OR256 Search Results

EDI8F8512C45M6C

Contextual Info: ^EDI _ EDI8F8512C ELECTRONIC DESIGNS INC. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub­

ed18f8512

Abstract: EDI8F8512C45M6C EDI8F8512C EDI8F8512LP 256Kx4 SRAM SX-SS ED18F8512C
Contextual Info: ^ED I EDI8F8512C ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub­

Contextual Info: W D EDI8F8512C I ELECTRONIC DESIGNS INC. Commercial Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs 512Kx8 bit CMOS Static Random Access Memory

EDI8F8512LP85B6C

Contextual Info: ^EDI EDI8F8512C ELECTRONIC DESIGNS INC. High Speed Four Megabit SRAM Module 512Kx8 Static RAM Features CMOS, Module The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or256Kx4 high speed Static RAMs mounted on a multi-layered epoxy laminate (FR4) sub­

29LV400TC

Contextual Info: FLASH MEMORY CMOS 4M 512K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

29LV400BC

Abstract: BC702
Contextual Info: FLASH MEMORY CMOS 4 M 512 K x 8/256K x 16 BIT MBM29LV400TC-70-90-12/MBM29LV400BC-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

Contextual Info: S . CYM1641 ~"lA ^ ^ S S S S E jS t , ^ " SEMICONDUCTOR . 256K x 16 Static RAM Module Features Functional Description • High-density 4-megabit SRAM module • High-speed CMOS SRAMs — Access time of 25 ns The CYM1641 is a high-performance 4-megabit static RAM module organized

Contextual Info: M29F100T M29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: Voice Recording/Playback LSI LR3990 • LR3990 Voice Recording/Playback LSI Pin Connections Description The LR3990 is a CMOS LSI for voice recording/ playback, based on the variable length code ADPCM Adaptive Differential Pulse Code Modulation sys­ tem. This LSI can form a voice recording/playback

Contextual Info: Integrated Integrated DeviceTechnology DeviceTechnology Tsi721 PCIe2 to S-RIO2 Protocol Conversion Bridge POWER MANAGEMENT | ANALOG & RF | INTERFACE & CONNECTIVITY | CLOCKS & TIMING | MEMORY & LOGIC | TOUCH & USER INTERFACE | VIDEO & DISPLAY | AUDIO FEATURES

Contextual Info: 2 Megabit CMOS SRAM D E N S E - P A C M ICRO SYSTEM S DPS128X16n3 DESCRIPTION: The DPS 128X16n3 SRAM '"STACK'7modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Lead less Chip Carriers SLCC . Available in straight leaded, "j" leaded

CD40102B

Abstract: CD401036
Contextual Info: ^ Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor S C H S 095 CMOS 8-Stage Presettable Synchronous Down Counters High-Voltage Types 20-Volt Rating CD40102B - 2-Decade BCD Type CD40103B — 8-Bit Binary Type • CD40102B. and CD401Q3B con

thermik sensor

Abstract: a17s JC814 MS-1036 C94S TFK U108 aks ti 79 JC878 TFK 148 RB551
Contextual Info: A » 1 0 3 6 V e r : 0 A ÙÙ B 3 3 3 /4 0 0 AMÒ K8 Socket 754 Clock Generator 6ÙÙR3 8MX32bit*8PCS 1 5 -1 6 H T D Ù R S O Ù IM M *2 \7 P C IE NEW CARO PCI-E/USB PCI-E 26 North Bridge A JIR X 480 LAN ET13Î0 p c ie 30 9~11 OZ7ÎÎMP CARÙBUS CARÙREAÙER

Contextual Info: M29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical

dd5aa

Contextual Info: microele ctronics group Data Sheet January 1998 Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 (im/0.3 p.m CMOS technology, with a migration

TCL COLOUR TV SCHEMATIC DIAGRAM

Abstract: xnxx BMS150 st1450 STI3500 STI3500 preliminary STI3520 4511 gm 71S1237 DD41
Contextual Info: "* J i, r Z 7 S G S - T H O M S O N M MSi sMM0(3i> STÌ3520 MPEG AUDIO / MPEG-2 VIDEO INTEGRATED DECODER PRELIMINARY DATA The STi3520 requires minimal support from an external microcontroller, which is mainly required to initialise the video decoder at the start of every

MB506 ULTRA HIGH FREQUENCY PRESCALER

Abstract: prescaler fujitsu mb506 MB506 2.4ghz synthesizer MB506 prescaler divide by 100 prescaler mb87006 PLL 2400 MHZ
Contextual Info: sept. 1995 ^¡tion cP rU IIIb U r i i f in r c i i " DATASHEET- MB506 ULTRA HIGH FREQUENCY PRESCALER ULTRA HIGH FREQUENCY PRESCALER The Fujitsu MB506 is a high frequency, up to 2.4GHz, prescaler used with a

Contextual Info: ^EDI EDI8M1665C Electronic Designs Inc. High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module The EDI8M1665C is a 1024K-bit high speed CMOS Static RAM Module consisting of four 4 64Kx4 Static RAMs in leadless chip carriers surface-mounted onto

Contextual Info: M29F200T M29F200B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 2 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME

Contextual Info: SGS-THOMSON M 29F400T M 29F400B raD»H[Lll e'inM l)i!lD(ei 4 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

Contextual Info: LH534P00A FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) • Access time: 120 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 |iW (MAX.) • Static operation • TTL compatible I/O

Contextual Info: LH534600B FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration CMOS 4M (512K x 8/256K x 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP T O P VIEW

12-Bit Parallel-IN Serial-OUT Shift Register

Abstract: M51660L M52770ASP M52778SP M5230L m52760sp M51971L m51957bl series M54640 M65817AFP
Contextual Info: ASSPs ICs for Visual and Audio Equipments ICs for Information and Communication Equipments ICs for Control , Driver and Others General Purpose ICs Preceding Page MITSUBISHI ELECTRIC CORPORATION ICs for Visual and Audio Equipments Sound Processor TV Sets