130UM Search Results

OPB0604

Abstract: 839 transistor
Contextual Info: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

Contextual Info: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode

OPB1104

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm

Crystal 32 MHz 12 pF

Contextual Info: PL610-6x 1.8V to 3.3V XO IC’s for 312.5kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency.  Direct oscillation operation  Input Frequency: Fundamental crystal: o 10MHz to 60MHz  Output Frequency: LVCMOS

marking xt 12

Abstract: MTC1
Contextual Info: 1.8V to 3.3V XO IC’s for 156.25kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency.  Direct oscillation operation  Input Frequency: Fundamental crystal: o 5MHz to 60MHz  Output Frequency: LVCMOS o 156.25kHz to 60MHz 2.5V & 3.3V

Contextual Info: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter

880nm

Contextual Info: ED-216IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : •N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 385 370 n-Electrode n-AlGaAs epi layer 385 n-Electrode 130 255 p-AlGaAs epi layer Emission area p-Electrode

Contextual Info: NJU6221 Series PRELIMINARY 1.8V Operating Voltage Fundamental Quartz Crystal Oscillator IC with Input Tolerant Function !GENERAL DESCRIPTION The NJU6221 series is a C-MOS quartz crystal oscillator IC realized excellent frequency stability for fundamental up to

OPA8535HN

Contextual Info: OPA8535HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol

OPA8732HP

Contextual Info: OPA8732HP F Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage

OPA6611

Contextual Info: OPA6611 Red LED Chip N Side-Up GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit

OPA9447

Contextual Info: Infrared LED Chip OPA9447 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage

OPA9448

Abstract: 110MIL
Contextual Info: Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage

OPA8512HP

Contextual Info: OPA8512HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage

OPA9433LT

Contextual Info: Infrared LED Chip OPA9433LT GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min VF(1) Forward Voltage VF(2) Reverse Voltage

OPA9437EU

Abstract: Au Sn eutectic
Contextual Info: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF

OPA9443

Contextual Info: Infrared LED Chip OPA9443 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max Unit

48MLP

Abstract: 48-LQFP-0707 H bridge driver sg FAN8702 FAN8702B FAN8702MP FAN8702MPX mobile phone camera 2 channel h-bridge motor driver "DC Drive" motor control IRIS
Contextual Info: www.fairchildsemi.com FAN8702/FAN8702B/FAN8702MP 6 Channel DSC Motor Driver Features Description • • • • • • • • • • The FAN8702 is designed for portable equipment such as DSC and mobile phone camera. It consists of 2 constant current and 4 constant voltage drive blocks suitable for shutter, auto-focus, iris and zoom motor drive.

Contextual Info: Infrared LED Chip OPA9433 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage

5053

Contextual Info: 5053 series Crystal Oscillator Module ICs OVERVIEW The 5053 series are miniature crystal oscillator module ICs supported 80MHz to 170MHz fundamental oscillation mode. The Oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with

Contextual Info: Infrared LED Chip OPA9425AL GaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Aluminum Alloy (N Type) (P/N Type) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF VR Reverse Voltage

Contextual Info: Infrared LED Chip OPA9428M GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage

Contextual Info: OPA8930HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol