DS35694 Search Results

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 8mΩ @ VGS = -4.5V -14A V(BR)DSS -20V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8m @ VGS = -4.5V -12A 9.8m @ VGS = -2.5V -10A 13m @ VGS = -1.8V -9.3A 17m @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features RDS ON max ID max TA = 25°C 8.6mΩ @ VGS = -4.5V -12A V(BR)DSS -20V 11mΩ @ VGS = -2.5V -10A 15mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = +25°C 8mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features • Low RDS(ON) – ensures on state losses are minimized • Small form factor thermally efficient package enables higher

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI V BR DSS -20V Features RDS(ON) max ID max TA = +25°C 8mΩ @ VGS = -4.5V -12A 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • Low RDS(ON) – ensures on state losses are minimized

PowerDI3333-8

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 9mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 12mΩ @ VGS = -2.5V -10A 16mΩ @ VGS = -1.8V -9.3A 21mΩ @ VGS = -1.5V -7.8A • • • • • Mechanical Data This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI RDS ON max ID max TA = 25°C 8mΩ @ VGS = -4.5V -12A V(BR)DSS -20V Features 9.8mΩ @ VGS = -2.5V -10A 13mΩ @ VGS = -1.8V -9.3A 17mΩ @ VGS = -1.5V -8.3A • • • • • • Mechanical Data