POWER247 Search Results

GSM900

Abstract: RMPA1852
Contextual Info: ADVANCED DATA SHEET RMPA1852 Quad-Band GSM/EDGE PA Module Features Description • ■ ■ ■ ■ ■ ■ ■ This 7 x 7mm PAM is a 50Ω, quad-band dual mode, GSM/ EDGE PA module for 2.75G radio applications. In EDGE mode, the module supports High/Low power mode feature to maximize

lcd inverter board schematic

Abstract: fan7314 schematic diagram inverter lcd monitor 27k 3kv capacitor 15p 3kv schematic diagram lcd monitor advance 17 schematic diagram inverter FAN7314 efd2124 3kv 27k lcd inverter schematic
Contextual Info: FAN7314 LCD Backlight Inverter Drive IC Features • High-efficiency single-stage power conversion Description ■ Wide input voltage range: 5V to 25.5V The FAN7314 provides all the control functions for use as a series parallel resonant converter as well as a pulse

FSB50325

Contextual Info: FSB50325S Smart Power Module SPM Features General Description • 250V 1.5A 3-phase FRFET inverter including high voltage integrated circuit (HVIC) FSB50325S is a tiny smart power module (SPM) based on FRFET technology as a compact inverter solution for small

KSR1202

Abstract: KSR2202
Contextual Info: KSR1202 KSR1202 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =10KΩ, R2=10KΩ) • Complement to KSR2202 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

KSR1204

Abstract: KSR2204
Contextual Info: KSR1204 KSR1204 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to KSR2204 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

KSR1208

Abstract: KSR2208
Contextual Info: KSR1208 KSR1208 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2208 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

KSR1111

Abstract: KSR2111 R61B
Contextual Info: KSR2111 KSR2111 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to KSR1111 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSA916

Abstract: KSC2316
Contextual Info: KSC2316 KSC2316 Audio Power Amplifier Applications • Driver Stage Amplifier • Complement to KSA916 TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

KSR1207

Abstract: KSR2207
Contextual Info: KSR1207 KSR1207 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =22KΩ, R2=47KΩ) • Complement to KSR2207 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

KSR1001

Abstract: KSR2001
Contextual Info: KSR1001 KSR1001 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to KSR2001 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: FDS6990AS Dual 30V N-Channel PowerTrench SyncFET General Description Features The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a

Contextual Info: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: FDC2512 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: KST92/93 KST92/93 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST92 : KST93 -300 -200 V V : KST92 : KST93

MUR8100

Abstract: MUR8100E RUR8100 RURP8100
Contextual Info: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

KSC1730

Contextual Info: KSC1730 KSC1730 TV VHF, UHF Tuner Oscillator • High Current Gain Bandwidth Product : fT=1100MHz • Output Capacitance : COB=1.5pF MAX. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

KSR1010

Abstract: KSR2010
Contextual Info: KSR2010 KSR2010 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to KSR1010 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R

2E12

Abstract: FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R Rad Hard in Fairchild for MOSFET
Contextual Info: FSTYC9055D, FSTYC9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
Contextual Info: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically

KSR1108

Abstract: KSR2108
Contextual Info: KSR2108 KSR2108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSC2669

Contextual Info: KSC2669 KSC2669 FM RADIO RF AMP, MIX, CONV, OSC, IF AMP • High Current Gain Bandwidth Product : fT=250MHz TYP. TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO

KSR1206

Abstract: KSR2206
Contextual Info: KSR2206 KSR2206 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to KSR1206 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit