250JI Search Results

Q11J

Abstract: THOMSON CD LM146 LM246 LM246N LM324 LM346 LM348
Contextual Info: / = T SG S-THO M SO N * 7 £ RäO g»i[LI(STr[B R!lD(@§ LM146 LM246 - LM346 PROGRAMMABLE QUAD BIPOLAR OPERATIONAL AMPLIFIERS > PROGRAMMABLE ELECTRICAL CHARAC­ TERISTICS . B A TTtR Y POWERED OPERATION « LOW SUPPLY CURRENT (250jiA/amplrfier > GAIN-BANDWIDTH PRODUCT : 1MHz

30kH

Contextual Info: UÎ\WL New Products TECHNOLOGY New Products LT1351 250jiA, 3 MHz, 200V/|as O p e ra tio n a l Am plifier F€RTUA€S DCSCftlPTIOn Gain Bandwidth: 3MHz Slew Rate: 2Q0V/jjs Supply Current: 250jjA The LT 1351 is a low power, high speed, high slew rate operational

Contextual Info: u im i New Products TECHNOLOGY LT1352/LT1353 Dual and Q uad 250|llA, 3MHz 200V/jis O p Amps l:€RTUR€S D C S C R IP T IO n 3MHz Gain Bandwidth 200V/ps Slew Rate 250jiA Supply Current per Amplifier The LTE’1352/LT1353 are dual and quad, very low power, high

Contextual Info: / = T *7 # » S G S -1 H 0 M S 0 N R ä D » IIL iig !r M D g L M 2 4 6 - L M 1 4 6 L M 3 4 6 PROGRAMMABLE Q U A D B IP O L A R O P E R A T I O N A L A M P L I F I E R S . PROGRAMMABLE ELECTRICAL CHARAC­ TERISTICS . BATTERY POWERED OPERATION . LOW SUPPLY CURRENT (250jiA/amplifier

IN4626

Abstract: IN4627
Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4099-1N4121 * 1N4614-1N4627 TYPE NUMBER 1N4099 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4107 1N4108 1N4109 1N4110 1N411I 1N4112 1N4113 1N4114 1N411S

Contextual Info: f r ^ y 7 S # G S - T H O M S O N S D 1 5 6 5 RF & MICROWAVE TRANSISTORS _ UHF PULSED APPLICATIONS • 500 WATTS @ 250jiSec PULSE WIDTH, 10% DUTY CYCLE ■ REFRACTORY GOLD METALLIZATION . EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE V z @ 250 iA (VOLTS M AX REVERSE LEAKAGE CURRENT Ir @ Vr (nA dc) (Vdc) M AX ZEN ER IM PED ANCE Z zt @ 250 |iA

IN4106

Contextual Info: K n o x S e m ic o n d u c t o r , In c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NU M BER N O M ZEN ER VOLTAGE Vz @ 250 nA VOLTS M AX ZEN ER IM PED ANCE Z zt @ 250 ^iA (OHM S) M AX REVERSE LEAKAGE CU R REN T Ir @ Vr (|iA dc)

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

YTF640

Contextual Info: YTF640 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSII I N DUSTRIAL APPLICATIONS Unit in m m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 1 0 .3 M AX. . ¡2 ¡3 .6 ± 0 .2 DRIVE APPLICATIONS. . L o w D r a i n - S o u r ce ON

Contextual Info: BU RR - BROW N ADS7822 12-Bit High Speed 2.7V Micro Power Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • 75kHz SAMPLING RATE The ADS7822 is a 12-bit sampling analog-to-digital converter with guaranteed specifications over a 2.7V to 3.6V supply range. It requires veiy little power even

Contextual Info: B U R R - BROW N OPA342 OPA2342 OPA4342 For most current data sheet and other product information, visit www.burr-brown.com Low Cost, Low Power, Rail-to-Rail OPERATIONAL AMPLIFIERS MicroAmplifier Series FEATURES DESCRIPTION • • • • • • The OPA342 series rail-to-rail CMOS operational

Contextual Info: 5V, 1A Linear Regulator w ith RESET and ENA BLE Description Features w h e n th e IC is p o w e rin g u p o r w h e n ­ ev er th e o u tp u t v o lta g e falls o u t of reg ­ u latio n . The RESET s ig nal is valid d o w n to V0UT=1V. T he CS-8121 is a 5V, 1A p re c isio n lin ear

Contextual Info: B U R R -B R O W N INA143 INA2143 For most current data sheet and other product information, visit www.burr-brown.com High-Speed, Precision, G = 10 or G = 0.1 DIFFERENCE AMPLIFIERS FEATURES APPLICATIONS • DESIGNED FOR LOW COST • G = 10V/V or G = 0.1 V/V

transistor IR 840

Abstract: OZ930
Contextual Info: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: Dual Channel High Speed Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem­ perature range of -55°C to +125°C e.g. military applications . Devices supplied have completed rigorous

IRFS1Z0

Abstract: 75150TC
Contextual Info: • International H g Rectifier HÛSSHSE 001574Ô flb? M I N R PD-9.438D IRFS1Z0 INTERNATIONAL RECTIFIER HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount Available in Tape & Reel Fast Switching Ease of Paralleling

IRF120

Abstract: IRF122
Contextual Info: HE D I Data Sheet No. PD-9.312H 40 55452 □001 04 2 2 | T - 3 f - n INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IR F 1 2 0 IR F 1 2 1

2N9038

Abstract: 2N5039 2N503S 2N903 2N5038 JANTX 2N5039 2N5039 JANTX JANTX 2N5038
Contextual Info: JAN, JANTX, JANTXV 2N5038 JAN, JANTX, JANTXV 2N5039 POWER TRANSISTORS 20 Amp, 150V, Double Diffused NPN Mesa FEATU RES • • • • • DESCRIPTION These M IL approved double diffused glass passivated mesa power transistors com bine fast-switching, low saturation

50N06LE

Contextual Info: J W S S em icon du cto r RFG50N06LE, RFP50N06LE, RF1S50N06LESM I April 1999 Data Sheet 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs Features • 50A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: 19-0243, Rev0, 3/94 3 .0 V /3 .3 V M icroprocessor Supervisory C ircuits _G eneral Description These devices are designed for use in systems powered by 3.0V or 3 3V supplies. See the selector guide in the back of this data sheet for similar devices designed for

Contextual Info: 3 0E J • 7*iBïi 2 3 7 _ 0 D 2 ^ b _ ' l S C S -T H O M S O N M m 'f .'Z P i - W s 6 s- TH0?si N _ i Lll(g¥IS IRDO(gi SG SP330 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S (o n ) SGSP330 450 V 3n Id 3A • HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss

Contextual Info: International H»HRectifier P D -9 .9 3 0 IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses