PD25 Search Results

d2508

Abstract: D2504 transistor d2504 D2503 PC2503 PC2504 PC2508 PD2503 PD2504 PD2508
Contextual Info: DIODE MODULE 250A/300 to 800V PC2503,PC2504,PC2508 PD2503,PD2504,PD2508 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PC PD * Rectified For General Use

PD25F-40

Abstract: PD25F-80 PD25F PD25F-120 PD25F-160 PE25F PE25F-160 PE25F-40 PE25F-80 pd25f120
Contextual Info: - 308 - IM U PD 25F, + • ««H PE25F H t t* « s s m ä t / i - » (AC2500V o 25A, 400V —1600V E Œ ! ia * s » i ■ « S lÛ U f t f c * k h PD25F -40 PE25F -40 id Vdrm /riAVi /t(RMS Itsm Iz-t di/dt Pgm PC(AV) VcRM If,FM Tj Tut PD 40F, PD25F -120 PE25F 120

LT 7220

Abstract: Neltron 2211S B2B-PH-K-S C9303 CviLux USB-B-S-S-B-TH B5B-PH-K-S 2211S-06G CVILUX dc power connector HDJD-S722-QR999
Contextual Info: PD25012L / PD25012H Evaluation Board - User Guide urce Control Drawing PD25012L / PD25012H Evaluation Board User Guide Preliminary Version Revision 0.2 Catalog Number 06-0035-056 Copyright  2007 Rev. 0.2, 2007-08-23 Microsemi Analog Mixed Signal Group 1 Hanagar st., P.O/ Box 7220 Hod Hasharon 45421, Israel Tel: +972-9-7755100 Fax: +972-9-7755111

PC2501

Contextual Info: DIODE 250A Avg 1200~1600 Volts •回路図 CIRCUIT PC25012 PC25016 PD25012 PD25016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

JESD22-C101A

Abstract: PD25025F rf transistor 2.5GHz RF MOSFET CLASS AB
Contextual Info: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station

Contextual Info: J r . General 2^- Semiconductor Industries, Inc. T ransZ o r b T V S C H IP S PD25S Series DESCRIPTION This TransZorb® TVS chip series is designed for hybrid, smart card and connector applications. High current handling capabilities and fast response time makes these

530G

Contextual Info: DIODE 250A Avg 300~800 Volts •回路図 CIRCUIT PC2503 PC2504 PC2508 PD2503 PD2504 PD2508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

Contextual Info: epitex Opto-Device & Custom LED PIN-PD CHIP PD2501 PRELIMINARY Specification of Photodiode PD2501 [PIN-PD] 1 Commodity Type and Physical Characteristics. 1. Structure : Planer type PIN Photodiode 2. Electrode Top Side Anode side : Aluminum Alloy Bottom Side Cathode side: Au Alloy

PD2508

Abstract: PC2503 PC2504 PC2508 A390A PD2503 PD2504 530G
Contextual Info: DIODE 250A Avg 300~800 Volts •回路図 CIRCUIT PC2503 PC2504 PC2508 PD2503 PD2504 PD2508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

JESD22-C101A

Abstract: PD25025F RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A
Contextual Info: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station

PD25016

Abstract: PC2501 PC25012 PC25016 PD25012 530G
Contextual Info: DIODE MODULE 250A/1200,1600V PC25012, PC25016 PD25012, PD25016 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diodes Cathode Commn and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PC PD * Rectified For General Use

Contextual Info: •回路図 PC25016 PD25016 250Ａ Ａvg 1600 Ｖolts ＤＩＯＤＥ CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 非くり返しピーク逆電圧

PC25012

Abstract: PC25016 PD25012 PD25016
Contextual Info: DIODE 250A Avg 1200~1600 Volts •回路図 CIRCUIT PC25012 PC25016 PD25012 PD25016 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） PC 1 4 2 3 PD 1 2 3 4 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧

Contextual Info: •回路図 PC2508 PD2508 250Ａ Ａvg 800 Ｖolts ＤＩＯＤＥ CIRCUIT ■外形寸法図 OUTLINE DRAWING Dimension:［mm］ ■最大定格 Ｍaximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage 非くり返しピーク逆電圧

Contextual Info: PD25S24 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage24 I(PPM) Max.(A)Pk.Pulse Current V(C) Nom. (V) Clamping Voltage40

Contextual Info: PD128M6408 XXX D2J, PD256M6416(XXX)D2J SDRAM DDR2 MODULE 128M, 256MX64 UDIMM Features: • · · · · · · · · · · · · ROHS Complaint 240 pin unbuffered dual in-line memory module (UDIMM) Fast data transfer rates PC2-4200, PC2-5300 Utilizes DDR2-533 and DDR2-667 SDRAM FBGA

m1 250c fuse

Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
Contextual Info: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation

ARM926T

Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Contextual Info: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

atmel 324

Abstract: ARM926EJ-S AT91SAM ISO7816 SAM9G45 AT91SAM9G45B-CU UHP4 ddr2 16bit NAND Flash controller ecc DFSDM
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDRAM/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDRAM/LPSDR, Static

RGB888-to-YUV444

Abstract: gmZan1 C3020-DSR-01C gmzrx1 GM3020-H YUV444 schematic diagram dvi to composite 3020h EB422 Genesis Microchip osd
Contextual Info: DATA SHEET gm3020-NH/gm3020-H Sections in this document and all other related documentation that mention HDCP refer only to the gm3020-H HDCP-enabled chip. All other sections apply to both the gm3020-H chip and the gm3020-HN (non-HDCP) chip. C3020-DAT-01F

BUK542

Abstract: BUK542-100A BUK542-100B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711QSSb ODbmfll Tbfl ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level GENERAL DESCRIPTION PINNING -SO T186 PIN SYMBOL

IL 741

Abstract: philips lps 100 BUK441 BUK441-100A BUK441-100B P101
Contextual Info: PHILIPS INTERNATIONAL L.5E D H 711Dfl5t> 0QL.3T-H 741 • PHIN Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use In

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

IC ax 2008 circuit diagram

Abstract: PD25B pd25a
Contextual Info: PD-25 25W Dual Output Switching Power Supply series Features : Universal AC input / Full range Low leakage current<0.5mA Protections: Short circuit / Overload / Over voltage / Over temperature Cooling by free air convection 100% full load burn-in test Fixed switching frequency at 100KHz