POWER MOSFET TRANSISTOR SOT Search Results

um6k31n

Abstract: UM6K31
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UM6K31N Preliminary Power MOSFET SILICON N-CHANNEL MOSFET TRANSISTOR „ 6 DESCRIPTION 5 4 The UTC UM6K31N is a silicon N-channel MOS Field Effect Transistor. It can be used in switching applications. „ „ 3 SOT-363 SYMBOL ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

uf640

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in

power window motor 12v

Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Contextual Info: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping

capacitor 0805 avx

Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR  1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

Power MOSFET SOT-223

Abstract: UP1868L-AB3 QW-R207-015
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ 1 FEATURES SOT-223 * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

Contextual Info: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

NXP SMD ic MARKING CODE

Contextual Info: PBSM5240PF 40 V, 2 A PNP low VCEsat BISS transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

N2NF10

Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
Contextual Info: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor

capacitor 0805 avx

Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23
Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to

UP1868

Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

j 6815 transistor

Abstract: TRANSISTOR J 6815 EQUIVALENT C 5763 transistor transistor M 9718 5609 transistor 4082 mitsubishi 9622 transistor 4303 sot89 8948 780-4 transistor
Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MOS FET Revision date:26 /Feb.’02 RD00HVS1 Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications .

TRANSISTOR b100

Abstract: diode r207 UP1868
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.

dc-ac converter royer

Abstract: 12v schematic of fluorescent lamps schematic diagram modified sine wave dc-ac inverter Royer resonant an1722 ccfl Royer converter tsm108 transformer winding formula 220v Ac to 12v Dc royer dc-ac converter royer 220v
Contextual Info: AN1722 APPLICATION NOTE Design and Realization of a CCFL Application Using TSM108, STN790A, or STS3DPFS30, and STSA1805 1. ABSTRACT This technical document shows how to use the integrated circuit TSM108, the PNP power bipolar transistor STN790A, or the P channel power MOSFET STS3DPFS30, the NPN power bipolar transistor

transistor motorola 114-8

Abstract: motorola s 114-8 smd mosfet z8 transistor smd z8 SMD MOSFET N Z4 motorola 114-8
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies

motorola sps transistor

Abstract: MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet

BUK110-50GL

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface

mosfet fq transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

C5052

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK107-50DS Logic level DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as

CRCW08052201FKEA

Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,

transistor motorola 114-8

Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all