29F400T Search Results

Contextual Info: SGS-THOMSON M 29F400T M 29F400B raD»H[Lll e'inM l)i!lD(ei 4 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical

29f400tc

Abstract: *22AB
Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS M BM 29F400TC-55-70-90/MBM29F400BC-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs

NCC equivalent

Contextual Info: 29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

29f400 isp

Abstract: PXAG49 RTC-8563 TTL catalog J15-20
Contextual Info: phyCORE-XAGx Hardware Manual Edition May 2000 A product of a PHYTEC Technology Holding company phyCORE-XAGx In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a product is not protected. Additionally, registered patents and

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

amd29f400

Abstract: amd29f400b 29F400B-90TC
Contextual Info: BRIGHT Preliminary 29F400T/BM29F400B Microelectronics Inc. 4MEGABIT 512K X 8 / 256K X 16 5VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F400 is an 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512 Kbytes of 8-bits each, or 256 Kbytes of 16 bits each. The device is offered in standard 44-pin SOP and 48-pin

Contextual Info: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n

programming 29F400

Abstract: 29f400 29f400t am29f400
Contextual Info: P R E L IM IN A R Y 29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ ■ — Minimizes system level power requirements

Funkamateur

Abstract: 82C251 PLCC-44 RTC-8563 RS485-Schnittstelle 476d 2x128
Contextual Info: phyCORE-XACx Hardware-Manual Ausgabe Juni 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG phyCORE-XACx Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

29F400 PSOP

Contextual Info: BRIGHT 29F400T/BM29F400B Microelectronics Inc. 4MEGABIT 512K x 8/ 256K × 16 5VOLT SECTOR ERASE CMOS FLASH MEMORY GENERAL DESCRIPTION The BM29F400 is an 4 Megabit, 5.0 volt-only CMOS Flash memory device organized as a 512 Kbytes of 8-bits each, or 256 Kbytes of 16 bits each. The device is offered in standard 48-pin TSOP

MX29F400T

Abstract: SA10
Contextual Info: 29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

Contextual Info: 29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: 29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

29f400 psop

Abstract: intel 28f200 amd 29f200 29F200 29F200 flash intel 28F400 datasheet 29f200 amd29f400 29F200 amd 29F400 code
Contextual Info: E AP-615 APPLICATION NOTE Accommodating Industry Trends in Boot Code Flash Memory COLLIN K. ONG TECHNICAL MARKETING ENGINEER DEBORAH SEE FLASH SOFTWARE ENGINEER April 1995 Order Number: 292169-001 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

programming AM29F400

Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Contextual Info: P R E L IM IN A R Y 29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements

29F400-70

Abstract: 29f400 programming 29F400 9F400 29F400-90
Contextual Info: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors

Contextual Info: Y I I I I VI A I •■ ■ w W 11’1 1 1 29F400T/B Series 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • • • • • • 5.0 V 1 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 90 ns access time

29F400-70

Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Contextual Info: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption

DS2401

Abstract: RTC-8563 mini project using 8051 microcontrollers programming 29F400 plcc44 socket mechanical data
Contextual Info: phyCORE-PXACx Hardware Manual Edition September 2001 A product of a PHYTEC Technology Holding company phyCORE-PXACx In this manual are descriptions for copyrighted products that are not explicitly indicated as such. The absence of the trademark  and copyright () symbols

MX29F400BTC-55

Abstract: MX29F400BMC-55 2223H MX29F400BTC-70
Contextual Info: 29F400T/B 4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY FEATURES • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 55/70/90/120ns • Low power consumption

Contextual Info: 29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES I • • • • • • • • • • • • Organization . . . 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

Contextual Info: 29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical

85C30

Abstract: serial controller 85c30 MAX238 29f400 GALILEO TECHNOLOGY R30xx R3051 R3052 R3081 Galileo-3
Contextual Info: Galileo-3 Pocket-Size R30XX Galileo Embedded Computer Technology, Inc. FEATURES • Small size - 2.95” x 3.95” • Choice of high performance IDT CPUs - R3041, R3051, R3052, R3071, R3081 • 16 - 33MHz operation • 1MB DRAM - Expandable to 4MBytes • 1MB Flash memory