P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Search Results

Contextual Info: National Semiconductor" June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDH8502P

Contextual Info: N September 1996 PRELIMINARY NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

NDT2955

Contextual Info: September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

NDT2955

Contextual Info: N September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N NDC7003P
Contextual Info: March 1996 NDC7003P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: National Semiconductor" A p ril 1995 NDS9435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS9407

Abstract: diode se-1.5
Contextual Info: National Semiconductor" May 1996 NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

TRANSISTOR 2SC 950

Abstract: NDT454P c25f
Contextual Info: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDH8504P

Contextual Info: N February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDS336P

Contextual Info: N August 1996 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density,

Contextual Info: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

NDS8435A

Abstract: 79A8
Contextual Info: N December 1996 PRELIMINARY NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDH8504P

Contextual Info: N August 1996 ADVANCE INFORMATION NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDH8304P

Contextual Info: N August 1996 ADVANCE INFORMATION NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDH8302P

Abstract: Note140
Contextual Info: N May 1996 ADVANCE INFORMATION NDH8302P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology.

NDS8934

Contextual Info: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

NDH8502P

Abstract: field effect transistors
Contextual Info: N May 1996 ADVANCE INFORMATION NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

FDC634P

Abstract: SOIC-16
Contextual Info: November 1997 FDC634P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDS8934

Abstract: siemens 1120
Contextual Info: March 1996 NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

FDR856P

Abstract: SOIC-16 PF740
Contextual Info: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

NDS9953A

Contextual Info: February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

9435a

Abstract: FDS9435A SOIC-16
Contextual Info: May 1999 FDS9435A Single P-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density