P1DB 37DBM Search Results

5.5 GHz power amplifier

Abstract: SNA-486 sna4
Contextual Info: SNA-486 DC-8 GHz Cascadable GaAs MMIC Amplifier August, 1995 Features - Cascadable 50-0hm Gain Block - 13dB Gain, +19dBm P1dB - High Linearity, +37dBm - 1.5:1 Input and Output VSWR - Operates from Single Supply 86 Plastic Package 0.51 {0.030} — - 1 V Description

VP610

Abstract: TGA4502-EPU
Contextual Info: Advance Product Information June 18th, 2002 17 - 27 GHz High Power Amplifier TGA4502-EPU Key Features • • • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Return Loss Bias 7V @ 750 mA

TA081-083-30-37

Contextual Info: TA081-083-30-37 REV1_20040412 8.1 – 8.3 GHz 37dBm Power Amplifier FEATURES • P1dB: 37 dBm • Noise Figure: 5 dB • Small Signal Gain: 30 dB • Bias Condition: 3.7A @ 12 V ELECTRICAL SPECIFICATIONS SYMBOL DESCRIPTION MIN Frequency Range 8.1 SSG Small Signal Gain @ 25°C

CGB8002-SC

Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T
Contextual Info: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz

FLM0910-25F

Abstract: 103-61 s-parameter s11 s12 s21 10000 ED-4701 9.5-10.5GHz
Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

9.5-10.5GHz

Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

"p1db 37dbm"

Abstract: TGA1172
Contextual Info: Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA

ED-4701

Abstract: FLM0910-25F
Contextual Info: FLM0910-25F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

FMM5826X

Abstract: Ka-band ED-4701
Contextual Info: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications

Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

Contextual Info: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ Output Power>0.5W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF 1 NC

FLM1414-12F

Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

920mhz

Contextual Info: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features „ Output Power>0.5W P1dB „ High Linearity „ High Power-Added Efficiency „ Thermally-Enhanced Packaging „ VREF 1 NC

FLM1414-12F

Abstract: 3600mA
Contextual Info: FLM1414-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed

FLM5053-25F

Contextual Info: FLM5053-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: TGA2586-FL 7.9 – 8.4 GHz 50W GaN Power Amplifier Applications • Satellite Communications Product Features         Functional Block Diagram Frequency Range: 7.9 – 8.4 GHz PSAT: 47 dBm CW P1dB: 43 dBm PAE: 36% Small Signal Gain: 14 dB

FP101

Abstract: High Dynamic Range FET
Contextual Info: The Communications Edge TM FP101 Preliminary Product Information High Dynamic Range FET The Communications Ed Product Features • • • • • • • 50 – 3000 MHz 37 dBm Output IP3 2.0 dB Noise Figure 13.5 dB Gain 26 dBm P1dB MTTF >100 Years SOT 89 Package

Contextual Info: The Communications Edge TM FP101 Preliminary Product Information High Dynamic Range FET The Communications Ed Product Features • • • • • • • 50 – 3000 MHz 37 dBm Output IP3 2.0 dB Noise Figure 13.5 dB Gain 26 dBm P1dB MTTF >100 Years SOT 89 Package

B1001

Abstract: XB1001 XP1000 XU1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

XB1001

Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1000

Abstract: Mimix xb1000
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

B1000

Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
Contextual Info: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing

Contextual Info: 37 dBm IP3, 1.5 dB NF, Linear Amplifier, 23 dBm P1dB, 50 MHz to 1,000 MHz, 15 dB Gain, SMA TECHNICAL DATA SHEET PE15A9001 The PE15A9001 is a High OIP3 Amplifier operating in the 50 MHz to 1000 MHz Frequency Range. The coaxial amplifier is unconditionally stable and can operate from 5 VDC to 12 VDC. The amplifier has OIP3 of 37 dBm typical and has a Gain of

Contextual Info: E-pHEMT AE616 Product Features Application • 500 ~ 4000MHz • GaAs E-pHEMT • 37dBm Output IP3 • 20dB Gain at 900MHz • 24dBm P1 dB • Single +5V Supply • Pb Free / RoHS Standard • Cellular, PCS, W-CDMA Systems • High Linearity Drive Amplifier