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DMG7702SFG Datasheets (4)

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Diodes Incorporated

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
DMG7702SFG		Diodes Incorporated	30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI	Original	PDF	175.92KB	8
DMG7702SFG		Diodes Incorporated	30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI	Original	PDF	175.92KB	8
DMG7702SFG-13		Diodes Incorporated	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A POWERDI	Original	PDF		8
DMG7702SFG-7		Diodes Incorporated	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A PWRDI3333-8	Original	PDF		8

DMG7702SFG Price and Stock

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Diodes Incorporated


Diodes Incorporated DMG7702SFG-13 - Tape and Reel (Alt: DMG7702SFG-13)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DMG7702SFG-13	Tape & Reel			3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	DMG7702SFG-13		1,339		1	1 $1.50 10 $1.50 100 $0.56 1000 $0.39 10000 $0.39	Buy Now
Quest Components ()	DMG7702SFG-13		1,071			1 $2.40 10 $2.40 100 $2.40 1000 $0.84 10000 $0.84	Buy Now
	DMG7702SFG-13		1,071			1 $2.00 10 $2.00 100 $0.60 1000 $0.52 10000 $0.52	Buy Now
Diodes Incorporated DMG7702SFG-7 - Tape and Reel (Alt: DMG7702SFG-7)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	DMG7702SFG-7	Tape & Reel			2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	DMG7702SFG-7			26 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

DMG7702SFG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:	Original	dmg7702sfg ds35248	PDF
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically	Original	dmg7702sfg ds35248	PDF
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically	Original	dmg7702sfg ds35248	PDF
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically	Original	dmg7702sfg powerdi3333-8 ds35248	PDF
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically	Original	dmg7702sfg powerdi3333-8 ds35248	PDF
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	2000/53/ec 2002/95/ec 2011/65/eu sor/2014-254 +12sj/t11363-2006 gl-106 ap3039am 12sn7 az1117eh-3 ap3031k zabg6001 smbj11ca ztx689 dmn33d8l ap1901 ap3502	PDF