PHILIPS DLM Search Results

M140 Blue Laser Diode

Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Contextual Info: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts

MSB002

Abstract: PH* SOT223 transistor NPN planar RF transistor NPN RF Amplifier BFG741 philips MATV amplifiers
Contextual Info: Objective specification Philips Semiconductors ^ 3 3 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE T> BFG741 7110flSb 004S3S7 bTl «PHIN PINNING PIN DESCRIPTION • Low distortion • Gold metallization ensures excellent reliability 2 base

Contextual Info: bbSHTBl 0D32423 625 Philips Semiconductors APX Preliminary specification CATV amplifier module BGY787 N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity • Extremely low noise input • Silicon nitride passivation 2 common • Rugged construction

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

Contextual Info: Microcontroller Applications ABSTRACT This technical note gives a software example of how to effectively use the transmit FIFO of UART1 same for UART0 of the Philips Semiconductors LPC2000 family. Disclaimer Described applications are for illustrative purposes only. Philips Semiconductors makes

Transistor TT 2246

Contextual Info: • I L,Lj53c131 0024fi3fc. TT3 Philips Semiconductors APX ^ J^roduc^pecificatjon N AHER PHILIPS/DISCRETE PNP 4 GHz wideband transistor FEATURES BFG55 PINNING • High output voltage capability PIN DESCRIPTION • High gain bandwidth product 1 • Good thermal stability

Contextual Info: LbSBTBl QQE5Q33 TIM Mi A P X Product specification N AMER PHILIPS/DISCRETE b7E » NPN 9 GHz wideband transistor BFG541 Philips Semiconductors FEATURES PINNING • High power gain PIN • Low noise figure 1 emitter DESCRIPTION • High transition frequency

BFQ32S

Abstract: BFR96S GHz PNP transistor SAA 1020 Philips DLM
Contextual Info: Philips Sem iconductors Product specification PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION ^ SbE D BFQ32S m 711002b 0G4S433 DMT • PHIN PINNING PNP transistor in a plastic SOT37 envelope. It is intended for use in UHF applications such as broadcast

Contextual Info: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features

Contextual Info: • Philips Semiconductors bb53T31 0055155 757 H A P X N AUER PHILIPS/DISCRETE NPN 5 GHz wideband transistor DESCRIPTION Product specification b7E J> c BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use In RP wideband amplifiers and

SC16IS7x0

Abstract: SC16IS750 application SC16IS750 source code SC16IS750 SC16IS750 application IRDA SC16IS750 IRDA communication SC16IS752 SPI SC16IS750 code RS485 SC16IS750 code sc16is750 application design
Contextual Info: AN10462 SPI programming for Philips Bridge ICs Rev. 01 — 1 June 2006 Application note Document information Info Content Keywords P89LPC935 to SC16IS750, SPI to UART, SPI programming, microcontroller, embedded processor Abstract The programming of Philips Bridge ICs such as SC16IS750 through

Contextual Info: • Philips Semiconductors bbSBTBl Q G 3 S M n 3T4 AP X Product specification CATV amplifier module BGY687B N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT11SC PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

bfr91a

Contextual Info: Philips Semiconductors b b S B ^ l 0031AEO AS2 H A P X Product specification BFR91A NPN 6 GHz wideband transistor N AUER PHILIPS/DISCRETE FEATURES b'lE ]> PINNING PIN • Low noise • Low intermodulation distortion • High power gain • Gold metallization.

power triac circuit handbook

Contextual Info: Philips Semiconductors Thyristors and Triacs Introduction PHILIPS THYRISTORS AND TRIACS The Phase 2 Process The basic principle of using a PNPN structure to produce a thyristor, and a NPNPN structure with two PNPN’s in antiparallel to produce a triac has been known for

BFW92

Abstract: philips bfw92 vk200 philips vk200.10 g04b030
Contextual Info: Philips Semiconductors Product specification 7 NPN 1 GHz wideband transistor PHILIPS BFW92 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power gain and good intermodulation properties. It is primarily intended for

2322-712

Abstract: BFG134 LC 3524 philips resistor 2322 763 2222 372 TAG 453 665 800 2222 379 2322 712 fr 253/30 r h a 431 transistor
Contextual Info: Product specification Philips Semiconductors T ^ 3 3 -a s NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION BFG134 VllOBSb □04S20l4 4ôb M P H I N 5bE D PINNING NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

Contextual Info: bbSBTBl D032375 2M2 • APX Philips Semiconductors P ro d u c ts p e c ific a ^ CATV amplifier module ■— BGY87B — N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING-SOT115C DESCRIPTION PIN • Excellent linearity • Extremely low noise 1 input

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

on 5295 transistor

Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
Contextual Info: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain

MB87S

Contextual Info: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.

BFG134

Abstract: BJE 247
Contextual Info: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.