POLYSILICON Search Results

Analog Demultiplexers

Abstract: CXA2111R CXA2112R LCX016 LCX017 precision waveform generator LCX017 sony
Contextual Info: CXA2112R LCD Driver Description The CXA2112R is a driver IC developed for use in the 6-input/12-input Sony polysilicon TFT LCD panel LCX016/017 . It has a line invert amplifier and analog de-multiplexers, timing generator and output buffers required for these. CXA2112R can directly

SL10100

Abstract: SL80
Contextual Info: O K I Semiconductor M S M 5 1 V 4 2 6 0 /S L _ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION T he M SM 51V4260/SL is a 262,144-word x 16-bit d ynam ic R A M fabricated in O K I's C M O S silicon gate technology. The M SM 51V4260/SL achieves high integration, high-speed operation, and lowpow er consum ption due to qu adruple polysilicon single m etal C M O S . The M SM 51V4260/SL is

LCX017 sony

Abstract: Analog Demultiplexers cxa2111r sony lcd CXA2112R LCX016 LCX017 LCX* sony CXA2111
Contextual Info: SONY CXA2112R LCD Driver Description The CXA2112R is a driver IC developed for use in the 6-input/12-input Sony polysilicon TFT LCD panel LCX016/017 . It has a line invert amplifier and analog de-multiplexers, timing generator and output buffers required for these. CXA2112R can directly

MSM511000

Abstract: ZIP20-P-400 dip26
Contextual Info: O K I Semiconductor MSM511000B/BL_ 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM511000B/BL achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon single metal CMOS. The MSM511000B/BL is

MSM51V16805A

Contextual Info: • O K I Semiconductor_ M SM 51V16805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FA ST P A G E M O D E T Y P E WITH ED O DESCRIPTION The MSM51V16805A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16805A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16805A is

STGP10NB37LZ

Abstract: SCHEMATIC IGNITION WITH IGBTS
Contextual Info: STGP10NB37LZ N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT • ■ ■ ■ ■ ■ TYPE VCES VCE sat IC STGP10NB37LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY

IRFS9640

Abstract: IRFS9641
Contextual Info: P-CHANNEL POWER MOSFETS IRFS9640/9641 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSS4N80

Abstract: SSS4N70 "VDSS 800V" 40A mosfet
Contextual Info: N-CHANNEL POWER MOSFETS SSS4N80/70 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFS150

Abstract: 250M IRFS151 diode deg avalanche zo 150 60
Contextual Info: N-CHANNEL POWER MOSFETS IRFS150/151 FEATURES • Low er Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFS840

Abstract: IRFS841 IRFS842 IRFS843
Contextual Info: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re

iz10

Abstract: 1z14 250M IRFIZ10 IRFIZ14 IRFWZ10 IRFWZ14 IZ14 n10ad
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ14/10 IRFIZ14/10 FEATURES D*-PAK • Lo w e r R dsio n • Improved Inductive Ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

IRFS521

Abstract: IRFS520
Contextual Info: N-CHANNEL POWER MOSFETS IRFS520/521 FEATURES • • • • • • • Lower R ds <o n Improved inductive rugged ness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSH60N10

Abstract: 21133 250M SSH60N08
Contextual Info: N-CHANNEL POWER MOSFETS SSH60N10/08 FEATURES • • • • • • • Lower R ds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

9211

Abstract: irfu9210 20A, 50V, P-Channel U9210 IRFR9210
Contextual Info: IRFR9210/9211 IRFU9210/9211 P-CHANNEL POWER MOSFETS FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lo w er input cap acitance • Extended sa fe operating area

IRFS730

Abstract: 733 mosfet 731 MOSFET IRFS731 IR 733 IRFS732 IRFS733 0D173
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7^4142 IRFS730/731/732/733 DDlTBbl 777 «SPIC K N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance

Contextual Info: microCMOS NMC6164 8192 x 8-Bit Static RAM General Description Features The NMC6164 is a 8192-word by 8-bit new generation s ta tic RAM. It is fabricated w ith N a tio n a l's proprietary m icroC M O S do uble-polysilicon tech nolog y w hich com ­ bines high pe rform ance and high de nsity w ith low power

IRFIZ44

Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IXTH50N20

Abstract: SFF50N20M SFF50N20Z
Contextual Info: PRELIMINARY SFF50N20M SFF50N20Z SOLID STATE DEVICES, INC. 14830 Valley View Av. * La Mirada, Ca 90670 Phone: 562 404-7855 * Fax: (562) 404-1773 50 AMPS 200 VOLTS 0.055 S N-CHANNEL POWER MOSFET DESIGNER'S DATA SHEET FEATURES: • Rugged construction with polysilicon gate

AEC-Q100

Abstract: BGA2002 001aam919
Contextual Info: BGA2002 MMIC amplifier Rev. 3 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a

LC15007

Abstract: SANYO TFT LV4149W ALR129FGX LV4141W sanyo lcd controller sanyo LCD camera display XENB sanyo tft screen
Contextual Info: Ordering number : ENN7661 ALR129FGX LCD Module ALR129FGX Low-Temperature Polysilicon 1.5-inch TFT LCD Module This low power consumption 1.5 inch Low-Temperature polysilicon TFT LCD module is suitable for view finder of digital still camera. Features • •

lv4135

Abstract: lv4137 sanyo tft display ALP024AGX LV4135W sanyo led display LV4137W 76655 2.8 inch video display circuits XENB
Contextual Info: Ordering number : ENN7655 ALP024AGX LCD Module ALP024AGX Low-Temperature Polysilicon 0.50-inch TFT LCD Module This low power consumption 0.50 inch Low-Temperature polysilicon TFT LCD module is suitable for view finder of digital still camera or digital video camera.

250M

Abstract: IRFS820 IRFS821
Contextual Info: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

1N45

Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50
Contextual Info: SSR1N50/45 SSU1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

SSH6N60

Abstract: 250M SSH6N55 MOSFET 600v 60a
Contextual Info: N-CHANNEL POWER MOSFETS SSH6N60/55 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability