2223H Search Results
2223H Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 68002-223HLF | Amphenol Communications Solutions | BergStik®, Board to Board connector, Unshrouded Vertical Header, Through Hole, Single Row, 23 Positions, 2.54 mm (0.100in) Pitch. |
2223H Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2223-H | Bourns | Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR TORD HI AMP 820UH HORZ | Original | 1 | |||
| 2223-H-RC | Bourns | Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR TORD HI AMP 820UH HORZ | Original | 1 |
2223H Price and Stock
Panasonic Electronic Components ECW-H12223HVBCap Film 0.022uF 1250V PP 3% (23 X 8.5 X 21.5mm) Radial 15mm 105°C Bulk |
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ECW-H12223HVB |
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ECW-H12223HVB | Bulk | 39 Weeks | 300 |
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Samtec Inc SSQ-122-23-H-S-LL |
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SSQ-122-23-H-S-LL |
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Samtec Inc HTSW-122-23-H-Q-LL |
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HTSW-122-23-H-Q-LL |
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Samtec Inc SSW-122-23-H-S-LL |
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SSW-122-23-H-S-LL |
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Samtec Inc SSW-122-23-H-D-RA-LL |
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SSW-122-23-H-D-RA-LL |
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2223H Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
NCC equivalentContextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors |
OCR Scan |
tms29f400ttms29f400b8-bit/26214416-bit+5 | |
Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
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socket s1g1amd turion 64 mobile technologyam2 amdamd am2 opteron pin package+6 | |
amd 29F400AB
Abstract: 29F400AT 29F400AB
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OCR Scan |
am29f400at/am29f400abs-bit/26216-bit44-pin+7 | |
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Contextual Info: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors |
OCR Scan |
s29f4o0t-55tcs29f4q-150t3s29f400t-+5 | |
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Contextual Info: Ä P M Ä IM ! OM F©KffiíL&YO©M in te i 82374EB/82374SB EISA SYSTEM COMPONENT (ESC In te g ra te s E ISA C o m p a tib le Bus C o n tro lle r — T ra n s la te s C y cles B e tw e e n E ISA and ISA Bus — S u p p o rts E IS A B u rst an d S tan d ard |
OCR Scan |
82374eb/82374sbmaster16290476-d32l17s | |
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Contextual Info: Hiyli P e r f o r m a n c i 1 •■ AS29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n |
OCR Scan |
as29f400512kx8256kx16ip9f400t-1sotc+6 | |
2216H
Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
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OCR Scan |
tmp95cs5416-bittmp95cs54f100-pin+5 | |
29F400TCContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90 |
OCR Scan |
ds05-20851-4e8/256k29f400tc-55/-70/-90/mbm29f400bc-55/-70a9048-pin+6 | |
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Contextual Info: ? BMI FUJITSU SEMICONDUCTOR DATA SHEET • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard word-wide pinouts |
OCR Scan |
48-pin44-pinfpt-48p-m19fpt-48p-m20 | |
JS28F00am29
Abstract: PC28F00BM29EWHA PC28F00AM29EWLA pc28f00am29ew JS28F00AM29EWxx JS28F00AM29EW pc28f00am29 JS28F00AM29EWHA JS28F512M29 RC28F256M29EWLA
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256mb512mbjs28f256m29ewxxpc28f256m29ewxx+15 | |
3VF1
Abstract: 82443ZX PMB 3330 PMB 8815 intel AF 82801
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OCR Scan |
440zx82443zx82801aa82801ab+4 | |
S29GL128S
Abstract: S29GL512S S29GL01GS GL512S S29GL256S GL256S s29gl128s10tfiyyx JESD68-01 GL01GS S29GL01GS11
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s29gl01gss29gl512ss29gl256ss29gl128s+6 | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M 2M x 16 BIT MBM29BS/BT32LF 18/25 • GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed |
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ds05-20913-2embm29bs/bt32lf60-ballmbm29bs/+4 | |
JS28F512M29
Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
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m29ew256-mbit512-mbitx8/x16+15 | |
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P4505
Abstract: intel i5 520M BGA1288 core i7 i5-520M i5-520E CATERR intel celeron 633 AA-64 CATERR DEASSERTED
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i7-660uei7-620le/i7-610ei5-520e+12 | |
tilex
Abstract: i7-600 Mobile GFX 2BA
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Original |
i7-600i5-500i5-400i3-300+9 | |
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Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, |
Original |
f0401 | |
Micron 512MB NOR FLASH
Abstract: M29W512GH Micron 512MB NOR FLASH 8bit data 555E-03
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Original |
512mbm29w512gh256mb32-word+7 | |
21150-AA
Abstract: LJ-04647 21154AA 21154 PCI-to-PCI Bridge Product Brief
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Original |
futur21154r24kar24ja21150-aa+3 | |
S29GL512P
Abstract: MX29GL512E S29GL512N mx29gl S29GL MX29GL512 Spansion S29GL512P Macronix s29gl512 S29GL512N datasheet
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mx29gl512es29gl512ps29gl512nmx29gl+6 | |
Macronix
Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h
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Original |
mx29f200cmx29f400cam29f200bam29f400b+4 | |
sekisui 5760
Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
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sis540sekisui 5760sis950sis chipset 486+7 | |
Spansion S29GL512N11Contextual Info: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages |
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s29glxxxns29gl512ns29gl256ns29gl128n+4 | |
SPANSION gl512p FLASH
Abstract: GL256P GL512P GL128P SPANSION gl512p S29GL-P spansion S29GL128 S29GL256 GL01GP S29GL01G
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s29gl-ns29gl-p110nmspansion gl512p flash+8 | |