PA GV Search Results

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SB737

Abstract: 2SB694H 2SB709 2SB718 2SB747 2sb707 2SD601 2SD756 2SD756A 2SB698
Contextual Info: - 58 - n Ta=25*C,*EP(iTc=25t5 2SB694H B Ä L F PA/PStf VcBO VcEO (V) (V) Ice D C) (A) Pe Pe* (W) m ^ fó 4# te (Ta=25°C) (max) ( u Pí) VcB (V) (min) (max) Vc e (V) Ic /I e (A) -0.05 LF PA/LS PSW -0.5 -1.5 LF PA/LS PSW -0.5 -1.5 -0.5 2SB703A LF PA/LS PSW

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

SOD323 Package footprint

Abstract: GVD91300 SOD323 parasitic
Contextual Info: Preliminary Data - January 1999 GVD91300 Series MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

silicon epitaxial mesa diode

Contextual Info: Preliminary Data - January 1999 GVD92100 Series MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • • • Reverse breakdown voltage (at 10 pA DC) at 25°C: 22 V min Maximum reverse leakage current (at -20 V) at 25°C: 0.05 pA DC

GVD90007-011

Abstract: GVD90007 GVD90005-011
Contextual Info: Preliminary Data - January 1999 GVD90000 Series SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package SMLP FEATURES SPECIFICATIONS • • . • Reverse breakdown voltage (at 10 pA DC) at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25"C: 0.05 pA D<

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD20430 SERIES SPRAGUE-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC

Contextual Info: Preliminary Data - January 1999 GVD1200 SERIES SPRAGIIE-GOODMAN ELECTRONICS, INC. HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 30 V min Maximum reverse leakage current (at -25 V) at 25°C: 0.05 pA DC

CR SOT23

Abstract: GVD20430
Contextual Info: Preliminary Data - January 1999 GVD20430 SERIES SPRA6UE-G00DHUUI ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTO R DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA Di

Contextual Info: Preliminary Data - January 1999 GVD20440, GVD20450 SERIES SPRAGUi-GOODIHAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25*C: 0.05 pA DC

SST12CP11

Contextual Info: 2.4 GHz High-Power and High-Gain Power Amplifier SST12CP11 Data Sheet SST12CP11 is a high-power and high-gain power amplifier PA based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the

F22C

Contextual Info: Features 3.0V to 5.5V Operating Range Advanced Low-voltage Electrically-Erasable Programmable Logic Device User-controlled Power Down Pin Option Pin-controlled Standby Power 10 pA Typical Well-suited for Battery Powered Systems 10 ns Maximum Propagation Delay

5393

Abstract: CG 09G TA75393 TA75393F TA75393P TA75393P equivalent dip-8p
Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

metronidazole

Abstract: Tryptone, yeast extract, sodium chloride METABO IC 741 to wadsworth vagina agar 24646
Contextual Info: Corporate Headquarters 400 Valley Road Warrington, PA 18976 1-800-523-2575 FAX 1-800-343-3291 Email: info@polysciences.com www.polysciences.com Europe - Germany Polysciences Europe GmbH Handelsstr. 3 D-69214 Eppelheim, Germany 49 6221-765767 FAX (49) 6221-764620

TA75393

Abstract: TA75393P TA75393F TA75393FB TA75393PA TA75393S 5393p
Contextual Info: TO SH IBA T A7 5393 P/PA/S/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single

am 16L8 pld

Contextual Info: Features * Industry Standard Architecture - Emulates Many 20-pin PALs - Low-cost Easy-to-use Software Tools * High-speed Electrically-erasable Programmable Logic Devices - 5 ns Maximum Pin-to-pin Delay * Low-power -100 pA Pin-controlled Power-down Mode Option

G16V8A

Abstract: 0425E 16v8 PLD
Contextual Info: Features Industry Standard Architecture - Emulates Many 20-Pin PALs - Low Cost Easy-to-Use Software Tools High-Speed Electrically-Erasable Programmable Logic Devices - 5 ns Maximum Pin-to-Pin Delay Low Power -10 0 pA Pin-Controlled Power Down Mode Option

D01608C-472ML

Abstract: SC250
Contextual Info: SC250 Step-Down DC-DC Converter with Bias LDO for RF Power Amplifiers POWER MANAGEMENT Description Features ‹ Adjustable output voltage range — 0.3 to 3.6V ‹ Linearly proportional VDAC to VOUT relationship for increased PA efficiency ‹ Pass-through mode automatic and on demand

MB86296S

Contextual Info: MB86296S <CORAL PA> PCI Graphics Controller Specification Revision 1.0 28 Febrary, 2005 Copyright FUJITSU LIMITED 2003-2004 ALL RIGHTS RESERVED <Notes> The specifications in this manual are subject to change without notice. Contact our Sales Department before purchasing the product described in this manual.

5393

Contextual Info: TOSHIBA TA7 5393 P/PA/S/F/FB TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75393P, TA75393PA, TA75393S, TA75393F, TA75393FB DUAL COMPARATOR This device consist of two independent voltage comparators that designed to operate from a single power supply over a wide range of voltage.

Contextual Info: TOSHIBA TMP47C423ADF CMOS 4-Bit Microcontroller The 47C423A is a high speed and high performance 4-bit sin­ gle chip microcomputer based on the TLCS-47 CMOS series with LCD driver, High Speed Event Counter and Pulse output circuit. TMP47C423ADF Pa rt N o .

TA75358F

Abstract: TA75358P TA75339F TA75339FB TA75358FB TA75358PA dip-8p SOP8-P-225-1
Contextual Info: TO SHIBA TA7 5358P/PA/F/F B TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA75358P, TA75358PA, TA75358F, TA75358FB DUAL OPERATIONAL AMPLIFIER FEATURES • In the linear mode the input common mode voltage range includes ground. • Two internally compensated OP amps are in single

Contextual Info: DATA SHEET SKY77340 PA Module for Quad-Band GSM / EDGE Applications Description • Quad-band cellular handsets: The SKY77340 Power Amplifier Module PAM is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800, PCS1900, supporting GMSK and linear EDGE