POWER JUNCTION FET Search Results

2SK1842

Contextual Info: Silicon Junction FETs Small Signal 2SK1842 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For infrared sensor 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 Drain current Gate current Power dissipation Junction temperature

LDMOS

Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Contextual Info: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior

amplitude modulation applications

Abstract: LDMOS AN1223
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

mosfet high power rf ldmos

Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Contextual Info: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain

Infrared-Sensor

Abstract: latest Infrared-Sensor 2SK2380 SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 0.80±0.05 0.28±0.05 (0.80) (0.80) Drain current Gate current Allowable power dissipation Channel temperature

pyroelectric sensor application notes

Abstract: Junction-FET pyro pyroelectric sensor 2SK2988 "Field Effect Transistor" JISC7030 SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2988 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Drain current Gate current Allowable power dissipation Channel temperature Storage temperature

P06V

Abstract: D024 KSK161
Contextual Info: KSK161 SILICON N-CHANNEL JUNCTION FET _ i- FM TUNER VHF AMPLIFIER • NF - 2.S dB TYP •|Yra|- 9.0 mS (TYP) ABSOLUTE MAXIMUM RATINGS (T.-25 °C) Characteristic Symbol Gate-Drain Voltage Gate Current Power Dissipation Junction Temperature

Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation

Contextual Info: KSK161 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER • N F =2.5dB TYP • I Y fs I «9.0 m S (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25t:) Sym bol Characteristic Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature Storage Temperature

Junction-FET

Abstract: Silicon Junction FETs p channel Junction-FET 2SK2593 SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1 2 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 1.60+0.05 – 0.03 Gate to Source voltage Drain current Gate current Allowable power dissipation

Contextual Info: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation

2SJ0163

Abstract: 2SJ163 2SK1103
Contextual Info: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation

2SK0198

Abstract: 2SK198
Contextual Info: Silicon Junction FETs Small Signal 2SK0198 (2SK198) Silicon N-channel junction FET Unit: mm For low-frequency amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VDS 30 V VDGO 30 V Drain current ID 20 mA Gate current IG 10 mA Power dissipation

KSK161

Abstract: power Junction FET
Contextual Info: KSK161 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER TO-92 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature

Junction-FET

Abstract: KSK211
Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VHF AMPLIFIER SOT-23 • NF =2.5dB TYP •YFS=9.0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Symbol VGDO IG PD TJ T STG Gate-Drain Voltage Gate-Current Power Dissipation Junction Temperature

K596 b 01

Abstract: K596
Contextual Info: K596 K596 TO-92S Si N-CHANNEL JUNCTION FET 1. SOURCE FEATURES Power dissipation PCM: 2. GATE 0.1 W Tamb=25℃ 3. DRAIN Gate Current I G: 10 mA Drain current 1 mA I D: Drain-Source voltage -20 V BVGDO: Operating and storage junction temperature range 123

Hitachi DSA002749

Contextual Info: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

0E12

Abstract: MOSFET Termination Structure
Contextual Info: Low Voltage Super Junction MOSFET Simulation and Experimentation Timothy Henson, Joe Cao International Rectifier 233 Kansas St, El Segundo, CA 90245 USA as presented at ISPSD Conference , April 2003 Abstract. The application of Super Junction concepts to a low voltage power MOSFET is

transistor equivalent table

Contextual Info: Letter Symbol and Graphical Symbol 8.1 Letter symbol Table 1 General Description Symbol Rth Rth j-c Rth j-s noise figure allowable power dissipation therm al resistance therm al resistance, junction to case therm al resistance, (junction to stud) Rth j-a

Contextual Info: KSK211 SILICON N-CHANNEL JUNCTION FET FM TUNER VH F AMPLIFIER S O T-23 . N F = 2 .5 d B T Y P • I Y fs I =9-0 ms (TYP) ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol G ate-D rain Voltage G ate-C urrent Power Dissipation Junction Tem perature

7.1 Channel audio amplifier

Abstract: amplifier audio BFT46 BF861A n channel audio BFW12 BF410C BF512 transistors BFW10
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR AMPLIFIERS OVERVIEW_PRODUCT DATA: PAGES 36-37 N/P _ leaded_