OVERLAY Search Results

MBRA340T3G

Abstract: DIODE marking code A34
Contextual Info: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

Contextual Info: MURS320T3, MURS340T3, MURS360T3 Preferred Devices Surface Mount Ultrafast Power Rectifiers . . . employing state-of-the-art epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection

STY140NS10

Abstract: Max247TM MAX247
Contextual Info: STY140NS10 N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 • ■ ■ VDSS RDS on ID 100V <0.011Ω 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™

IRF634

Abstract: IRF634FP
Contextual Info: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3

M259

Abstract: M-259 AM1214-250 XAM1214-250
Contextual Info: AM1214-250 RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS TARGET DATA • REFRACTORY /GOLD METALLIZATION • EMITTER SITE BALLASTING • LOW RF THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METAL/CERAMIC HERMETIC PACKAGE • POUT = 300 W MIN. WITH 8.0 dB GAIN

AM80912-005

Abstract: capacitor feed-through SGS-THOMSON RF POWER
Contextual Info: AM80912-005 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN

STB40NS15

Contextual Info: STB40NS15 N-CHANNEL 150V - 0.042Ω - 40A D2PAK MESH OVERLAY MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STB40NS15 150 V <0.052Ω 40A TYPICAL RDS(on) = 0.042Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STB16NS25

Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™

IRF630M

Abstract: IRF630MFP
Contextual Info: IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE • ■ ■ ■ VDSS RDS on ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

MK1573-02

Contextual Info: ICROCLOCK GenClock MK1573-02 HSYNC to Video Clock Description Features The MK1573 GenClock™ provides genlock timing for video overlay systems. The device accepts the horizontal sync HSYNC signal as the input reference clock, and generates a frequencylocked high speed output. Stored in the device are

ushio

Abstract: Lithography Ushio Taiwan LS365 Ushio America 5440
Contextual Info: 【UX4-3Di Product Data Sheet】 Comparison between lithography methods available for HVM of 3D LSIs UX4-3Di FFPL 200 Specifications Resolution: Wavelength: Overlay Accuracy: Throughput: Wafer Size: Wafer Transfer Method: 3 µm L/S 365 nm Top ±1 µm, bottom ±1 µm

Rayex elec

Abstract: rayex E126167 2PDT RS-12L RS-12L Rayex elec 2PDT switch RS-12L rayex l
Contextual Info: RS SERIES RAYEX ELEC. FEATURES 2 Form C 2PDT gold overlay silver-palladium cross-bar contacts High Sensitive type (L - label) For high density PC Board mounting Using at telecommunication, domestic appliances, office machine, audio equipment, remote control, etc

SST49LF020A

Contextual Info: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks

P130NS04ZB

Abstract: B130NS04ZB JESD97 STB130NS04ZB STB130NS04ZB-1 STB130NS04ZBT4 STP130NS04ZB STW130NS04ZB MOSFET IGSS 100uA STW13
Contextual Info: STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 mΩ - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS on ID STP130NS04ZB clamped <9 mΩ 80A STB130NS04ZB clamped <9 mΩ 80A

SR506

Abstract: SR502 SR504 SR505
Contextual Info: Bk MOSPEC SR502 thru SR506 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrie metal. These state-of-the-art geometry features epitaxia construction with oxide passivation and metal overlay contac

SM18

Abstract: sm17 SM19
Contextual Info: ßk MOSPEC SM17 thru SM19 Suface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

S10C100

Abstract: S10C70 S10C80 S10C90
Contextual Info: Ek MOSPEC S10C70 thru S10C100 Schottky Barrier Rectifiers S C H O T T K Y B A R R IE R R E C T IF IE R S Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

SD5000

Abstract: M122 S10A015
Contextual Info: SD5000 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS . . . . PRELIMINARY DATA GOLD METALLIZATION EMITTER SITE BALLASTING INTERNAL INPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC PACKAGE COMMON EMITTER CONFIGURATION POUT = 1.5 W MIN. WITH 9.5 dB GAIN

IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Contextual Info: IRF640 IRF640FP  N - CHANNEL 200V - 0.150Ω - 18A - TO-220/FP MESH OVERLAY MOSFET TYPE IRF640 IRF640F P • ■ ■ ■ V DSS R DS on ID 200 V 200 V < 0.18 Ω < 0.18 Ω 18 A 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES

AM83135-030

Contextual Info: AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN

50w transistor

Abstract: AM80814-025
Contextual Info: AM80814-025 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN

S16A

Abstract: S16A30 S16A60 S16A3
Contextual Info: MOSPEC S16A30 thru S16A60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high