POWER BOND Search Results

MIL-STD-1686

Abstract: AlGaAs resistivity LP1500 MIL-HDBK-263 P100
Contextual Info: LP1500 1W POWER PHEMT • • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD 2X

LP3000

Abstract: MIL-HDBK-263 P100
Contextual Info: LP3000 2 W POWER PHEMT • • DRAIN BOND PAD 4X FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compression at 3.3V ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

LP750

Abstract: MIL-HDBK-263 P100 320x430
Contextual Info: LP750 0.5 W POWER PHEMT • • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD 2x GATE BOND PAD

LP750

Abstract: MIL-HDBK-263 P100
Contextual Info: LP750 0.5 W POWER PHEMT • • FEATURES ♦ 28 dBm Output Power at 1-dB Compression at 18 GHz ♦ 10 dB Power Gain at 18 GHz ♦ 24 dBm Output Power at 1-dB Compression at 3.3V ♦ 55% Power-Added Efficiency DRAIN BOND PAD SOURCE BOND PAD 2x GATE BOND PAD

pHEMT transistor 360

Abstract: FPA683
Contextual Info: LPA6836V Preliminary Data Sheet MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE

pHEMT transistor 360

Abstract: LP6836 MIL-HDBK-263
Contextual Info: Filtronic LP6836 Medium Power PHEMT Solid State DRAIN BOND PAD FEATURES • • • • +25 dBm Typical Power at 18 GHz 9.5 dB Typical Power Gain at 18 GHz Low Intermodulation Distortion 55% Power-Added-Efficiency at 18 GHz SOURCE BOND PAD x2 GATE BOND PAD

Contextual Info: Model PWA and PWB Thin Film Wire-Bondable Power Resistors FEATURES • Small Size: 0.030 x 0.045 inches PWA 0.070 x 0.070 inches (PWB) • Excellent Power Capability: 0.5 watts (PWA) 1.0 watts (PWB) • Good Power Handling: 100% rated power to + 70 ºC derated to

Contextual Info: RESISTORS Models PWA and PWB Thin Film Wire Bondable Power Resistors FEATURES • Small Size: 0.030 x 0.045 inches PWA 0.070 x 0.070 inches (PWB) • Excellent Power Capability: 0.5 watts (PWA) 1.0 watts (PWB) • Good Power Handling: 100% rated power to + 70ºC derated to

LP6872

Abstract: MIL-HDBK-263
Contextual Info: LP6872 0.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE: 14.6X19.7 mils (370x500 µm)

BY360

Contextual Info: LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization GATE BOND PAD • DIE SIZE: 15.4X14.2 mils 390x360 µm

noise parameter FPD750 0.5w power phemt

Abstract: FPD750 MIL-HDBK-263 P100
Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

Contextual Info: FPD750 0.5W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 27 dBm Linear Output Power at 12 GHz ♦ 11.5 dB Power Gain at 12 GHz ♦ 14.5 dB Maximum Stable Gain at 12 GHz ♦ 38 dBm Output IP3 ♦ 50% Power-Added Efficiency SOURCE BOND PAD (2x) GATE

FPD1500

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

FPD1050

Abstract: FPD750 MIL-HDBK-263
Contextual Info: FPD1050 0.75W POWER PHEMT • • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD 2x DRAIN BOND PAD (2X) GATE

Curtice

Abstract: LP3000 MIL-HDBK-263 P100
Contextual Info: Filtronic LP3000/LPV3000 2W Power PHEMT Solid State DRAIN PAD x4 FEATURES • • • • • +33.5 dBm Typical Power at 18 GHz 7 dB Typical Power Gain at 18 GHz SOURCE BOND PAD (x2) +30.5 dBm at 3.3V Battery Voltage Low Intermodulation Distortion 45% Power-Added-Efficiency at 18 GHz

FPD1500

Abstract: stepper FPD1500 SOT89 MIL-HDBK-263 P100
Contextual Info: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND

FPD3000

Abstract: MIL-HDBK-263 P100 Au Sn eutectic
Contextual Info: FPD3000 2W POWER PHEMT • FEATURES ♦ 32.5 dBm Linear Output Power at 12 GHz ♦ 6.5 dB Power Gain at 12 GHz ♦ 8 dB Maximum Stable Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 30% Power-Added Efficiency DRAIN BOND PAD 4X SOURCE BOND PAD (2x) GATE BOND PAD (4X)

MIL-STD-1686

Abstract: LP6836 MIL-HDBK-263 pHEMT transistor LP6836 high power transistor s-parameters
Contextual Info: LP6836 MEDIUM POWER PHEMT • DRAIN BOND PAD FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency SOURCE BOND PAD 2x GATE BOND PAD • DIE SIZE: 14.2X13.0 mils (360x330 µm) DIE THICKNESS: 3.9 mils (100 µm)

Low Capacitance MOS FET

Abstract: Pch MOS FET HAT2068R HAT2096H Low Input Capacitance MOS FET Hitachi DSA0015 f200k
Contextual Info: New Products Hitachi Develops LFPAK Thin Power MOS FET Package Employing Bonding-Wire-Less Construction and Enabling 20% Reduction in On-Resistance < Typical Applications > • CPU power supplies in notebook PCs, etc. • Power supplies for communication devices

FPD2250

Abstract: MIL-HDBK-263 P100
Contextual Info: FPD2250 1.5W POWER PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 32 dBm Linear Output Power at 12 GHz ♦ 7.5 dB Power Gain at 12 GHz ♦ 42 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND PAD (2X) • DIE SIZE (µm): 680 x 470 DIE THICKNESS: 75 µm

vacuum cleaner motor

Abstract: BTA412Y-800B BTA416Y-600B BTA41 electronic dimmer vacuum cleaner motor BC557 BTA312Y-600C BTA312Y-800C BTA412Y-600B BTA412Y-600C
Contextual Info: NXP internally insulated power package SOT78D Rugged performer for high power applications For high power devices requiring electrical isolation with good thermal performance, ease of handling and assembly, NXP’s SOT78D package is the perfect choice. Our optimized die-bonding

MP312

Abstract: MP330 power resistor encapsulated DMO10 MIL-R-39009-1 MIL-R-39009/1 MIL-R-39009
Contextual Info: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an

MP330

Abstract: MP312
Contextual Info: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an

Contextual Info: MP312 and MP330 Power Film Resistors Chassis Mounted Precision Power Film Resistors with Center Screw Mounting Type MP Chassis Mounted Power Film Resistors are made with Micronox resistance films fired onto a ceramic substrate which is thermally bonded to an