FDN358P Search Results
FDN358P Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDN358P | Fairchild Semiconductor | Single P-Channel, Logic Level, PowerTrench MOSFET | Original | 112.29KB | 5 | ||
| FDN358P | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Original | 85.75KB | 4 | ||
| FDN358P | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| FDN358P | Fairchild Semiconductor | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Scan | 156.46KB | 4 | ||
| FDN358P_NL | Fairchild Semiconductor | Single P-Channel, Logic Level, PowerTrench MOSFET | Original | 112.29KB | 5 |
FDN358P Price and Stock
onsemi FDN358PTrans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDN358P | 22,500 | 500 |
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| FDN358P | 21,000 | 3,000 |
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FDN358P | Tape & Reel | 21,000 | 3,000 |
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FDN358P | 35,305 |
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FDN358P | 21,000 | 59 Weeks | 3,000 |
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| FDN358P | 1,360 | 59 Weeks | 1 |
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| FDN358P | Cut Strips | 15 | 59 Weeks | 1 |
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FDN358P | Tape & Reel | 1 | 100 |
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| FDN358P | Cut Tape | 1 | 1 |
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| FDN358P | Tape & Reel | 3,000 |
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| FDN358P | Cut Tape | 3,000 |
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| FDN358P | Tape & Reel | 3,000 |
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| FDN358P | Tape & Reel | 3,000 |
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Buy Now | |||||||
| FDN358P | Tape & Reel | 3,000 |
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FDN358P | Reel | 186,000 | 29 Weeks | 3,000 |
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| FDN358P | Reel | 18,000 | 29 Weeks | 3,000 |
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| FDN358P | Reel | 29 Weeks | 3,000 |
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FDN358P | 22,550 |
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FDN358P | 1,814 | 1 |
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FDN358P | 15,000 | 59 Weeks | 9,000 |
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FDN358P | 6,000 | 46 Weeks | 3,000 |
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FDN358P | 47 Weeks | 3,000 |
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FDN358P | 22,550 |
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Fairchild Semiconductor Corporation FDN358PTrans MOSFET P-CH 30V 1.5A 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDN358P | 3,186 |
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Get Quote | |||||||
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FDN358P | 2,925 |
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Get Quote | |||||||
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FDN358P | 3,739 |
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FDN358P | 60,000 |
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Fairchild Semiconductor Corporation FDN358P_NL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDN358P_NL | 55,060 |
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FDN358P Datasheets Context Search
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Contextual Info: March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very |
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Contextual Info: SEM IC ONDUCTO R tm FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features S upe rS O T -3 P -C hannel logic level enhance m en t m ode po w e r field e ffe ct tra nsistors are produced using Fairchild's proprietary, high cell density, D M O S technology. T h is very |
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FDN358
Abstract: FDN358P
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MARKING 358Contextual Info: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate |
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Contextual Info: March 1998 RAIRCHII-D M ICDNDUCTO R tm FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very |
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Abstract: FDN358
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Contextual Info: FDN358P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate |
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Abstract: SOIC-16
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Abstract: SOIC-16
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ICS9LP306
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