250JLI Search Results

Contextual Info: r r i ri0 \B TECHNOLOGY LT1246/LT1247 1MHz Off-Line Current M ode PWM and DC/DC Converter f€OTUR€S D C S C R IP T IO n • Current Mode Operation to 1MHz ■ 30ns Current Sense Delay ■ < 250jli.A Low Start-Up Current ■ Current Sense Leading Edge Blanking

HM-6505

Abstract: HM-6505-5 HMB505B
Contextual Info: H S L S L S l! A R R IS H M -6 5 0 5 SE M IC O N D U C T O R P R O D UCT S DIVISION A DIVISION OF MARAIS CORPORATION 4096 X 1 C M O S R A M Advance Information Pinout Features TOP V IE W • LO W POWER S T A N D B Y 250JLIW M A X . • LO W POWER O P E R A T IO N

Contextual Info: SFW/I9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V

Contextual Info: SFP9520 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n - In = -1 0 0 V 0 -6 & -6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: SFR/U9214 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 4 .0 In = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: SFP9510 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n In = -1 0 0 V 1 -2 Q -3 .6 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ cn CO Avalanche Rugged Technology II ■ - o CD I FEATURES V o cn SFS9Z14 Advanced Power MOSFET Q. A ■ 175°C Operating Temperature ■ Extended Safe Operating Area

Contextual Info: S F W /I9 52 0 Advanced Power MOSFET FEATURES BV DSS = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology R DS on = ■ Lower Input Capacitance In = -6.0 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature

Contextual Info: S F W /I9 6 3 0 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 0 0 V ^D S o n - 0 -8 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

Contextual Info: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V

C11371

Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Contextual Info: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub­ sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition

Contextual Info: SFR/U9120 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -1 0 0 V ^D S o n - 0 -6 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V

Contextual Info: S F W /I9 5 1 0 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V

Contextual Info: SFP9Z24 Advanced Power MOSFET FEATURES BV DSS = -60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - 0 . 2 8 Q. In = -9.7 A ■ 175°C Opereting Temperature TO-220 ■ Extended Safe Operating Area

Contextual Info: SFW/I9Z14 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -60V

Contextual Info: SFR/U9110 Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n - In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -100V

irf9640n

Abstract: 1RF9640 1RF9640S 422B IRF9640 D66A IRF9640S
Contextual Info: PD-9.422B International @*11Rectifier IRF9640 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channei Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = -200V ^DS on = 0 - 5 0 n lD = - 1 1 A

Contextual Info: SFR/U9024 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -6 0 V ^D S o n - 0.28 Q. In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V

SFP9614

Contextual Info: SFP9614 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS = -2 5 0 V ^ D S o n = 4 . 0 £2 lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : -1 0 |^A (M a x.) @ V DS = -250V

Contextual Info: SFS9520 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ 175°C Operating Temperature ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A M a x . @ V DS = -100V

Contextual Info: B V DSS • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = o ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -60V ■ Lower RDS(ON) ■ cn CO Avalanche Rugged Technology

Contextual Info: S F W /I9 61 4 Advanced Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = -250V

Contextual Info: SFS9630 Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V

Contextual Info: - o BVDSS CD 1 FEATURES V o cn SFP9Z14 Advanced Power MOSFET Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance ■ Improved Gate Charge lD = -6-7 A ■ 175°C Opereting Temperature ■ Extended Safe Operating Area