2SK2593 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO

2SK2593

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching M Di ain sc te on na tin nc ue e/ d unit: mm 0.12+0.05 – 0.02 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05 – 0.03

Contextual Info: 2SK2593 Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction Unit : mm For low-frequency amplification For switching 1.6±0.15 ● High gate-drain voltage VGDO ● Downsizing 0.4 +0.1 0.2 -0.05 0.8±0.1 1 3 0.5 noise, high gain 1.0±0.1

2SK2593J

Abstract: SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01 (0.375) 1.60±0.05 2 0.27±0.02 0 to 0.02 (0.50)(0.50) (0.80)

2SK2593

Abstract: SC-75A
Contextual Info: Panasonic S ilic o n Junction FETs S m all Sign al 2SK2593 Silicon N -C h an n el Junction Unit : mm For low-frequency amplification For switching 0 .4 0 .8 ± 0.1 0 .4 • Features • Low noise, high gain • High gate-drain voltage V g d o • Downsizing of sets by mini-type package and automatic insertion by

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF

2SK2593

Abstract: SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55

Contextual Info: Panasonic S ilic o n Junction FETs Small Signal 2SK2593 Silicon N -C hannel Junction Unit : mm For low-frequency amplification For switching • Features • Low noise, high gain • High gate-drain voltage V gdo • Downsizing of sets by mini-type package and automatic insertion by

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package ■ Features • Low noise figure NF • High gate-drain voltage (source open) VGDO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package • Low noise figure NF

2SK2593G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET For low-frequency amplification For switching circuits • Package • Low noise figure NF • High gate-drain voltage (source open) VGDO

2SK2593J

Abstract: TY5 marking
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ue pl d in an c

2SK2593J

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits • Features ■ Package • Low noise figure NF • High gate-drain voltage (source open) VGDO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET For low-frequency amplification For switching circuits 1.00±0.05 Unit: mm 0.80±0.05 1.60+0.05 –0.03 0.12+0.03 –0.01

2SK2593

Abstract: SC-89 2BR marking
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 0.80±0.05 0.28±0.05 (0.44) 3° (0.44) 1 2 1.60±0.05 (0.80) 3 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 – 0.03 1.60+0.05

2SK2593J

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593J Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Package ue pl d in an c

2SK2593G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2593G Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For low-frequency amplification For switching circuits • Features ue pl d in an c

2SK2593

Abstract: SC-75
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Parameter Unit VDSX Symbol 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55

Junction-FET

Abstract: Silicon Junction FETs p channel Junction-FET 2SK2593 SC-89
Contextual Info: Silicon Junction FETs Small Signal 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching unit: mm 1 2 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 1.60+0.05 – 0.03 Gate to Source voltage Drain current Gate current Allowable power dissipation

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

2SK3585

Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)