pnp 222A
Abstract: MJE5850 MJE5851 MJE5852 1N4934 1N4937 MJE15028 MJE15029 mje5851 transistor Motorola AN222A
Contextual Info: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE5850 MJE5851* MJE5852 * Data Sheet SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS
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mje5850/dpnp 222amje5850mje5851+7mje58521n49341n4937mje15028mje15029mje5851 transistormotorola an222a
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2sd880 equivalent
Abstract: tip3055 equivalent BU108 mje2055 2n3055 motor control circuits 2N6576 equivalent equivalent of 2sc2071 2N6107 equivalent BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5850 MJE5851* MJE5852* Data Sheet Designer's SWITCHMODE Series PNP Silicon Power Transistors *Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS 300, 350, 400 VOLTS 80 WATTS The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They
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mje5850mje5851mje5852tip73b+16tip74tip74atip74btip75tip75atip75b2sd880 equivalenttip3055 equivalentbu108mje20552n3055 motor control circuits2n6576 equivalentequivalent of 2sc20712n6107 equivalentbu326bu100
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222A Transistor
Abstract: JE5852
Contextual Info: MOTOROLA Order this document by MJE5850/D SEMICONDUCTOR TECHNICAL DATA M JE5850 M JE5851* M JE5852* D esigner’s Data Sheet S W IT C H M O D E S e rie s PNP S ilic o n P o w e r T ra n s is to rs ‘ Motorola Preferred Device 8 AMPERE PNP SILICON POWER TRANSISTORS
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mje5850/dmje5850mje5851mje5852+421a-06o-220ab222a transistorje5852
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pnp 222A
Abstract: MJE5850 MJE5851G MJE5851 MJE5852G 1N4934 MJE15029 MJE5850G MJE5852
Contextual Info: MJE5850, MJE5851, MJE5852 MJE5851 and MJE5852 are Preferred Devices SWITCHMODEt Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits
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mje5850mje5851mje5852mje5850/d+6pnp 222amje5851gmje5852g1n4934mje15029mje5850g
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Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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mje5850mje5851mje5852mje13007g+1mje5850/d
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MJE5850
Abstract: pnp 222A mje5852 mje5851 transistor mje150 MJE5852G equivalent MJE5851
Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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mje5850mje5851mje5852mje5850/d+4pnp 222amje5851 transistormje150mje5852g equivalent
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tektronix 475
Abstract: pnp 222A 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE5851 MJE5852 tr 222a
Contextual Info: ON Semiconductort MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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mje5850mje5851mje5852r14525+8mje5850/dtektronix 475pnp 222a1n49341n4937mje15028mje15029tr 222a
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pnp 222A
Contextual Info: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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Contextual Info: MJE5850, MJE5851, MJE5852 SWITCHMODE Series PNP Silicon Power Transistors http://onsemi.com The MJE5850, MJE5851 and the MJE5852 transistors are designed for high−voltage, high−speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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pnp 222A
Abstract: MJE-5850 MJE5852 MJE5851 1N4934 1N4937 MJE15028 MJE15029 MJE5850 MJE1502
Contextual Info: ON Semiconductor MJE5850 MJE5851 * MJE5852 * SWITCHMODEt Series PNP Silicon Power Transistors The MJE5850, MJE5851 and the MJE5852 transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
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mje5850mje5851mje5852r14525+8mje5850/dpnp 222amje-58501n49341n4937mje15028mje15029mje1502
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MPS9488
Abstract: 8C208 KT3818 2SA838 8C252 LOW-POWER SILICON PNP MPS948 8C2528 BSY41 8C513
Contextual Info: RF LOW-POWER SILICON PNP Item Part Number Number V BR CEO 5 10 NA02EI NA02FI NA12EI NA22EI NA22FI NA22XI NA22YI NA02EY NA02FY NA22EY ~~~~x~ 15 20 NA22YY 8C2058 8C2088 SF213 SF313 8C2528 8C2538 8C2828 ~~~~~~ 25 30 NA02FJ NA12EJ NA22EJ NA22FJ NA22XJ NA22YJ 8C259C
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na02eina02fina12eina22ei+16na22fina22xina22yina02eyna02fyna22eymps94888c208kt38182sa8388c252low-power silicon pnpmps9488c2528bsy418c513
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2SA1005K
Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534
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mps3906ns3906ntm3906pet3906+12pxt3906tp53832sa1005kbc5122n36442n5383bc251low-power silicon pnpkt310bc204b2n6012sa1005l
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2N4872
Abstract: 2n5141 10N60N 2N3304 ESM2894 92AB LOW-POWER SILICON PNP 2SA1229 MM8T3640 MPS4258
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 ESM2894 2N5228 PN5140 2N5140 2N5141 MPS3639 2N3451 MPS4257 PN3639 2N3639 ~~:~~j~ 15 20 MM4257 MM4257 MM4257 2N3304 8SX94 2N4207 8SX35 MPSL07 ~S~~~~l 25 2SA1245 KT380V KT389V V(BR)CEO 30 35 2N5837
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esm28942n5228pn51402n5140+142n5141mps36392n3451mps4257pn36392n36392n487210n60n2n330492ablow-power silicon pnp2sa1229mm8t3640mps4258
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d33025
Abstract: 2N3392 complementary 2N3856 2n3860 transistor COMPLEMENTARY PNP-NPN TRANSISTORS 2N5355 2N6000 2N3856A 2N4424 2n2926 transistor
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cEO '~'\„^ I Voltage 50/iA to NPN 5mA to 5mA ra p to 20 to 2N6000 2N60Q2 2N6001 2N6S03 2N6000 2N6002 N PN PN P 2NB001 2N W Q 3 2N6000 2N6002 2N6001 2N6003 pnp : G ET3 0 14 GET3S3B GET36 38A GET3638
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50/ia800maget706get708+15get914get3013get3646ge1705cet708d330252n3392 complementary2n38562n3860 transistorcomplementary pnp-npn transistors2n53552n60002n3856a2n44242n2926 transistor
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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tip122 tip127 audio amp schematic
Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001 SCILLC, 2001 Previous Edition 1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.
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dl111/djuly-2001r14525tip122 tip127 audio amp schematic+9mje521 equivalentbjt small signal low power bd139mj15003 300 watts amplifier2n3773 pinouttransistor mj11032 equivalentmj11028 transistor equivalent2n3055 ic2n3773 audio amplifier diagram2n222 transistor use as audio amplifier
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TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525dl126+10transistor ah-16transistor bh-16equivalent of transistor bc212 bc 214transistor marking code sot-23 2fx2907a pnp bipolar transistorssilicon transistor fs 2025marking jv sod323bf245 replacementgi 312 diodemsd601
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525cbf493s+9bc337 hie hre hfebc449 equivalenttransistor marking code sot-23 2fxmarking 513 sod-323bc213 equivalentmecl 10000bc237c equivalentdiode marking code jv3 fbav70 sot-23 jj
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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dl126/dnov-2001r14525marking 513 sod-323+9transistor marking code sot-23 2fxbc449 equivalentdtd113bc548 hie hre hfe steel packagempsw45a replacementbc449a equivalent2n4401 free transistor equivalent bookpower tmosbf256
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2n3055 motorola
Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,
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1phx11122c2n3055 motorolatip122 tip127 audio amp schematictransistor equivalent book 2sc2238+7ir640transistor motorola 40411transistor replacement guideir431motorola an485c26882sa1046
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492
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application MJ10023
Abstract: BU108 2N6058 2n3055 motor control circuits darlington tip31 mj15004 equivalent BDX54 bd139 equivalent transistor MJ15022 equivalent 2SB56
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS The MJ10022 and MJ10023 Darlington transistors are designed for high–voltage,
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mj10022mj10023performanc32tip73b+14tip74tip74atip74btip75application mj10023bu1082n60582n3055 motor control circuitsdarlington tip31mj15004 equivalentbdx54bd139 equivalent transistormj15022 equivalent2sb56
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CASE 221A Style 1
Abstract: BU108 BD907 equivalent Darlington NPN Silicon Diode NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 2SC144 2N555 BU326 BU100 MJE520 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage,
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mj10020mj10021performa32tip73b+14tip74tip74atip74btip75case 221a style 1bu108bd907 equivalentdarlington npn silicon diodenpn power darlington transistors high voltage high icm to-2472sc1442n555bu326bu100mje520 equivalent
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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eaton cm20aa5 gne mosfethall sensor 44e 4022n8491+6ftg 1087 striac bcr 10kmfeb3tsmd transistor marking 352asharp eia 577 sharp color tv schematic diagrammp-130 m mh-ce 10268
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