UF640 Search Results
UF640 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UF640 | Unisonic Technologies | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET | Original | 140.15KB | 5 | ||
| UF640L-TA3-T | Unisonic Technologies | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET | Original | 140.15KB | 5 | ||
| UF640-TA3-T | Unisonic Technologies | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET | Original | 140.15KB | 5 | ||
| UF640-TF3-T | Unisonic Technologies | 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET | Original | 140.15KB | 5 |
UF640 Price and Stock
onsemi NUF6401MNT1GEMI Filter 6-Channel with Integrated ESD Protection Consumer Grade Qualified |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NUF6401MNT1G | 6,000 |
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NUF6401MNT1G | Tape & Reel | 21 Weeks | 6,000 |
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NUF6401MNT1G | Tape & Reel | 4,925 | 100 |
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| NUF6401MNT1G | Cut Tape | 4,925 | 5 |
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| NUF6401MNT1G | Tape & Reel | 3,000 |
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NUF6401MNT1G | Bulk | 10 |
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NUF6401MNT1G | 39,395 | 1 |
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NUF6401MNT1G | 596,887 | 1 |
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NUF6401MNT1G | 1 |
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NUF6401MNT1G | 21 Weeks | 6,000 |
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NUF6401MNT1G | 17 Weeks | 3,000 |
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NUF6401MNT1G | 18 Weeks | 3,000 |
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onsemi SNUF6401MNT1GEMI Filter 6-Channel with Integrated ESD Protection AEC-Q101.revD Automotive Qualified |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SNUF6401MNT1G |
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SNUF6401MNT1G | Tape & Reel | 20 Weeks | 9,000 |
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SNUF6401MNT1G | Cut Tape | 10,204 | 5 |
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| SNUF6401MNT1G | Tape & Reel | 10,204 | 100 |
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| SNUF6401MNT1G | Tape & Reel | 3,000 |
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SNUF6401MNT1G | 68,824 | 1 |
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SNUF6401MNT1G | 1 |
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SNUF6401MNT1G | 20 Weeks | 9,000 |
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SNUF6401MNT1G | 16 Weeks | 3,000 |
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SNUF6401MNT1G | 17 Weeks | 3,000 |
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onsemi NUF6400MNTBGSpecial Function IC, C-R-C 6-Channel EMI Filter with Integrated ESD Protection, 35 MHz, DFN-12 - Tape and Reel (Alt: NUF6400MNTBG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NUF6400MNTBG | Tape & Reel | 27,000 | 13 Weeks | 3,000 |
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NUF6400MNTBG | Cut Tape | 1,024 | 1 |
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| NUF6400MNTBG | Tape & Reel | 1,024 | 100 |
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| NUF6400MNTBG | Tape & Reel | 3,000 |
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NUF6400MNTBG | 608,109 | 1 |
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NUF6400MNTBG | 1 |
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NUF6400MNTBG | 13 Weeks | 3,000 |
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NUF6400MNTBG | 13 Weeks | 3,000 |
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NUF6400MNTBG | 14 Weeks | 3,000 |
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NUF6400MNTBG | 46,036 | 1 |
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onsemi NUF6402MNT1GEMI Filter, 6-Channel, with Integrated ESD Protection Consumer Grade Qualified. - Tape and Reel (Alt: NUF6402MNT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NUF6402MNT1G | Tape & Reel | 6,000 |
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NUF6402MNT1G | 5,115 | 1 |
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NUF6402MNT1G | 177,926 | 1 |
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NUF6402MNT1G | 3,000 |
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onsemi SZNUF6401MNWT1GEMI Filter, 6-Channel, with Integrated ESD Protection AEC-Q101.revD Automotive Qualified - Wettable Flanks. - Tape and Reel (Alt: SZNUF6401MNWT1G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SZNUF6401MNWT1G | Tape & Reel | 46 Weeks | 6,000 |
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SZNUF6401MNWT1G | Tape & Reel | 3,000 |
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SZNUF6401MNWT1G | 35 Weeks | 3,000 |
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SZNUF6401MNWT1G | 11,936 |
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UF640 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf640uf640luf640gqw-r502-066 | |
UF640L-TA3-T
Abstract: PN channel MOSFET 10A UF640 UF640-TA3-T UF640-TF3-T
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Original |
uf640o-220o-220fuf640l+4 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf640o-252o-263o-220+3 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf640v18ohmqw-r502-916 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf64018ohmqw-r502-066 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf64018ohmqw-r502-066 | |
uf640Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf64018ohmqw-r502-066 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf640o-220o-220fuf640l+1 | |
|
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in |
Original |
uf640uf640lqw-r502-066 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer |
Original |
uf640-p18ohmo-220qw-r502-a17 | |
TQ2 rohs
Abstract: UF640 UF640L TO-220 UF640L-TA3-T UF640-TA3-T UF640-TF3-T UF640L UF640G P-n diode to 263
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Original |
uf640uf640luf640gqw-r502-066+6 | |
UFS402Contextual Info: UF5400 THRU SEMICONDUCTOR TECHNICAL DATA FORWARDINTERNATIONAL ELECTRONICSLTD. UF5408 TECHNICAL SPEC/F/CAT/ONS OF ULTRA FAST RECTIFIER VOLTAGE R A N G E - 50 to 1000 Volts C U R R E N T - 3.0 Amperes FEATURES ‘ Low pow er loss, high e ffic ie n cy * Low leakage |
OCR Scan |
uf5400uf5408il-std-202eufs402 | |
ESDA6V8
Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
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OCR Scan |
wost04wost05wost12ot-23+13 | |
FEP300P
Abstract: BYY26-1 BYY26 FES160T BYV 20f 8YV27-2DO BYy27 UF540I Gw260 FEP300
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OCR Scan |
u0060mpg0600-204apgi1001+15 |