POWERDI3333 Search Results

Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically

DMP4015SPS

Abstract: DMP4025LSD
Contextual Info: ZXBM1021 SINGLE PHASE VARIABLE SPEED MOTOR CONTROL PRE-DRIVER Pin Assignments The ZXBM1021 is a high performance, low noise, single-phase, VCC For system flexibility the motor speed can be controlled by either an H+ H- speed control and current control suitable for fan and blower motors.

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 8mΩ @ VGS = -4.5V -14A V(BR)DSS -20V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 80V 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC = +25°C 35A 30A • Low RDS(ON) – ensures on state losses are minimized • Excellent Qgd x RDS(ON) Product (FOM)

Contextual Info: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS 100% Unclamped Inductive Switch (UIS) test in production Low RDS(ON) – ensures on state losses are minimized

Contextual Info: DMN3029LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits RDS(ON) ID TA = 25°C 18.6mΩ @ VGS = 10V 8.0 26.5mΩ @ VGS = 4.5V 6.5 • • • • • • • 30V Description and Applications

Contextual Info: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A • Occupies just 33% of the board area occupied by SO-8 enabling

Contextual Info: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized

dmg7401sfg

Contextual Info: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON max ID max TA = +25°C 13m• @ VGS = -10V -9.8A 25m• @ VGS = -4.5V -7.0A Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits Product Summary Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products -9.8A • Occupies just 33% of the board area occupied by SO-8 enabling

Contextual Info: DMG7408SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 23mΩ @ VGS = 10V 7.0A 33mΩ @ VGS = 4.5V 6.0A V(BR)DSS • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized

Contextual Info: DMG7401SFG P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON max ID max TA = +25°C 13mΩ @ VGS = -10V -9.8A 25mΩ @ VGS = -4.5V -7.0A • Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher

DMN3030LFG

Contextual Info: DMN3030LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Green Product Summary Features V BR DSS RDS(ON) Package 30V 18mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V POWERDI 3333-8 • ID TA = +25°C 8.6A 5.5A Low RDS(ON) – ensures on state losses are minimized 

Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMN3024SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 23mΩ @ VGS = 10V 7.5A 33mΩ @ VGS = 4.5V 6.3 A • 100% Unclamped Inductive Switch (UIS) test in production • • Low RDS(ON) – ensures on state losses are minimized

Contextual Info: DMG7410SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary V BR DSS Features and Benefits • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 8.0 A •

Contextual Info: DMN3029LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

DMG7410SFG

Contextual Info: DMG7410SFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features V BR DSS RDS(ON) 30V 20mΩ @ VGS = 10V 27mΩ @ VGS = 4.5V ID TA = 25°C 8.0 A 6.5 A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically

Contextual Info: DMP3017SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 10mΩ @ VGS = -10V -11.5A V(BR)DSS -30V Features and Benefits 18mΩ @ VGS = -4.5V • Low RDS(ON) – ensures on state losses are minimized  Small form factor thermally efficient package enables higher

Contextual Info: DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary RDS ON ID TA = +25°C 8.5mΩ @ VGS = 10V 30A 10.5mΩ @ VGS = 4.5V 25A V(BR)DSS 30V Features Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TC = +25°C 7.5mΩ @ VGS = 10V 60A 11.5mΩ @ VGS = 4.5V 49A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT 60V Features and Benefits • Low RDS(ON) – Ensures on State Losses Are Minimized