POWER BOND Search Results

LP3000

Abstract: MIL-HDBK-263 P100
Contextual Info: LP3000 2 W POWER PHEMT • • DRAIN BOND PAD 4X FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

LP750

Abstract: MIL-HDBK-263 P100
Contextual Info: LP750 0.5 W POWER PHEMT • • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD 2x GATE BOND PAD

pHEMT transistor 360

Abstract: FPA683
Contextual Info: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE

pHEMT transistor 360

Abstract: LP6836 MIL-HDBK-263
Contextual Info: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD

BY360

Contextual Info: LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE BOND PAD • DIE SIZE: 15.4X14.2 mils 390x360 µm

noise parameter FPD750 0.5w power phemt

Abstract: FPD750 MIL-HDBK-263 P100
Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

FPD1050

Abstract: FPD750 MIL-HDBK-263
Contextual Info: FPD1050 0.75W POWER PHEMT • • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD 2x DRAIN BOND PAD (2X) GATE

Filtronic* FPD6836

Abstract: FPD6836 MIL-HDBK-263
Contextual Info: FPD6836 0.25W POWER PHEMT • • FEATURES ♦ 25.5 dBm Linear Output Power at 12 GHz ♦ 10 dB Power Gain at 12 GHz ♦ 16.5 dB Maximum Stable Gain at 12 GHz ♦ 12 dB Maximum Stable Gain at 24 GHz ♦ 50% Power-Added Efficiency ♦ 8V Operation DRAIN BOND

FPD3000

Abstract: MIL-HDBK-263 P100 Au Sn eutectic
Contextual Info: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)

MIL-STD-1686

Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
Contextual Info: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)

FPD2250

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm

vacuum cleaner motor

Abstract: BTA412Y-800B BTA416Y-600B BTA41 electronic dimmer vacuum cleaner motor BC557 BTA312Y-600C BTA312Y-800C BTA412Y-600B BTA412Y-600C
Contextual Info: NXP internally insulated power package SOT78D Rugged performer for high power applications For high power devices requiring electrical isolation with good thermal performance, ease of handling and assembly, NXP’s SOT78D package is the perfect choice. Our optimized die-bonding

MP330

Abstract: MP312
Contextual Info: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an

AT90SC

Abstract: AT90SC9608RCT
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SC

Abstract: AT90SC4816R AT90SC4818RT ISO7816-3 GENERATOR AVR
Contextual Info: Features General • High-performance, Low-power AVR Enhanced RISC Architecture • • • • • • – 120 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SO128

Abstract: AT90SO AT90S0128 AT90S0 QFN44 EDR-7320 ISO7816 atmel package marking Fast Cycle RAM temperature controller circuit diagram microcontroller
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-Down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SO4

Abstract: atmel 518 AT90SO EDR-7320 ISO7816 atmel lot marking eeprom EWAVR
Contextual Info: Features General • • • • • • • • High-performance, Low-power secureAVRTM Enhanced RISC Architecture Low Power Idle and Power-Down Modes Bond Pad Locations Conforming to ISO 7816-2 ESD Protection up to ± 4000V Operating Range: 2.7V to 5.5V

Contextual Info: Features General • High-performance, Low-power AVR Core Enhanced RISC Architecture • • • • • • – 120 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SC

Abstract: CRC16 25672RU
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SC

Abstract: AT90SC9618RCT
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SC6436RT

Contextual Info: Features General • High-performance, Low-power AVR Enhanced RISC Architecture • • • • • • – 120 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

AT90SC

Abstract: AT90SC9618RT ATV4
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 135 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2

EMV2000

Abstract: ISO14443 SHA-256 AT90SC AT90SC256144RCFT CRC16 SHA-256 Cryptographic Accelerator
Contextual Info: Features General • High-performance, Low-power secureAVR Enhanced RISC Architecture • • • • • • – 137 Powerful Instructions Most Executed in a Single Clock Cycle Low Power Idle and Power-down Modes Bond Pad Locations Conforming to ISO 7816-2