PHOTOTRANSISTOR L14 Search Results

L14N2

Abstract: 1N6265 L14N1
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14N1 L14N2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1

L14C2

Abstract: L14C1
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14C1 L14C2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.96) 0.178 (4.52) 0.030 (0.76) MAX 0.210 (5.34) MAX 0.500 (12.7) MIN 0.100 (2.54) SCHEMATIC 0.050 (1.27) 0.100 (2.54) DIA. (CONNECTED TO CASE) COLLECTOR 3 2 1

OF LED 55B

Abstract: Phototransistor L14G3 application L14G1 l14g1 equivalent L14G2 L14G3 L14G3 phototransistor Phototransistor L14G3 L14G2 application note L14G3 equivalent
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14G1 L14G2 L14G3 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3

Contextual Info: GaAs INFRARED EMITTING DIODE ÜPMUCTRSRiCS F5F1 The F5F1 is a 940nm LED encapsulated in a clear, wide angle, stdeiooker package. SECTION X~X LEAD PROFILÉ * Good optical to mechanical alignment • Mechanically and wavelength matched to the L14Q series phototransistor

Contextual Info: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021

L14P1

Abstract: L14P2 1N6265
Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR L14P1 L14P2 PACKAGE DIMENSIONS 0.230 5.84 0.209 (5.31) 0.195 (4.95) 0.178 (4.52) 0.255 (6.47) 0.225 (5.71) 0.030 (0.76) NOM 0.500 (12.7) MIN 0.100 (2.54) 0.050 (1.27) SCHEMATIC 2 1 (CONNECTED TO CASE) COLLECTOR 3 3 0.038 (0.97)

L14Q1 equivalent

Abstract: L14Q1 ST1335
Contextual Info: PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 DESCRIPTION PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. —-D — * ï — I-1 E f - 1— . r« L -. . ‘— pH— “1b|t L

Contextual Info: HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14N1/2 INCHES SYMBOL MILLIMETERS MIN. MAX. .016 .021 .406 .534 <f>D .209 .230 5.30 5.85 40, e .178 .195 4.52 4.96 A ei h MIN. • Narrow reception angle. 5,34 210 .100 NOM ■ H erm etically sealed package.

Contextual Info: [sul PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14Q1 PACKAGE DIMENSIONS The L14Q1 is a silicon phototransister encapsulated is a clear, wide angle, sidelooker package. — D— * 1' Red Ef 4 Color • — T - H 1 i f 11 b J 3 . k SECTION X-X LEAD PROFILE

L14G1

Abstract: l14g1 equivalent infrared led L14G2 circuit design L14G2 application note 1N6266 Phototransistor L14G2 fairchild make INFRARED EMITTING DIODE TO18 L14G1 phototransistor
Contextual Info: 1N6266 GaAs INFRARED EMITTING DIODE FEATURES PACKAGE DIMENSIONS • Good optical to mechanical alignment 0.209 5.31 • Mechanically and wavelength matched to the 0.184 (4.67) TO-18 series phototransistor 0.030 (0.76) NOM • Hermetically sealed package

L14LOI

Abstract: l14lti QSC11X H23LOI QSD12X QSD72X H23LOB
Contextual Info: MATCHED EMITTER/PHOTOSENSOR PAIRS Phototransistor/LED Pairs QPA1223 L14PX 96 F5DX (95) 20 mA/5V/.250” 7.5 - mA QPC1213 QSC11X (93) QEC12X (91) 20 mA/5V/.250” 5.0 - mA 30 QPD1223 QSD12X (93) QED12X (91) 20 mA/5V/.250” 10.0 - mA 30 QPD5223 QSD72X (93)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR Phototransistor L14F1 Phototransistor L14G3 phototransistor 650 nm l14g1 equivalent Phototransistor L14G2 L14G3 phototransistor datasheet L14G3 phototransistor L14G1 phototransistor
Contextual Info: Optoelectronics Hermetic Silicon Photosensors Part Number IC ON (mA) Test Conditions VCE (V) Ee (mW/cm2) λp (nm) min max BVCEO (V) max ICEO @ 10 V VCE (nA) max Sensor Type TO-18 Detector Package (Convex Lens) BPW36 5 0.5 940 GaAs 1.00 – 30 100 Phototransistor

H23LOI

Abstract: H23LOB L14LOI
Contextual Info: EO OPTOELECTRONICS MATCHED EMITTER/PHOTOSENSOR PAIRS Sensor LED Test F a m ily F am ily C o n d itio n s p a g e # I p a g e #) Part Num ber B V ceo (V ) 'C(ON) i f/ v c e / d m in m ax un its m in Phototransistor/LED Pairs QPA1223 L14PX (96) F5DX (95)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

Phototransistor L14G3 application

Abstract: L14F1 npn photo transistor L14G2 application note L14F1 phototransistor 2N5777 circuit using l14f1 H11A520 340 opto isolator L14F1 photo transistor 2n5777
Contextual Info: OPTOELECTRONICS GE TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 MIN. PO@ lp=100mA 5.4mW 3.5mW 1.5mW 5.4mW 3.5 mW 1.5mW INFRARED EMITTERS FALL MAX. PEAK EMISSION RISE TIME Vp @ WAVELENGTH TIME lp= 100mA TYP. n. METERS TYP. n. SEC. TYP. n. SEC.

Contextual Info: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING

ST1035

Contextual Info: [*Q GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS DESCRIPTION The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. — D— 1 E f H—1 r\ » ^ Code T SECTION X-X LEAD PROFILE 1 _ L If FEATURES 1 1 _ i Good optical to mechanical alignment

L14F1 npn photo transistor

Abstract: 4n26 opto isolator 4n27 opto isolator L14F1 phototransistor 4N25-4N26-4N27 4N25-4N26-4N27-4N28 2N5777 2N5780 transistor 531 ge 4n25
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

T2D DIODE

Abstract: T2D 83 diode T2D DIODE 69 T2D 83 T2D 17 DIODE diode T2D T2D DIODE 60 T2D 51 DIODE T2D DIODE 94 T2D 94
Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS F5F1 PACKAGE DIMENSIONS ES^#RIPTI The F5F1 is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. i t Black Color Code E T T~ II SECTION X-X LEAD PROFILE FEA TU RES G ood optical to m echanical alignm ent

Contextual Info: [ * 9 GaAs INFRARED EMITTING DIODE ipmutïiftiits 1N6266 The 1N6266 is a 940nm LED in a narrow angle, T M6 package. SEATIN G • Good optical io mechanical alignment SYMBOL A •8>b D Ü0D. a e, h .1 . k i. u JNCHES Ml» MAX. -255 .016 ,203 tao .021

L14F1 phototransistor

Abstract: L14F1 npn photo transistor T1 L14F1 TRANSISTOR 2n5777 phototransistor 340 opto isolator LED55B 2N5777 A3-H11 2N5778 L14G3
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

2n5777 phototransistor

Abstract: L14F1 PHOTOTRANSISTOR 2n5779 Phototransistor L14F1 L14F1 npn photo transistor LED55B photo transistor L14F1 L14G3 phototransistor npn photo transistor H11A2
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS G E TYPE PAGE NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E M AX. MIN. M AX. P E A K E M IS S IO N W AVELENGTH T IM E T IM E Vp @ Pd PO@ lp=100m A lp= 100mA TYP. n. M E T E R S TYP. n. SEC. TYP. n. SEC. mW

L14F1 PHOTOTRANSISTOR

Abstract: 2n5777 phototransistor Phototransistor L14F1 H11A1-H11A2 4n26 opto isolator l14f1 L14F1 npn photo transistor L14H2 H11A2 H15A1
Contextual Info: OPTOELECTRONICS INFRARED EMITTERS GE TYPE PAG E NO. LED55C LED55B LED56 LED55CF LED55BF LED56F 134] 1341 1341 1341 1341 1341 FALL R IS E MAX. M IN . M A X . P E A K E M IS S IO N W AVELENG TH T IM E T IM E Vp @ Pd PO@ lp = 1 0 0 m A lp = 100m A TYP. n. M E T E R S TYP. n. SEC. TY P. n. SEC . mW