STB16NS25 Search Results
STB16NS25 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STB16NS25 | STMicroelectronics | N-Channel 250 V - 0.23 ohm - 16 A D2PAK MESH Overlay MOSFET | Original | 465.21KB | 9 | ||
| STB16NS25 | STMicroelectronics | N-CHANNEL 250V 0.23 ? 16A D2PAK MESH OVERLAY MOSFET | Original | 90.13KB | 8 | ||
| STB16NS25T4 | STMicroelectronics | N-Channel 250 V - 0.23 ohm - 16 A D2PAK MESH Overlay MOSFET | Original | 465.21KB | 9 |
STB16NS25 Price and Stock
STMicroelectronics STB16NS25T4250 V-16 A-0.23 OHM D2PAK MESH OVERLAY N-CHANNEL MOSFET Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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STB16NS25T4 | 515 |
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Get Quote | |||||||
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STB16NS25T4 | 10,720 |
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Get Quote | |||||||
STB16NS25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
STB16NS25Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ |
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stb16ns25 | |
STB16NS25Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET • ■ ■ TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 DESCRIPTION Using the latest high voltage MESH OVERLAY |
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stb16ns25 | |
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Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY |
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stb16ns25 | |
STB16NS25Contextual Info: STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY MOSFET TYPE VDSS RDS on ID STB16NS25 250 V < 0.28 Ω 16 A • ■ ■ TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ |
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stb16ns25 | |
stu9nc80zi
Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
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stt2pf60lstt3pf30lstt3pf20lstt4nf30l+16 | |
fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
STF12PF06
Abstract: STP9NK70Z stp9nk60zfp STW9NK90Z STripFET STP14NF12 stw12nk80z STW10NK80Z STS8C5H30L stw9nk70z
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ste70nm50sty60nm50max247stw45nm50fd+14 | |
fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14 |