PLANAR Search Results

C 34 F

Abstract: 1SV274 D234
Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV274 C A T V T U N IN G . • • • • High Capacitance Ratio : C2V / C25V = 12.5 Typ. Low Series Resistance : rs = 0.6f2 (Typ.) Excellent C-V Characteristics, and Small Tracking Error. Small Package

SM16D14

Abstract: TOSHIBA THYRISTOR
Contextual Info: SM16 D,G 14 BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE AC P OWER C O N T R O L A P P LICATIONS. Unit in mm 3 á hr (ZiatxOMAX. FEATURES: . R e p e t i t i v e P e a k O f f - S t a t e V o l t a g e : V[)RM= 2 0 0 — 400V . R .M.S O n - S t a t e C u r rent

2SC2640

Abstract: pj 71
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2640 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : Output Power : Po=28W Min, ( f=175MHz, VCC=12.5V, Pi=4W ) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=14.5V, Pj=4W, f=175MHz

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

1s1555 diode

Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Contextual Info: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

2SC31

Abstract: m15t
Contextual Info: 2SC31 22 SILICQN NPN EPITAXIAL PLANAR TYPE t r a n s is t o r T V V H F RF A M P LIF IE R A PP LIC A T IO N S . FEATURES : • High Gain : Gpe = 24dB Typ. (f=200M Hz) • Low Noise : NF = 2.0dB (Typ.) (f=200MHz) • Excellent Forward AGC Characteristics.

M16GZ47

Abstract: m16jz47 M16GZ47A SM16J 2428M SM16Z47A SM16JZ47A 16GZ47 16JZ47
Contextual Info: TOSHIBA SM16 GJ Z47 SM16(GJ)Z47A Triac U n it in m m Silicon Planar Type A C Power Control Applications F e a tu re s • Repetitive Peak Off-State Voltage - VDRM = 400, 600V • R.M.S, O n-State Current ‘ ^T(RMS) = 1 6 A • High Com m utating (dv/dt) • Isolation Voltage

sf3d42c

Abstract: SF3G42C
Contextual Info: THYRISTOR SILICON PLANAR TYPE SF3 D,G 42C LOW POWER CONTROL APPLICATIONS. Unit in mm 1 0.0 1 0.5 Repetitive Peak Off-State Voltage: Vr)RM=200~400V DRM“ Repetitive Peak Reverse Voltage ^RRM =10V r (S3.2±0.1 •ix" • Plastic Mold Package • Peak On-State Voltage

Contextual Info: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A

2SC1955

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1955 Unit in mm VHF BAND POWER AMPLIFIER APPLICATIONS. 0S59MAX. g ja 4 5 M A X . FEATURES : Output Power : f=175MHz, Po=2.8W (Min. Vcc=13.5V, Pi=0.15W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR |-|^ 0 Q Q 0 p U n it in mm T V TU N E R , UHF O S C ILLATO R A P P LIC A T IO N . TV TU N E R , UHF CONVERTER A P P LIC A T IO N . • • Including Two Devices in SM6 Super M ini Type with 6Leads H igh T ransition Frequency : f'i' = 4.0GHz (Typ.)

LG tv tuner unit

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R J TV TUNER, VHF OSCILLATOR APPLICATIONS. *j U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz

M16JZ47

Abstract: M16GZ47 m16gz SM16J M16JZ47A
Contextual Info: I TRIAC SM16 G,J Z47 SM16(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. Unit in mm . Repetitive Peak Off-State Voltage VuRif=400, 600V . R.M.S On-State Current It (RMS)=16A 0 3.2 ± 0 .2 1 0 .3 MAX . High Commutating (dv/dt) VlSOL=1500V AC . Isolation Voltage

M6JZ47

Abstract: M6GZ47 U5100 *M6JZ47 M6JZ u160d A0-125
Contextual Info: TRIAC SM6 G,J Z47 SM6(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage Vdrm*A00, 600V . R.M.S On-State Current I t Unit in mm 10.3 MAX (R M S)“ 6A & 32 ±0.2 . High Commutating (dv/dt) . Isolation Voltage v ISOL=1500V

Contextual Info: TOSHIBA 1SV230 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV230 Unit in mm CATV CONVERTER 1st OSC TUNING. • High Capacitance Ratio : C2V ! C20V = 8 Typ. • Low Series Resistance : rs = 0.730 (Typ.) • Useful for Small Size Tuner.

1SV261

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV261 UHF SHF TUNING • H igh C apacitance R atio : C 2 V /C 2 5 V = 5.7 Typ. • Low Series R esistance : r s = 1.20 (Typ.) • E xcellent C-V C h aracteristics, an d Sm all T rack in g E rror.

F0R5

Abstract: SF0R5G43
Contextual Info: T O SH IB A SF0R5G43,SF0R5J43 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF0R5G43, SF0R5J43 Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage : VdkM \ Repetitive Peak Reverse Voltage : V rrm j Average On-State Current : It AV = 500mA

Contextual Info: TOSHIBA HN2C11FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N 2 C 1 1 FU VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm 2.1 + 0.1 • Including Two Devices in U S6 Ultra Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

2sc1764

Contextual Info: 2SC1764 SILICON NPN EPITAXIAL PLANAR TYPE 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm FEATURES : . Specified 28V, 28MHz Characteristics : Output Power : Po=80Wpjjp : Minimum Gain : Gpe=14.5dB : Efficiency : ’i'c=40%(Min.)

Contextual Info: 2SC3607 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. 3.6 MAX . • Low Noise Figure, High Gain N F = l.ld B , |S2leP = 9-5dB f= 1.7 MAX. jg L MAXIMUM RATINGS (Ta = 25°C CHARACTERISTIC Collector-Base Voltage