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    UF640 Search Results

    UF640 Datasheets (4)

    Unisonic Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UF640
    Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF 140.15KB 5
    UF640L-TA3-T
    Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF 140.15KB 5
    UF640-TA3-T
    Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF 140.15KB 5
    UF640-TF3-T
    Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF 140.15KB 5
    SF Impression Pixel

    UF640 Price and Stock

    onsemi

    onsemi NUF6401MNT1G

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    EMI Filter 6-Channel with Integrated ESD Protection AEC-Q101.revD Automotive Qualified
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    UF640 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640uf640luf640gqw-r502-066 PDF

    UF640L-TA3-T

    Abstract: PN channel MOSFET 10A UF640 UF640-TA3-T UF640-TF3-T
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640o-220o-220fuf640l+4uf640l-ta3-tpn channel mosfet 10auf640-ta3-tuf640-tf3-t PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640o-252o-263o-220+3o-220fo-220f2qw-r502-066 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640v18ohmqw-r502-916 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf64018ohmqw-r502-066 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf64018ohmqw-r502-066 PDF

    uf640

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf64018ohmqw-r502-066 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640o-220o-220fuf640l+1qw-r502-066 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640uf640lqw-r502-066 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original
    uf640-p18ohmo-220qw-r502-a17 PDF

    TQ2 rohs

    Abstract: UF640 UF640L TO-220 UF640L-TA3-T UF640-TA3-T UF640-TF3-T UF640L UF640G P-n diode to 263
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original
    uf640uf640luf640gqw-r502-066+6tq2 rohsuf640l to-220uf640l-ta3-tuf640-ta3-tuf640-tf3-tp-n diode to 263 PDF

    UFS402

    Contextual Info: UF5400 THRU SEMICONDUCTOR TECHNICAL DATA FORWARDINTERNATIONAL ELECTRONICSLTD. UF5408 TECHNICAL SPEC/F/CAT/ONS OF ULTRA FAST RECTIFIER VOLTAGE R A N G E - 50 to 1000 Volts C U R R E N T - 3.0 Amperes FEATURES ‘ Low pow er loss, high e ffic ie n cy * Low leakage


    OCR Scan
    uf5400uf5408il-std-202eufs402 PDF

    ESDA6V8

    Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
    Contextual Info: W EITRON TECH NO LOG Y TVS I ESD Protection Diode PPK C Ir 8 /2 0 ms (pF) @V rwm (W) Typ (MA) 300 20 220 20 190 5.0 13.3 150 4.0 5.0 600 1.0 20 WOSTOSC 5.0 6.1 WOSTO8C 8.0 8.5 WOST12C 12.0 WOST15C 15.0 ESDA5V3 V rwm V br (V) (V) WOST04 4.0 5.0 WOSTOS 5.0


    OCR Scan
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    FEP300P

    Abstract: BYY26-1 BYY26 FES160T BYV 20f 8YV27-2DO BYy27 UF540I Gw260 FEP300
    Contextual Info: LOW TO MEDIUM CURRENT AXIAL FAST EPITAXIAL RECTIFIERS UGOU dm U0060 UG1A in U010 PACKAGE MPG06 DO-2D4AL » A VU 0M 0.6 1.0 UGNA TYPE VFklQOM VfelttM VUOOM VUOOM vfMom VWflOM vMoom VM M VhlttOM *r H RElD 0W 04AP 91001 Hn GltOM 8YV260 tin BWSE UG2A ihm UQJD


    OCR Scan
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