIC 213bb3T Q0047MI4 b^T * C I R CL-SH4600 Advance Product Bulletin FEATURES General ■ Automated PC XT/AT disk controller ■ Complete hardware automation of host-to-disk and disk-to-host transfers ■ Automatic update of PC/AT task file registers

ER1001

Abstract: ER1007
Contextual Info: TAIWAN LITO N E L E C T R O N I C • HIE D LITE ? I SEMICO NDUCTO RS m flfl35bRS Q0041AD ■ TLIT ER1001 thru ER1007 F o v ^ VO LTA G E RANGE 50 to 1000 Volts C U R R EN T 1.0 Ampere FEATURES • • Diffused junction • Low leakage • Low forward voltage drop

Contextual Info: EX A R 3422618 CORP TI De J EXAR CORP 34E2ti]jö Q0047bM 91D 04764 XR-J100 Master-Chip Linear, bipolar NPN Transistors Chip Size: 80 x 75 mils Small Signal: 36 Medium: 2 Total Components: 188 Dual PNP Transistors: 12 Bonding Pads: 18 Max. Operating Voltage: 20V

Contextual Info: HS-ODC-H24-Q004 HS-DDC-H21 -0003 M&-DDC-H24-0ÖÖ4 HS-0DC-H21-0003

ECG987

Abstract: ECG177 ECG387 QGG4514 aish activa 150
Contextual Info: PHILIPS E C G INC 17E bbSBTEô Q004507 S • ECG987 Quad Op Amplifier Sem iconductors Features • Compatible with all forms of logic • Power drain suitable for battery operation • Internally frequency compensated for unity gain • Large DC voltage gain — 100 dB

ECG1111

Abstract: ODD4037 tv schematic diagram PHILIPS CI 7405 schematic diagram of 24 DC power supply
Contextual Info: 17E Q PHILIPS E C G INC • 1^53*126 Q004D3t. 3 ECG1111 AUDIO AM PLIFIER semiconductors SCHEMATIC DIAGRAM CONNECTION DIAGRAM top view -?vs • POWER 4 W (24 V - 1611) • s e L jM j e n t e r i n g BIAS • LOW QUIESCENT OUTPUT CURRENT • NO CRO SS OVER DISTORTION

A751

Abstract: DIN 41872 BU205
Contextual Info: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor BU 205 O' SIEMENS A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is

CI 7405

Abstract: ECG1107 TE1820 te-1820 500 watts power amplifier circuit car RL4A EC01107 40 watts power amplifier rl 8 ohms 4 ohms
Contextual Info: PHILIPS 17E E C G INC bbsaisa Q004G1S b T-74-05-01 E C G 1 1 0 7 AUDIO POWER AMPLIFIER semiconductors A U D IO POW ER A M PLIFIER , C A R STEREO and C A R R A D IO OUTPUT A P P L IC A T IO N S OUTLINE • 4 Watts Typical at 13 .2 V • High G ain M A X IM U M R A T IN G S Ta = 25°C

9606

Abstract: 9719
Contextual Info: 2ôl2b72 Q0047b5 5b2 2mm X 4mm Discrete LED Dîalîght Standard Efficiency Tinted 521-9606, -9607, -9658, -9719 a 93 I.JS7] t 2.54 J [.100 PART NO. LED COLOR 521-9606 521-9607 521-9658 521-9719 G reen Diffused Yellow Diffused Red Diffused Blue C lear ._

Contextual Info: • Receptacle 3 3 'SOtdfeiRsy'fyp C L705-0002-5 HFD I-2R-B A A C L705-0003-8 H FDI-2R-B(B) B CL705-Q004-0 H FDI-2R-B(M ) M C L 7 0 5 -0005-3 HFD I-2R-B(S) S ■ Connectors with Cable Attached Product N um ber Connector Moontmg End H F D I-F P 1 -F 3 B W -L

ECG1222

Abstract: 68011
Contextual Info: P H I L I P S E C G INC LbS31Sa 17E Q00472Ô T T -74-Q 5-01 EC G 1222 AF POW ER AM PLIFIER Se m ¡condii et òr s 24ft" 8.23 • LOW N O IS E CHARACTERISTIC • EXCELLENT RIPPLE REJECTIO N 141312s ìi K _o t o ftfn i fni il y In ii-»i-in EW 709" (16) .989"

Contextual Info: ROHM CO LTD t 40E 7 Ô S Û cl cn D Q004M51 BA4230AF I C / I C s for Audio Applications < 7 ESRHM ~7z 7 7 ~ 0 S- 0 ~ 7 1.5V F M /A M -IF y X x A I C 1.5V F M /A M -IF Sytem IC BA4230AF i, 1.5V-fey h f flt C & fS U fc F M / A M -lF y X x M C T 't o 18 17 16 15 14 13 12 11 10

BRY20

Abstract: SIEMENS THYRISTOR SIEMENS THYRISTOR BRY 20 Q60217-Y20 200 hn PNPN SIEMENS FAST THYRISTOR
Contextual Info: 55C D • fl23SbaS Q0047b3Jj M S I E 6 ' ! PNPN Thyristor Tetrode 25C 04763 D 1 _ BRY20 If '_ SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case 5 C 4 DIN 41873 . The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly

Q68000-A751

Abstract: TO115 BU205
Contextual Info: 5SC D • fl23SbOS Q004Ô3Ô 3 ■ SIE6 r - 3 3- o 7 NPN Silicon Power Transistor SIEMENS BU 205 A K T I E N G E S E L L S C H A F 34838 BU 205 is a triple diffused silicon NPN power switching transistor in a TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength. It is

HY5116100B

Contextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: IB M 1 1 M 4 6 4 0 C IB M 1 1 M 4 6 4 0 C B 4M X 64 DRAM MODULE • Au contacts • Optimized for byte-write non-parity applications Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - • 4Mx64 Fast Page Mode DIMM

IG8T

Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
Contextual Info: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage

Contextual Info: SQS840EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET 40 RDS(on) () at VGS = 10 V 0.0166 RDS(on) () at VGS = 4.5 V 0.0219 ID (A) • AEC-Q101 qualified d