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    oiah

    Contextual Info: _ L SCALA NON IMPEGNATIVA COO NOT S C A L E DIMENSIONI [N <0IM ENSIO NS IN) THy mm PROIEZIONE EUROPEA EU R O PEAN P R O J E C T I O N ) PART.SECT.~Ä^Ä] +0. 2 1 .6 3 .2 ► ± 0 .3 T I •> n fi V I I ! ! I I iu U i n . i l. ; w A «« Q ±0 . 3


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    oiah PDF

    Contextual Info: r r i ri0 \B TECHNOLOGY LT1246/LT1247 1MHz Off-Line Current M ode PWM and DC/DC Converter f€OTUR€S D C S C R IP T IO n • Current Mode Operation to 1MHz ■ 30ns Current Sense Delay ■ < 250jli.A Low Start-Up Current ■ Current Sense Leading Edge Blanking


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    lt1246/lt1247250jiuc18421246/lt1247+5lt1105lt1170/lt1171/lt1172100khzlt1241-5500khz PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27tfc1n5438tfc 56302n5161+7germanium2n41931n1319a2023 transistor2n2171n5159transistor bf 175 PDF

    LZ-230 zener diode

    Abstract: lz 04 "50 watt zener diode" zener 7.5 B 47
    Contextual Info: CENTRAL SEMICONDUCTOR T ï de | n t m t 3 □□oost.b s /,f 10 Watt Zener Diode • 5% Tolerance • Case D Do-4 TYPE NO. Zener Voltage V z @ lz Test Current lz Zener Impedance Zz Maximum Zener Current |ZM TYPE NO. Zener Voltage V z @ lz Test Current lz


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    1n3993a1n3994a1n3995a1n3996a+101n3997a1n3998a1n3999a/1n2970b1n4000a/1n2971b1n2972b1n2973blz-230 zener diodelz 0450 watt zener diodezener 7.5 b 47 PDF

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


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    z1000mz4614mz46271n4099+13m4l3052m4l30561n5158varactor 36zgermaniumhalbleiter index transistorhalbleiter buch2n53472n3054working of reactance modulatorje2955germanium transistor2n3902 PDF

    2N1256 S P

    Contextual Info: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min


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    2n31172n43832n43842n4385+72n4386cbr10cbr25ser/escbr12cbr30c1000se32n1256 s p PDF

    sharp lq10d367

    Abstract: LQ10D367
    Contextual Info: PREPARED BY : DATE SPEC No. LCY-99101 FILE No. SHARP APPROVED BY : ISSUE : Jul.l, 1999 DATE PAGE LCD DEVELOPMENT GROUP J S J . L /9 M : 20 pages APPLICABLE GROUP SHARP CORPORATION DEVELOPMENT ENGINEERING DEPT, n TFT DIVISION. I SPECIFICATION TFT LCD GROUP


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    lcy-99101lq10d367lcy99101-llcy99101+3loy9910v-19lcy99i01sharp lq10d367 PDF

    2x1 multiplexer

    Contextual Info: H O N E YüJELL/SS ELEK-i MIL ~Ü3 D Ë J 4 5 5 1 0 7 2 O O O O S B b 1 "|~ Honeyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays


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    hc20000mil-m-38510comm052x1 multiplexer PDF

    7915a

    Abstract: yx 801 TFK ad 164 H13-31C st z7s SCR 131- 6 WJ 60 ic stk 432 090 LHi 878 34B SOT rjh ah
    Contextual Info: ? — S • £ / — h NEC Í Í T / \ f Z 4 t ’7 h • '> > $ ^ P D 1 7 0 0 5 l i , T-V i> 9 \s • v -f ? □ zi > ' y ~ f • ~7 >f ^ □ □ > Y P — 5 • - > * x A f f l / \ - K ^ X T7 ^ |* lil L fc 4 t'- y h • > > 7¡\s3- y 7° C M O S h P -7 T -ÎO


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    upd170057915ayx 801tfk ad 164+7h13-31cst z7sscr 131- 6 wj 60ic stk 432 090lhi 87834b sotrjh ah PDF

    honeywell m 944 r

    Abstract: lasar DFC-4 transistor tt 2190 em MXC4 DSC8
    Contextual Info: HONEYIilELL/SS ELEKn MIL 03 ËË1 45S1Ô72 DD0027S S |~D T -Ÿ 2 -//-0 ? Honeywell h c t s o o o , h c t -isooo Preliminary R A D IA T IO N T O L E R A N T C M O S G A T E A R R A Y S FAMILY FEATURES • Proven VLSI Design System VDS Toolkit • Radiation Tolerant Serie of 1.2-Micron CMOS


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    dd0027smil-m-38510honeywell m 944 rlasar+4dfc-4transistor tt 2190 emmxc4dsc8 PDF

    CBR-12

    Contextual Info: bl CENTRAL SE MICONDU CTOR 40<80 Amperes ^RRM <volts> DOGOlSfl a r T -Ô /-Ô I General Purpose Silicon Power Rectifier deI ^^ £ * "5 4 D I ooooisa 2 | CR40- CR40- CR40- CR40- CR40- CR40- CR40- CR40- 005 0 10 020 040 0 60 08 0 100 120 CR60- CR60- CR60-


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    cr40005cr400cr60010cr800+5cr40020cr60020cr40040cr600cbr-12 PDF

    Contextual Info: PLASTIC FILM CAPACITORS Application guidelines W hen you use non-inductive film capacitors, pay attention to the following. A\y\ d H fu |c K 1. DC Rated voltage vs. AC Rated voltage 1. Rated voltage of capacitor is normally specified at DC except for special type. When DC rated capacitor is oper­


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    PDF

    silr

    Contextual Info: VCRXS010i 5 Data Sheet 300V Input Micro Family DC-DC Converter Module Features • • • • • • • • • • • DC input range: 180 - 375V Input surge withstand: 400V for 100ms DC output: 2V - 48V Program m able output: l Ot o 110% Regulation: ±0.2% no load to full load


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    100ms6/00/1omsilr PDF

    LG Air Conditioning Repair

    Abstract: A12-212 600 Ilfz 44 Hitachi DC Electrolytic Capacitor Date Code jw6 III a12-212 711 tantalum jn7 hitachi TMCM electrolyt capacitor 472 wo2 marking
    Contextual Info: TMCS, TMCM SERIES TANTALUM CHIP CAPACITORS CHARACTERISTICS General Specifications Items TMCM series TMCS series - 55% + 85°C to + 125 “C with voltage derating I I Capacitance tolerance K F lo%>, M (520% 0.04 max (0.15-1.0 n F) 0.06 max (1.5-6.8 ,u F)


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    lo-3300806standard26/2rlg air conditioning repair+9a12-212 600ilfz 44hitachi dc electrolytic capacitor date codejw6 iiia12-212 711tantalum jn7hitachi tmcmelectrolyt capacitor 472wo2 marking PDF

    transistor B324

    Abstract: transistor B324 pin out B324 transistor off grid inverter schematics full subtractor circuit nand gates ALI 3105 i203 transistor B304 transistor mxe3
    Contextual Info: H o n eyw ell 4551872 HO NE Y WE LL / SS HC20000 ELEK, M IL 03E 00236 D Preliminary HIGH-PERFORMANCE CMOS GATE ARRAY FEATURES • Performance Optimized Series of 1.2-Micron CMOS Gate Arrays 1Proven VLSI Design System VDS Toolkit •Boundary and Internal Scan


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    hc20000transistor b324transistor b324 pin outb324 transistor+6off grid inverter schematicsfull subtractor circuit nand gatesali 3105i203 transistorb304 transistormxe3 PDF