transistor BD 339
Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Contextual Info: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
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00e374sbsd212bsd215bsd213+6bsd214bb53031transistor bd 339transistor bd 341bb530-20/transistor bd 341
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j310 replacement
Abstract: BSD211 BFW12 BFW10 BSV79 bf245a-c BF246C 2N4092 2n4393 replacement bfw11
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION
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2n40912n40922n40932n4391+152n43922n43932n44162n4416a2n48562n4857j310 replacementbsd211bfw12bfw10bsv79bf245a-cbf246c2n4393 replacementbfw11
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BSV81
Abstract: j310 replacement bfw11 j310 equivalent BSD211 BSV80 BSD215 BFW10 bfw10 transistor J310
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Replacement list REPLACED/WITHDRAWN TYPES The following type numbers were included in the previous issue of this data handbook, but are not in the current edition. TYPE NUMBER REASON FOR DELETION
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2n40912n40922n40932n4391+162n43922n43932n44162n4416a2n48562n4857bsv81j310 replacementbfw11j310 equivalentbsd211bsv80bsd215bfw10bfw10 transistorj310
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BF247A
Abstract: bs250 bs170 PMBFJ111 PMBFJ174 BSR56 BFT46 PHC21025 BF909WR
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC07 1994 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 150 BS170 347 150
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bs170bs208bf904bf904r+14bf904wrbs250bc264dbf908bsd12bf245abf247abs250 bs170pmbfj111pmbfj174bsr56bft46phc21025bf909wr
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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philips bsd215
Abstract: BST110 BF909WR
Contextual Info: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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bc264abc264bbc264cbc264d+9bf245abst120bst122php112php125phc2102501philips bsd215bst110bf909wr
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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rd91ebq2n4401d1n3940q2n2907a+7d1n1190q2sc1815q2n3055q2n1132d1n750d02cz10d1n751
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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bsd214
Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
Contextual Info: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high
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titis3t3100e374sbsd212bsd215+7bsd213bsd214philips bsd215kt 117diode t7el7e transistoriec134
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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ST72A
Abstract: ST76A ST70A st74a SN 0727 TO 92 BS170 Field Effect Transistors 2N7000 TO-92 n-channel fet to-92 BST100
Contextual Info: Small Signal Leaded Devices Field Effect Transistors D -M O S FET Pkg Type ft yfs typ (mA/V) VGS (th) (V) *on max (ns) toff max (ns) 500 120 500 50 50 50 50 50 175 175 250 250 300 300 300 300 250 250 500 300 250 300 750 300 210 150 2.5 15 2.5 15 25 25 25
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2n7000bs107bs170bsd212+14bsd213sd214bsd215o-92varst72ast76ast70ast74asn 0727to 92 bs170field effect transistors2n7000 to-92n-channel fet to-92bst100
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BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey
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bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8
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