FZ44 Search Results

IRFZ44 IOR

Contextual Info: International m 46SS4SE ddis7c,q qti *inr pd-9.sioc ior Rectifier IR FZ44 i w u i i v i tMT[-R M n M 1 | RECTIFIER bSE t -HEXFET Power M O SFET • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling

FZ44N

Abstract: IRFIZ44N equivalent fz44
Contextual Info: PD - 9.1403A International IÖR Rectifier IRFIZ44N HEXFET Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS <S> Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V dss = 55 V FÍDS on = 0 .0 2 4 Í 2 lD = 3 1 A

IRFZ44

Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Contextual Info: FZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

1XYS

Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)

Contextual Info: fax id: 7026 rszgggfpr CY54/74FCT374T CY54/74FCT574T L> I 1 i l ì L O O 8-Bit Registers Features • M atched rise and fa ll tim e s • F u lly c o m p a tib le w ith TTL in p u t and o u tp u t lo g ic levels • E S D > 2000V • F u n ctio n , p in o u t, and d riv e c o m p a tib le w ith FCT and

F710S

Abstract: H5 SMD FZ24S IRF540S FZ44S F1310S fz44 irf1310
Contextual Info: International Ü lR e c tifie r HEXFET Power M OSFETs Surface Mount S M D -2 2 0 These devices provide the highest power capability and lowest possible on-resistance in a surface mount package. They can dissipate up to 2W in a typical surface mount application and are available in tape and reel.

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 FZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

1RFZ40

Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N

lt1146

Abstract: EA MOSFET 63 ng sanyo WX capacitors 4700 LT011 fz44
Contextual Info: / " T H IM f A D LTCl 148-3-3/LTC1M8-5 TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators FCRTURCS DCSCRIPTIOn • Ultra-High Efficiency: Over 95% Possible ■ Current-Mode Operation for Excellent Line and Load Transient Response ■ High Efficiency Maintained Over Three Decades of