PA19 Search Results

SAM7-H64

Abstract: PA26 PA13 PA27 PA10 PA11 PA12 PA15 PA16 pa-10
Contextual Info: SAM7-H64 BOARD HEADER ASSIGNMENTS PA1 PA3 PA5 PA7 PA9 PA11 PA13 PA15 PA17 PA19 EXT1 1 3 2 5 4 7 6 9 8 11 10 13 12 15 14 17 16 19 18 PA0 PA2 PA4 PA6 PA8 PA10 PA12 PA14 PA16 PA18 GND 5V-USB AD5 ADREF PA30 PA29 PA26 PA24 PA22 PA20 EXT2 38 36 34 32 30 28 26 24

Qbh-133

Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
Contextual Info: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717

PA1911

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven

Contextual Info: p »1*1 i' i-¥*! -JJ M '^ PAI9 • PA19A ''J lia N ^ APEX M IC R O T E C H N O L O G Y C O R P O R A TIO N « TU C S O N , AR IZ O N A » A P P L IC A T IO N S H O TLIN E 8 0 0 4 2 1 - 1 8 6 5 FEATURES • • • • • VERY FAST SLEW RATE — 900 V/jas

Contextual Info: r T 'l PAI9 • PA19A A P E X M IC R O T E C H N O L O G Y C O R P O R A T IO N • A P P L IC A T IO N S H O T L IN E 8 0 0 5 4 6 -A P E X 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • VERY FAST SLEW RATE — 900 V/ns POWER MOS TECHNOLOGY — 4A peak rating

APEX pa19

Contextual Info: VIDEO POWER OPERATIONAL AMPLIFIERS PA19 • PA19A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • VERY FAST SLEW RATE — 900 V/µs • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 2V at 2A

AS23190

Abstract: MS90387-3 MS90387 gs4mt PA19577A01 remplacement TTLK3 ASE blade AS231
Contextual Info: PA19577A01 Rev. 03 4­2010 GS4MT OPERATING INSTRUCTIONS CABLE TIE INSTALLATION TOOL Part No.: GS4MT Panduit Corp. 2010 Mil. Std. MS90387-3 GS4MT TENSION HVY STD 1-4 MADE IN USA E 1 1 2 3 4 5 6 7 8 B TOOL MAINTENANCE: GS4MT This tool requires no special operator maintenance.

SC-95

Abstract: transistor NEC 2500
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1919 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION • 2.5 V drive available • Low on-state resistance RDS(on)1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A)

PA1902

Abstract: SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1902 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1902 is a switching device, which can be driven • 4.5 V drive available • Low on-state resistance RDS(on)1 = 17 mΩ TYP. (VGS = 10 V, ID = 3.5 A)

marking tl

Abstract: SC-95 PA1916
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION • 1.8 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 49 mΩ MAX. (VGS = –3.0 V, ID = –2.5 A)

PA1913

Abstract: UPA1913TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance

D13806

Abstract: UPA1912TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1952 is a switching device which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent

D1380

Abstract: PA1900
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5 V power source.

Contextual Info: BT2MS75 PA19622A01 Rev. 01 9-2003 STAINLESS STEEL STRAPPING INSTALLATION TOOL OPERATING INSTRUCTIONS Panduit Corp. 2003 FIGURE #1 1. Apply metal strap around item to be banded. Insert the tail end of the strap through the buckle loop and snug tight by hand. Hint:

Contextual Info: \ VIDEO POWER OPERATIO NAL A M PLIFIERS n p e v PA19 • PA19A M I C H T E C H M L O U h t t p ://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • VERY FAST SLEW RATE — 900 V/ps • POWER MOS TECHNOLOGY — 4A peak rating • LOW INTERNAL LOSSES — 2V at 2A

Contextual Info: POLISHING PUCK FIBER LC LC Polishing Puck Cat No: PA1926-1 UPC No: 769328113044 Description • • • Manufactured from aluminum with tungsten coating Cleaner than conventional plastic pucks because less debris left behind Double the lifetime of conventional plastic pucks

SC-95

Abstract: N transistor NEC K 2500
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1919 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING <R> • 2.5 V drive available • Low on-state resistance RDS on 1 = 58 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) RDS(on)2 = 60 mΩ MAX. (VGS = −4.0 V, ID = −3.0 A)

PA1901

Abstract: SC-95
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1901 N チャネル MOS FET スイッチング用 µ PA1901 は，2.5 V 電源系による直接駆動が可能なス ★ 外形図（単位：mm） イッチング素子です。

uPA1916TE

Abstract: SC-95
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1916 P チャネル パワーMOS FET スイッチング用 外形図（単位: mm） µPA1916 は，1.8 V 電源系による直接駆動が可能なスイッチング素子

PA1910

Abstract: PA1910TE SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1910 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1910 is a switching device which can be driven 0.65–0.15 0.32 +0.1 –0.05 +0.1 The µPA1910 features a low on-state resistance and excellent

marking TQ

Abstract: PA1901 SC-95
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1901 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION • 2.5 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A)

SC-95

Abstract: marking TS pa1918
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 FEATURES PACKAGE DRAWING Unit: mm 2.8 ±0.2 The µPA1918 is a switching device, which can be driven

D1380

Abstract: PA1912 SC-95 UPA1912TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent