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DMS3012SFG Datasheets (4)

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Diodes Incorporated

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
DMS3012SFG		Diodes Incorporated	30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI	Original	PDF	190.43KB	8
DMS3012SFG		Diodes Incorporated	30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI	Original	PDF	190.43KB	8
DMS3012SFG-13		Diodes Incorporated	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 12A POWERDI	Original	PDF		8
DMS3012SFG-7		Diodes Incorporated	FETs - Single, Discrete Semiconductor Products, MOSFET N CH 30V POWERDI 3333-8	Original	PDF		8

DMS3012SFG Price and Stock

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Diodes Incorporated


Diodes Incorporated DMS3012SFG-13 Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	DMS3012SFG-13		14,306			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Diodes Incorporated DMS3012SFG-7 Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	DMS3012SFG-7		13,530			1 - 10 - 100 - 1000 - 10000 -	Get Quote

DMS3012SFG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
Contextual Info: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12A 15mΩ @ VGS = 4.5V 9.5A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically	Original	dms3012sfg ds35441	PDF
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	2000/53/ec 2002/95/ec 2011/65/eu sor/2014-254 +12sj/t11363-2006 gl-106 ap3039am 12sn7 az1117eh-3 ap3031k zabg6001 smbj11ca ztx689 dmn33d8l ap1901 ap3502	PDF