2006 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1 256Mbit ( 8Mx32bit ) Mobile SDR , / Apr. 2006 2 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BLF(P) Series 11 DESCRIPTION The , supply of 1.8V (nominal). Rev 1.0 / Apr. 2006 3 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BLF , KGD product availability and informations. Rev 1.0 / Apr. 2006 4 256Mbit ( 8Mx32bit ) Mobile
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256MBit
8Mx32bit)
256Mbit
32bits
166MHz
133MHz
105MHz
200us
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Not Available
Abstract: No abstract text available
Text: VM43217405,VM83217405 4M, 8Mx32-Bit Dynamic RAM Module Description The VM43217405 and VM83217405 , G ) S3 OS ON SV VM43217405.VM83217405 4M, 8Mx32-Bit Dynamic RAM Module Block Diagram , 1G 5-0128(1) 763 VM43217405.VM83217405 4M, 8Mx32-Bit Dynamic RAM Module visa Block , COL COL COL COL COL COL COL COL n/a X VM43217405,VM83217405 4M, 8Mx32-Bit Dynamic RAM Module DQ S , High - Z RAS ONLY REFRESH CBR REFRESH 1G 5- 0128Ì1) 765 VM43217405.VM83217405 4M, 8Mx32-Bit
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VM43217405
VM83217405
8Mx32-Bit
VG2617405)
VM43217405C
50/60ns
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2007 - hy5s5b2clfp
Abstract: hy5s5b2clfp-6e
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev1.1 / Jun. 2007 1 256Mbit ( 8Mx32bit ) Mobile SDR , Rev 1.1 / Jun. 2007 2 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series DESCRIPTION , supply of 1.8V (nominal). 11 Rev 1.1 / Jun. 2007 3 256Mbit ( 8Mx32bit ) Mobile SDR Memory , availability and informations. 11 Rev 1.1 / Jun. 2007 4 256Mbit ( 8Mx32bit ) Mobile SDR Memory
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256MBit
8Mx32bit)
256Mbit
32bits
200us
hy5s5b2clfp
hy5s5b2clfp-6e
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2007 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev1.0 / Jun. 2007 1 11 256Mbit ( 8Mx32bit , 1.0 / Jun. 2007 2 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series DESCRIPTION , 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series INFORMATION for Hynix KNOWN GOOD DIE With , 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series FEATURES â Standard SDRAM
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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M404A
Abstract: No abstract text available
Text: standard pinout VM43217400D.VM83217400D 4M, 8Mx32-Bit Dynamic RAM Module The VM43217400D and , VM43217400D.VM83217400D 4M, 8Mx32-Bit Dynamic RAM Module Pin assignment (Front View) V/S0 o 36 Pin Out Pin 1 2 3 4 , ) VM43217400D.VM83217400D 4M , 8Mx32-Bit Dynamic RAM Module Block Diagram (VM43217400D) CAS2 CAS WE noi DÛ2 DQ3 DQ4 OË , , 8Mx32-Bit Dynamic RAM Module Block Diagram (VM83217400D) CASO" C Ä S 2' WE ' CAS WE CAS U1 , 1G5-0132(1) 747 VM4321740QD,VM83217400D 4M, 8Mx32-Bit Dynamic RAM Module Absolute Maximum Ratings
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VM43217400D
50/60ns
VM43217400D
VM83217400D
8Mx32-Bit
32-bit
VG2617400D)
M404A
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2008 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.5 / Aug. 2008 1 11 256Mbit ( 8Mx32bit , - Typo Corrected. Aug. 2008 Rev 1.5 / Aug. 2008 2 11 256Mbit ( 8Mx32bit ) Mobile SDR , . 2008 3 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2CLF(P) Series INFORMATION for Hynix , . Rev 1.5 / Aug. 2008 4 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2CLF(P) Series
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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2008 - H55S2622JFR
Abstract: mobile MOTHERBOARD CIRCUIT diagram 3g mobile MOTHERBOARD CIRCUIT diagram H55S2532JFR
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.0 / Nov. 2008 1 11256Mbit ( 8Mx32bit ) Mobile , . 2008 Rev 1.0 / Nov. 2008 2 11256Mbit ( 8Mx32bit ) Mobile SDR H55S2622JFR Series H55S2532JFR , . 2008 3 11256Mbit ( 8Mx32bit ) Mobile SDR H55S2622JFR Series H55S2532JFR Series INFORMATION , . Rev 1.0 / Nov. 2008 4 11256Mbit ( 8Mx32bit ) Mobile SDR H55S2622JFR Series H55S2532JFR Series
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256MBit
8Mx32bit)
11256Mbit
H55S2622JFR
H55S2532JFR
32bits
200us
mobile MOTHERBOARD CIRCUIT diagram
3g mobile MOTHERBOARD CIRCUIT diagram
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2008 - hy5s5b2clfp
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.5 / Aug. 2008 1 11 256Mbit ( 8Mx32bit ) Mobile , ( 8Mx32bit ) Mobile SDR Memory HY5S5B2CLF(P) Series DESCRIPTION The Hynix HY5S5B2CLF(P) is suited for , 1.8V (nominal). Rev 1.5 / Aug. 2008 3 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2CLF(P , availability and informations. Rev 1.5 / Aug. 2008 4 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory
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256MBit
8Mx32bit)
256Mbit
32bits
110mA
Page11)
200us
hy5s5b2clfp
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2008 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/ Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.0 / Jun. 2008 1 256Mbit ( 8Mx32bit ) Mobile SDR , Date Mar. 2008 Jun. 2008 Remark Preliminary Rev 1.0 / Jun. 2008 2 256Mbit ( 8Mx32bit ) Mobile , ( 8Mx32bit ) Mobile SDR Memory HY5S5B3CLFP Series 11 INFORMATION for Hynix KNOWN GOOD DIE With the , 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B3CLFP Series 11 FEATURES Standard SDRAM Protocol
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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2006 - HY5MS5B2LFP
Abstract: No abstract text available
Text: are implied. Rev 1.0 /Aug. 2006 1 1Mobile DDR Memory 256Mbit ( 8Mx32bit ) 1 HY5MS5B2LF(P)-xE , ) Rev 1.0 /Aug. 2006 2 1Mobile DDR Memory 256Mbit ( 8Mx32bit ) 1 HY5MS5B2LF(P)-xE Series , ( 8Mx32bit ) 1 HY5MS5B2LF(P)-xE Series The Hynix HY5MS5B2LF(P)-xE has the special Low Power function , 1.0 /Aug. 2006 4 1Mobile DDR Memory 256Mbit ( 8Mx32bit ) 1 HY5MS5B2LF(P)-xE Series 256M , Package Lead LVCMOS Rev 1.0 /Aug. 2006 5 1Mobile DDR Memory 256Mbit ( 8Mx32bit ) 1
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256MBit
256MBit
32bits)
8Mx32bit)
HY5MS5B2LFP
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2006 - Not Available
Abstract: No abstract text available
Text: licenses are implied. Rev 0.2 / May. 2006 1 11Preliminary Mobile DDR Memory 256Mbit ( 8Mx32bit , data strobe Rev 0.2 / May. 2006 2 11Preliminary Mobile DDR Memory 256Mbit ( 8Mx32bit , 3 11Preliminary Mobile DDR Memory 256Mbit ( 8Mx32bit ) HY5MS5B2LF(P)-xE Series The Hynix , 256Mbit ( 8Mx32bit ) HY5MS5B2LF(P)-xE Series FBGA 90Ball ASSIGNMENT 1 2 DQ 3 4 5 6 , Memory 256Mbit ( 8Mx32bit ) HY5MS5B2LF(P)-xE Series 90Ball FBGA FUNCTION DESCRIPTIONS(I) SYMBOL TYPE
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256MBit
256MBit
32bits)
11Preliminary
8Mx32bit)
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2006 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.0 / Apr. 2006 1 256Mbit ( 8Mx32bit ) Mobile SDR , / Apr. 2006 2 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BLF(P) Series 11 DESCRIPTION The , supply of 1.8V (nominal). Rev 1.0 / Apr. 2006 3 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BLF , KGD product availability and informations. Rev 1.0 / Apr. 2006 4 256Mbit ( 8Mx32bit ) Mobile
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256MBit
8Mx32bit)
256Mbit
32bits
166MHz
133MHz
105MHz
200us
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2008 - Not Available
Abstract: No abstract text available
Text: 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O Specification of 256M ( 8Mx32bit ) Mobile , circuits described. No patent licenses are implied. Rev 1.4 / Jun. 2008 1 11 256Mbit ( 8Mx32bit , 1.4 / Jun. 2008 2 11 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series , 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series INFORMATION for Hynix KNOWN GOOD DIE With , 256Mbit ( 8Mx32bit ) Mobile SDR Memory HY5S5B2BCLF(P) Series FEATURES â Standard SDRAM Protocol
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256MBit
8Mx32bit)
256Mbit
32bits
200us
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ATI SB450
Abstract: SB450 OZ711MP ENE3910 MS-1036 et1310 Socket 754 WOOFER hp BIOS 2.6 "Socket 754"
Text: 5 4 3 2 1 MSI MS-1036 Ver:0A D D AMD K8 Socket 754 GDDR3 8MX32bit *8PCS 15~16 3~6 DDR 333/400 Clock Generator 17 7 8 HT DDR SODIMM * 2 LCD 32 C LVDS DVI_A/D PCIE NEW CARD (PCI-E/USB PCI-E) 26 DVI 32 VGA ATI M26-X 12~14 North Bridge PCIE TV OUT 32 RGB ATI RX480 9~11 PCIE LAN ET1310 30 C CAMEARA(USBX1) TV TURE(USBX1) USB 2.0 x3 31 31 31 Mini PCI Socket 29 USB HDD 33 B South Bridge PIDE PCI
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MS-1036
8MX32bit
M26-X
RX480
ET1310
OZ711MP
1394a
SB450
ENE3910
ALC822
ATI SB450
SB450
ENE3910
et1310
Socket 754
WOOFER
hp BIOS 2.6
"Socket 754"
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ce1h
Abstract: No abstract text available
Text: HANBit HMF8M32M8V Flash-ROM Module 32MByte ( 8Mx32Bit ), 72Pin-SIMM, 3.3V Design Part No. HMF8M32M8V GENERAL DESCRIPTION The HMF8M32M8V is a high-speed flash read only memory (FROM) module containing 16,777,216 words organized in a x32bit configuration. The module consists of eight 4M x 8bit FROM mounted on a 72-pin, double -sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal
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HMF8M32M8V
32MByte
8Mx32Bit)
72Pin-SIMM,
HMF8M32M8V
x32bit
72-pin,
ce1h
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1997 - HYM532814CM
Abstract: HY5117404C HYM532814C HYM532814CMG
Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532814CM is Tin plated and HYM532814CMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte
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HYM532814C
8Mx32
8Mx32-bit
HY5117404C
HYM532814CM
HYM532814CMG
72-Pin
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HY5117400A
Abstract: No abstract text available
Text: HYM532810A M-Series 8Mx32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22§ Þ decoupling are mounted for each DRAM. The HYM532810AM/ASLM/ATM/ASLTM are Tin-Lead plated and HYM532810AMG/ALMG/ATMG/ALTMG are Gold plated socket type Single In-line Memory Modules suitable for easy interchange and addition of 32M byte memory. FEATURES PIN
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HYM532810A
8Mx32-bit
32-bit
HY5117400A
HYM532810AM/ASLM/ATM/ASLTM
HYM532810AMG/ALMG/ATMG/ALTMG
1CF13-10-DEC94
72pin
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1997 - Not Available
Abstract: No abstract text available
Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532810CM is Tin plated and HYM532810CMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte memory
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HYM532810C
8Mx32
8Mx32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pin
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HY5117404A
Abstract: HYM532814AM HYM532814 HYM5332814A HY5117404
Text: HYM532814A M-Series 8Mx32-bit CMOS SDRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5332814A is a 8M x 32-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.1§ Þ and 0.01§ Þ decoupling are mounted for each DRAM. The HYM532814AM/ASLM/ATM/ASLTM are Tin-Lead plated and HYM532814AMG/ASLMG/ATMG/ASLTMG are Gold plated socket type Single In-line Memory Modules suitable for easy interchange and addition of
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HYM532814A
8Mx32-bit
HYM5332814A
32-bit
HY5117404A
HYM532814AM/ASLM/ATM/ASLTM
HYM532814AMG/ASLMG/ATMG/ASLTMG
1CF13-10-DEC94
72pin
HYM532814AM
HYM532814
HY5117404
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1997 - HYM532810BM
Abstract: HY5117400B HYM532810B HYM532810BMG
Text: HYM532810B M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810B M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532810BM is Tin plated and HYM532810BMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte memory
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HYM532810B
8Mx32
8Mx32-bit
HY5117400B
HYM532810BM
HYM532810BMG
72-Pin
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1997 - HY5117400C
Abstract: HYM532810C HYM532810CM HYM532810CMG dec97
Text: HYM532810C M-Series 8Mx32 bit FP DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532810C M-Series is a 8Mx32-bit Fast Page mode CMOS DRAM module consisting of sixteen HY5117400C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532810CM is Tin plated and HYM532810CMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte memory
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HYM532810C
8Mx32
8Mx32-bit
HY5117400C
HYM532810CM
HYM532810CMG
72-Pin
dec97
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1997 - HYM532814BM
Abstract: HY5117404B HYM532814B
Text: HYM532814B M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814B M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404B in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532814BM is Tin plated and HYM532814BMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte
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HYM532814B
8Mx32
8Mx32-bit
HY5117404B
HYM532814BM
HYM532814BMG
72-Pin
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Not Available
Abstract: No abstract text available
Text: ASYNC DRAM MODULE DATA BOOK 8Mx32-bit CMOS DRAM MODULE AC CHARACTERISTICS HYM532810A M-Series #
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HYM532810A
8Mx32-blt
32-bit
HY5117400A
HYM532810AM/ASLM/ATM/ASLTM
HYM53281OAMG/ALMG/ATMG/ALTMG
72pin
HYM53281OA/AL
HYM532810AT/ALT
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1997 - HY5117404C
Abstract: HYM532814C HYM532814CM HYM532814CMG HYM532814
Text: HYM532814C M-Series 8Mx32 bit EDO DRAM MODULE based on 4Mx4 DRAM, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM532814C M-Series is a 8Mx32-bit Extended Data Out mode CMOS DRAM module consisting of sixteen HY5117404C in 24/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF decoupling capacitors are mounted for each DRAM. The HYM532814CM is Tin plated and HYM532814CMG is Gold plated socket type Single In-line Memory Module suitable for easy interchange and addition of 32M byte
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HYM532814C
8Mx32
8Mx32-bit
HY5117404C
HYM532814CM
HYM532814CMG
72-Pin
HYM532814
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Not Available
Abstract: No abstract text available
Text: -S e rie s 8Mx32-bit CM O S DRAM MODULE with EXTENDED DATA OUT ORDERING INFORMATION PART N U M B
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HYM532814A
8Mx32-bft
HYM5332814A
32-bit
HY5117404A
HYM532814AM/ASLM/ATM/ASLTM
YM532814AMG/ASLMG/ATMG/ASLTMG
002f3
HYM532814A
32814A
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