U9210 Search Results

Contextual Info: PD - 95027 IRFR9210PbF U9210PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9210PbF 2 www.irf.com IRFR/U9210PbF www.irf.com 3 IRFR/U9210PbF 4 www.irf.com IRFR/U9210PbF www.irf.com 5 IRFR/U9210PbF 6 www.irf.com IRFR/U9210PbF D-Pak TO-252AA Package Outline

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

Vishay DaTE CODE

Abstract: international rectifier code EIA-541 IRFR120 IRFU120 U120
Contextual Info: PD - 95027A IRFR9210PbF U9210PbF • Lead-Free Document Number: 91281 12/14/04 www.vishay.com 1 IRFR/U9210PbF Document Number: 91281 www.vishay.com 2 IRFR/U9210PbF Document Number: 91281 www.vishay.com 3 IRFR/U9210PbF Document Number: 91281 www.vishay.com

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 3 .0 ß ■ Lower Input Capacitance lD = -1.6 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @

fairchild 999

Abstract: 999 fairchild
Contextual Info: Advanced SFR/U9210 P o w e r MOSFET FEATURES B • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge V ^ D S o n l D ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -200V

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

U120

Abstract: IRF p-CHANNEL EIA-541 IRFR120 IRFU120 Diode P 619 P-Channel irf
Contextual Info: PD - 95027A IRFR9210PbF U9210PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U9210PbF 2 www.irf.com IRFR/U9210PbF www.irf.com 3 IRFR/U9210PbF 4 www.irf.com IRFR/U9210PbF www.irf.com 5 IRFR/U9210PbF 6 www.irf.com IRFR/U9210PbF Peak Diode Recovery dv/dt Test Circuit

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ ■ ■ Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = -200V

Contextual Info: SFR/U9210 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V

9211

Abstract: irfu9210 20A, 50V, P-Channel U9210 IRFR9210
Contextual Info: IRFR9210/9211 U9210/9211 P-CHANNEL POWER MOSFETS FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Lo w er input cap acitance • Extended sa fe operating area

macbook pro 13

Abstract: mb166 ASUS eee PC 900 dell d630 toshiba 8893 macbook AMD turion 64 X2 ASUS X50Z compaq 510 ACER Aspire JDW50
Contextual Info: Acer Acer Acer Acer Aspire 5230 JAWD0 Aspire 5410T (MS2272) Aspire 5410TZ (MS2272) Aspire 5520 series (ICW50) 13.71 7.27 7.27 10.16 1.34 1.38 1.38 1.44 Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Acer Aspire 5635 (ZR6) Aspire 5710 series (JDW50)

F 9212

Abstract: Z024 irfu9210 IRFR9212
Contextual Info: SAM SUN G E L E C T R O N I C S INC b4E D • 7^4142 IRFR9210/9212 U9210/9212 0G1 2 37 5 414 « S r i G K P-CHANNEL POWER MOSFETS FEATURES • L o w e r R ds ON • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

U420B

Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
Contextual Info: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary