PA181 Search Results

Qbh-133

Abstract: QBH-104 PA381 QBH198 qbh-109 amplifonix PA710 qbh-110 QBH109 PA630
Contextual Info: PHOENIX-M/A-COM Amplifier Direct Replacement List PHOENIX- AMPLIFONIX M/A-COM MODEL# MODEL# PA002 PA005 PA010 PAO15 PA030 PA050 PA055 PA056 PAIO PA100 PAI 10 PAI 12 PA 120 PA 150 PA 162 PA 170 PA 180 PA181 PA 190 PA191 PA211 PA219 TM7302 TM6505 TM6511 TM9717

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

upa1817

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1817 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µPA1817 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µ PA1819 is a switching device that can be driven directly by a 4.0 V power source. This device features a low on-state resistance and

D1380

Abstract: Nec 658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and

d1296

Abstract: PA1812 a5269
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and

PA1812

Abstract: uPA1812 UPA1812GR-9JG N354
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The PA1812 features a low on-state resistance and excellent

PA1810

Abstract: 4360M
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1810 is a switching device which can be driven directly by a 2.5 V power source. The µPA1810 features a low on-state resistance and

PA1815

Abstract: UPA1815GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and

PA1816

Abstract: g1625
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and

d1296

Abstract: PA1812
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and

IF33

Contextual Info: ~PHO£m< PA181 Series 10-1000 MHz. Cascadable Amplifier M/C/?OmMECap. Typical Performance Curves - -55°C +25°C - A - +85° C See Short Form Chart and Mechanical Section for available outline drawings. Features: typical values • ■ ■ ■ Wide Bandw idth. 10-1000 MHz.

g1625

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1818 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and

PA1816

Abstract: g1625
Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1816 P チャネル MOS FET スイッチング用 µPA1816 は，1.8 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。

upa1817

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1817 P チャネル MOS FET スイッチング用 µPA1817 は，2.5 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。

D1182

Abstract: PA1811
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1811 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1811 is a switching device which can be driven directly by a 2.5-V power source. The µPA1811 features a low on-state resistance and

D1380

Abstract: PA1815 UPA1815GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and

UPA1815GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5 V power source. The µPA1815 features a low on-state resistance and

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1819 P チャネル MOS FET スイッチング用 外形図（単位: mm） µ PA1819 は，4.0 V 電源系による直接駆動が可能なスイッチ ング素子です。

PA1819

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PACKARD 58 JC3

Abstract: PACKARD 58 vch 6A14VT JC201 14VT packard 56 SERIES current rating
Contextual Info: V-Series Switch Product Highlights: Maximum sealing protection with dual seals around lamps and rocker stem certified to IP66 & IP68. Optional panel seals for additional protection. ŠŠ Silver plated butt contact mechanism provides 50 to 100 thousand electrical cycles and a variety of different

PA1813

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid