DS35248 Search Results
DS35248 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: |
Original |
DMG7702SFG DS35248 | |
|
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically |
Original |
DMG7702SFG DS35248 | |
|
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI ADVANCE INFORMATION Product Summary Features and Benefits RDS ON max ID max TA = 25°C 10mΩ @ VGS = 10V 12 A 15mΩ @ VGS = 4.5V 9.5 A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically |
Original |
DMG7702SFG DS35248 | |
|
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically |
Original |
DMG7702SFG POWERDI3333-8 DS35248 | |
|
Contextual Info: DMG7702SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) Features 12 A 10mΩ @ VGS = 10V 30V • ID TA = +25°C Package POWERDI3333-8 9.5A 15mΩ @ VGS = 4.5V DIOFET utilizes a unique patented process to monolithically |
Original |
DMG7702SFG POWERDI3333-8 DS35248 |