IRFIZ44 Search Results

IRFz44n equivalent

Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Contextual Info: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

IRFIZ44

Abstract: IRFIZ40 IRFWZ40 IRFWZ44 LS50A
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ44/40 IRFIZ44/40 FEATURES • • • • • • • D!-PAK Lower R d sio n Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

FZ44N

Abstract: IRFIZ44N equivalent fz44
Contextual Info: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A

Contextual Info: PD 9.1403 International ¡^Rectifier IRFIZ44N PRELIMINARY H EXFET Power M O S F E T Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Vdss = 55 V R ü S o n = Id =

IRFIZ44N equivalent

Abstract: IRF1010 IRFI840G IRFIZ44N IRFZ44N IRFz44n equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1403 IRFIZ44N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRFIZ44N

Contextual Info: IRFIZ44N N-Channel Enhancement-Mode MOSFET VDS 55V RDS ON 20mΩ ID 49A H C t N c E u TRENFET w Prod Ne G ITO-220AB 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) G 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30)

D52A

Abstract: IRFIZ44G marking s73 PV-TJ
Contextual Info: PD-9.753 International î ü Rectifier IRFIZ44G HEXFET Power MOSFET • • • • • •• Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance

Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

SiHFIZ44G

Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

Contextual Info: PD - 94940 IRFIZ44GPbF • Lead-Free 1/13/04 Document Number: 91189 www.vishay.com 1 IRFIZ44GPbF Document Number: 91189 www.vishay.com 2 IRFIZ44GPbF Document Number: 91189 www.vishay.com 3 IRFIZ44GPbF Document Number: 91189 www.vishay.com 4 IRFIZ44GPbF Document Number: 91189

Contextual Info: IRFIZ44G_RC, SiHFIZ44G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SiHFIZ44G

Abstract: IRFIZ44G SiHFIZ44G-E3
Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

IRFIZ44G

Abstract: SiHFIZ44G SiHFIZ44G-E3
Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

B1370

Abstract: R B1370 IRFz44n equivalent MOSFET IRFZ44N for irfz44n IRF1010 MOSFET TO-220 IRFIZ44N
Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

irf1z44

Abstract: IRF1Z44G 25A SCREW MOUNTED DIODE CD 1517 IRFIZ44G l129 VDSS60
Contextual Info: PD-9.753 International S S Rectifier IRFIZ44G HEXFET P o w e r M O S F E T • • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature Dynamic dv/dt Rating Low Thermal Resistance

Contextual Info: International ioR Rectifier 4ÔS5452 0 0 1 S 3 flô PD-9.753 IRFIZ44G INTERNATIONAL R E C T I F I E R HEXFET Power MOSFET • • • • • • I NR Û1T Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm 175°C Operating Temperature

IRFIZ44

Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

SiHFIZ44G

Contextual Info: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm

MOSFET IRFZ44N

Abstract: IRFZ44N IRFZ44N MOSFET
Contextual Info: IRFIZ44NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

IRFz44n equivalent

Abstract: 12v input 55v output using irfz44n circuit IRFZ44N for irfz44n
Contextual Info: PD - 94836 IRFIZ44NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description

IRFz44n equivalent

Abstract: datasheet of irfz44n IRF1010 IRFI840G IRFIZ44N IRFZ44N
Contextual Info: PD - 9.1403B IRFIZ44N l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 94940 IRFIZ44GPbF • Lead-Free 1/13/04 Document Number: 91189 www.vishay.com 1 IRFIZ44GPbF Document Number: 91189 www.vishay.com 2 IRFIZ44GPbF Document Number: 91189 www.vishay.com 3 IRFIZ44GPbF Document Number: 91189 www.vishay.com 4 IRFIZ44GPbF Document Number: 91189

IRFz44n equivalent

Abstract: diode c341 for irfz44n IRFIZ44N equivalent IRFZ44N
Contextual Info: PD - 9.1403A International IGR Rectifier IRFIZ44N HEXFET Power M O SFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated Voss = 55V Ros on = 0.024Q

Contextual Info: PD - 9.1403B IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier