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Rochester Electronics LLC FQU1N50TU MOSFET N-CH 500V 1.1A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU1N50TU	Tube			1,212	1 - 10 - 100 - 1000 - 10000 $0.25	Buy Now
onsemi SSU1N50BTU MOSFET N-CH 520V 1.3A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SSU1N50BTU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Silica	SSU1N50BTU			17 Weeks	5,040	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	SSU1N50BTU		9,997			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC SSU1N50BTU 1.3A, 520V, 5.3OHM, N-CHANNEL,
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SSU1N50BTU	Bulk			649	1 - 10 - 100 - 1000 $0.46 10000 $0.46	Buy Now
Fairchild Semiconductor Corporation FQU1N50TU Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FQU1N50TU		1,212		1	1 - 10 - 100 $0.21 1000 $0.18 10000 $0.16	Buy Now
Fairchild Semiconductor Corporation SSU1N50BTU Power Field-Effect Transistor, 1.3A I(D), 520V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SSU1N50BTU		55,440		1	1 - 10 - 100 $0.44 1000 $0.37 10000 $0.33	Buy Now

U1N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SSR -40 DD Abstract: power mosfet j 162 MOSFET SSR Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES BVDss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance ■ Improved Gate Charge _P ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ■ Lower RDS{oN) : 4.046 £2 (Typ.)	OCR Scan	SSR/U1N50A SSR -40 DD power mosfet j 162 MOSFET SSR	PDF
Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V	OCR Scan	SSR/U1N50A	PDF
SSR -40 DD Contextual Info: SSR/U1N50A A d va n ce d Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 500 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA M ax @ VDS= 500V	OCR Scan	SSR/U1N50A 1N50A SSR -40 DD	PDF
on 4046 Contextual Info: Advanced SSR/U1N50A P o w e r MOSFET FEATURES BV DSS = 5 0 0 V • R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n lD ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 nA (M ax.) @ V DS = 500V	OCR Scan	SSR/U1N50A on 4046	PDF
SSR -100 DD Abstract: SSR -25 DD Contextual Info: Advanced SSR/U1N50A Power MOSFET FEATURES BVDSS - 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-3 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ V DS = 500V	OCR Scan	SSR/U1N50A SSR -100 DD SSR -25 DD	PDF
Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 5.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = 500V	Original	SSR/U1N50A	PDF
1N45 Abstract: Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50 Contextual Info: SSR1N50/45 U1N50/45 N-CHANNEL POWER MOSFET FEATURE • • • • • • • D-PAK Lower R d s ON Excellent voltage stability Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	SSR1N50/45 SSU1N50/45 SSR1N50/U1N50 SSR1N45/U1N45 SSR1N50/1N45 SSU1N50/1N45 widths300, 7Tb4142 1N45 Mosfet 1N45 SSU1N50 1n45 mosfet 250M u1n50	PDF
U420B Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary	Original	Power247TM, U420B IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast	PDF