POWER MOSFET, FAIRCHILD Search Results

irf52 0

Contextual Info: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()

BUZ11

Abstract: buz11 application note BUZ1 TB334 TA9771
Contextual Info: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

IRFP150N

Contextual Info: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,

a7840

Abstract: fdfs6n303
Contextual Info: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FQPF9N50CF N-Channel QFET FRFET® MOSFET 500 V, 9 A, 850 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has

Contextual Info: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially

FLMP SuperSOT-6

Abstract: FDC697P FDC697P_F077 Supersot6
Contextual Info: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V

1E14

Abstract: 2E12 3E12 FRF450R4 JANSR2N7298
Contextual Info: JANSR2N7298 Formerly FRF450R4 Data Sheet [ /Title JANS R2N72 98 /Subject (Radiation Hardened, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Radiation Hardened, NChannel Power MOSFET) /Creator () Radiation Hardened, N-Channel Power

Contextual Info: FQPF8N60CF N-Channel QFET FRFET® MOSFET 600 V, 6.26 A, 1.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has

Contextual Info: FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FQA40N25 N-Channel QFET MOSFET 250 V, 40 A, 70 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQPF5N90 N-Channel QFET MOSFET 900 V, 3 A, 2.3 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: FQD30N06 N-Channel QFET MOSFET 60 V, 22.7 A, 45 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQA27N25 N-Channel QFET MOSFET 250 V, 27 A, 110 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQB34N20L N-Channel QFET MOSFET 200 V, 31 A, 75 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management

Contextual Info: FQA65N20 N-Channel QFET MOSFET 200 V, 65 A, 32 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQD19N10L N-Channel QFET MOSFET 100 V, 15.6 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Contextual Info: FQPF5N40 N-Channel QFET MOSFET 400 V, 3.0 A, 1.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

Contextual Info: FQP4N80 N-Channel QFET MOSFET 800 V, 3.9 A, 3.6 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce

FQA24N60

Contextual Info: FQA24N60 N-Channel QFET MOSFET 600 V, 23.5 A, 240 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to