PT 2102 IC Search Results

Transistor 2n6099

Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.

RCA 40872

Abstract: rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594
Contextual Info: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.

300W TRANSISTOR AUDIO AMPLIFIER

Abstract: 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . V C E to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2N6103

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER 40594 Complementary Darlington Audio Power Amplifier 2N5781 2N5954 2N6107 2N6248 2N6292 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 200 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

Contextual Info: MSI ELECTRONICS INC 3SE £ E3 5b5bMbb 000036b T E M S I T - 0 7 -/7 - HERMETICALLY SEALED GL AS S PACKAGED TUNING DIODES 08 D S D elect ABRUPT - HYPERABRU PT U E L E C T R IC A L C H A R A C T E R IS T IC S T a = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS

40372

Abstract: 2N3054 2N5575 2N1482 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

2n5578

Abstract: 2N210 2N5298 2N1482 2N3054 2N344 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

2N3055 TO-3

Abstract: pt 35c 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 2n6254
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

rca 40411

Abstract: RCA 40411 transistor 2N6259 RCA 2N5295 RCA 2n3773 rca 2n3055 application note 40411 transistor audio amplifier with rca 40411 2N3055 pnp series voltage regulator transistor BDY29
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

2n5298 40629

Abstract: npn darlington 400v 15a 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 2N5415
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. Py « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

2N5296 RCA

Abstract: RCA 40373 amplifier ocl 2n3055 2N3055 RCA 40347 2N5415 2N3442 2N6262 40328 2N1482
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m ax. • 2 6 0 W m ax. <e “ 1 .6 A m ax. le a 1 . S A m ax. lc » 3.S A m ax. lc * 4 A m a x. lc a 4 A m ax. le • 3 A m ax. le “ 3 A m a x. le - 7 A m ax. lc a 1 S A m ax.

40410

Abstract: 2N5293 40362 2N6474 JAN 40394 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

RCA 40410

Abstract: rca 40362 40410 RCA transistor 40406 RCA transistor 40319 transistor 40410 TRANSISTOR 40391 RCA transistor 40410 2N5296 RCA 2N6474
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

Contextual Info: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed • Low-current PNP inputs Highly reliable, ultra-fast programming Platmum-Silicide • High-current open-collector and three-stat fuses • Fast chip select

sem 2105

Abstract: 2E12 FSL9110R4 JANSR2N7411 IC SEM 2105 sem 2106
Contextual Info: JANSR2N7411 Formerly FSL9110R4 2.5A, -100V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 2.5A, -100V, rDS ON = 1.30Ω The Discrete Products Operation of Intersil Corporationhas developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

PT 2102 ic

Abstract: MIL-PRF-19500 TRANSISTOR SUBSTITUTION DATA BOOK 2N3847 LM 3041 2N3846
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 27 September 1999. INCH-POUND MIL-PRF-19500/412B USAF 27 July 1999 SUPERSEDING MIL-S-19500/412A(USAF) 19 June 1990 PERFORMANCE SPECIFICATION SHEET

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

ULF 7segment

Abstract: cd4611
Contextual Info: Tex a s In s t r u m e n t s CD4511B Types Data sheet acquired from Harris Sem iconductor S C H S072 CMOS BCD-to-7-Segment Latch Decoder Drivers High-Voltage Typès 20-Volt Rating .• a w i. m a s \ b - s e \ i r » CD4511B types are BCD-to-7-aegment la tc h decoder drivers constructed w ith

2N6175

Abstract: 2N5296 RCA 2N5415 2N6180 2N6491 SWITCH 2N3439 2N3440 2N5840 2N6079 2N6177
Contextual Info: H IG H -V O L T A G E N -P-N & P-N-P P O W E R T Y P E S 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32a 42x42

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

SIL 2104

Abstract: C67401 C67401A C67402 C67402A
Contextual Info: C67401 C67401A C67402 C67402A Advanced Micro Devices First-In First-Out FIFO 64x4, 64x5 Cascadable Memory ORDERING INFORMATION DISTINCTIVE CHARACTERISTICS • Choice of 15 and 10 MHz shift-out/shift-in rates Part Number • Choice of 4-blt or 5-bit data width

C67401

Abstract: C67401A C67402 C67402A
Contextual Info: Advanaoed C67401 C67401A C67402 C67402A First-In First-Out FIFO 64x4, 64x5 Cascadable Memory DISTINCTIVE CHARACTERISTICS Micro Devices ORDERING INFORMATION • Choice of 15 and 10 MHz shttt-out/shlft-ln rates • Choice of 4-blt or 5-bit data width • TTL Inputs and outputs