PLATINUM Search Results

mbr2506

Abstract: MBR25060V
Contextual Info: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

b2545g

Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
Contextual Info: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 

B20100G

Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
Contextual Info: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

K2404

Contextual Info: H-IIF Series • Heavy metal Platinum: Pt introduced for lifetime control • Higher-speed diode built-in • High breakdown tolerance (high dv/dt) H H: High-Voltage Power MOSFET II: Series (Generation) F: FRD (Fast Recovery Diode) built-in H-IIF Series Built-in Diode trr and Breakdown Tolerance

LED collimator

Abstract: LED DRAGON X OSS-W osram golden dragon automotive
Contextual Info: LEDIL F’FORM OPTICS OSS SQUARE lenses for Osram Dragon LEDs - Specially designed for the new Osram Golden & Platinum Dragon LED packages. Works well with all colors* and also with all the old Dragon types Lens material optical grade PC with high UV and temperature resistance

Contextual Info: MBRP40045CTL POWERTAP II SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

ampal16r8l

Abstract: 16H8 AMPAL16R4L AMPAL16L8A/BSA AmPAL16L8L
Contextual Info: AmPAL16R8 Fam ily 20-Pin IMOX Programmable Array Logic PAL Elements Distinctive Characteristics • AMD's superior IMOX technology - Guarantees tpo = 15 ns Max. "B " Versions • High-Speed, Half-Power ("A L") and Quarter-Power ("Q ") versions • Platinum-silicide fuses and added test words ensure

Contextual Info: Gigohm Wraparound Surface Mount CHIP RESISTORS FEATURES • R esistan ce values to 1 x 1012£2 • 96% Alumina substrate • Wraparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder coating for superior solder attachm ent.

PLATINUM RESISTOR

Abstract: PTFN Pt 1000 IEC 751 pt sensors PTFC rtds pt 1000 temperature sensor C101B edison 501 Platinum Resistance Temperature sensor
Contextual Info: g RTDs: TYPE PT PLATINUM SENSORS FOR TEMPERATURE MEASUREMENT DESCRIPTION: APPLICATIONS: Thin film RTD sensing element on ceramic substrate • · · · · FEATURES: • Characteristics according to DIN IEC 751 • Temperature range: -50 to +600oC • Excellent long term stability

Contextual Info: Am27Sl2/13 a 2,048-Bit 512 x 4 Bipolar PROM > 3 DISTINCTIVE CHARACTERISTICS ro •«j • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs

ecl pal 16 macrocells

Abstract: HD b3c
Contextual Info: AmPAL*10H20EG8/AmPAL10020EG8 IMOX-III ECL Programmable Array Logic PRELIMINARY Asynchronous-RESET and PRESET capability Power-up RESET capability PRELOAD for improved testability Special designed-ln test features for full AC and DC testing Platinum-silicide fuses ensure high programming yield,

27s21

Abstract: AMD 27S21 AM27S21 21A1
Contextual Info: Am27S21 /27S21A AdvaMcro 1,024-Bit 256x4 Bipolar PROM Devices DISTIN CTIVE CH ARA CTERISTICS • • • • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield Low-current PNP inputs High-current open-collector and three-state outputs

Contextual Info: Gigohm Wraparound Surface Mount CHIP RESISTORS IMS FEATURES • 1,200,000,000 to 1,000,000,000,000 Q thick film chip resistors • 96% Alumina substrate • W raparound platinum silver PtAg terminations • HCC-0805-XXXX-X: PtAg term inations with 62/36/2 solder

100PT

Abstract: 120NI Wire RTD Transmitter 3 wire RTD sensor din 43760 SCT1P34-01 SCT1P34-02 SCT1P34-03 SCT1P34-04 SCT1P34-05
Contextual Info: SCT1P34 Linearized 2- or 3-Wire RTD Input Transmitters FEATURES DESCRIPTION ● INTERFACES TO 100Ω PLATINUM OR 120Ω NICKEL RTDs Each SCT1P34 RTD input transmitter provides a single channel of RTD input which is filtered, isolated, amplified, linearized, and converted to a process

Q65110A7706

Contextual Info: Platinum DRAGON Lead Pb Free Product - RoHS Compliant LCW W5SN Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 118 lm bei 700 mA und bis zu 154 lm bei 1 A (3500K)

418C

Abstract: MBRB20100CT1
Contextual Info: MOTOROLA Order this document by MBRB20100CT1/D SEMICONDUCTOR TECHNICAL DATA Product Preview SWITCHMODE Schottky Power Rectifier MBRB20100CT1 D2PAK–SL Straight–Leaded Through Hole Mount Package SCHOTTKY BARRIER RECTIFIER 20 AMPERES 100 VOLTS . . . using the Schottky Barrier principle with a platinum barrier metal. These

Contextual Info: Platinum DRAGON white with Chip Level Conversion CLC Lead (Pb) Free Product - RoHS Compliant LW W5SN Released Besondere Merkmale • Gehäusetyp: weißes SMD Gehäuse, klarer Silikon - Verguss, Chip level conversion • Typischer Lichtfluss: 75 lm bei 700 mA

b20100

Abstract: MBR20100CTP b20100p B2010 diode device data on semiconductor
Contextual Info: MBR20100CTP SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • • • • • 20 Amps Total 10 Amps per Diode Leg Guardring for Stress Protection

B2060T

Abstract: MBRB2060CT MBRB2060CTT4 SMD310
Contextual Info: MBRB2060CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package Employs the use of the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Package Designed for Power Surface Mount Applications

P0805

Abstract: RTD SENSING CIRCUIT plc P1206 IEC62 CODE Welwyn IEC62 CODE p0603 IEC62 IEC751 Platinum Resistance Temperature sensor rtd platinum 100 sensor
Contextual Info: Platinum Temperature Sensor Welwyn Components RTD Series • • • • • High stability Platinum based sensor High resolution, accuracy and interchangeability Compatible with automatic placement equipment Wide temperature range - very fast response time

B1645

Abstract: B-1645 B1635 MBR1645 B1635 transistor MBR1635 D 304 x
Contextual Info: MBR1635, MBR1645 MBR1645 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage

b2545

Abstract: MBRB2545CT MBRB2545CTT4 SMD310
Contextual Info: MBRB2545CT Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Center–Tap Configuration

MBR4045PT

Abstract: B4045 800TC Diode MBR4045PT
Contextual Info: MBR4045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MBRP20030CTL

Abstract: b2003
Contextual Info: MOTOROLA Order this document by MBRP20030CTL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRP20030CTL POWERTAP II SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following