OFWE Search Results

CT8281

Abstract: CT10
Contextual Info: 2 MEG X 6 FLASH Dense-PacJdicrosystem s, Inc. 0 DPZ2MX8J3 EEPROM "J" LEADED STACK MODULE PRELIMINARY DESCRIPTION: The DPZ2MX8J3 "STACK" module is a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC

Contextual Info: '! 93 D P Z 1 2 8 X 1 6 A 3 o _ 128K x 16 FLASH EEPROM DENSE-STACK M O D U LE PRELIMINARY DESCRIPTION: The DPZ128X16A3 "DENSE-STACK" module is a revolutionary new mem ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless Chip Carriers SLCC) mounted on a co-fired

Contextual Info: PRELIMINARY AMD£I AmMCLOOXA 2 or 4 Megabyte 3.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2 or 4 MBytes of addressable Flash memory ■ ■ 2.7 V to 3.6 V, single power supply operation ■ ■ ■ — True interchangeability — Write and read voltage: 3.0 V -10/+20%

Contextual Info: Inleiding MODEL Aansluitingen GEBRUIKSAANWIJZING Installatie XG-C430X XG-C335X XG-C330X Snelstartgids LCD-PROJECTOR Basisbediening Handige voorzieningen Aanhangsel BELANGRIJK • Noteer hier de model- en serienummers, die staan aangegeven het achterpaneel van de projector. Deze

3UA12

Contextual Info: DENSE-PAC 64 Megabit FLASH EEPROM DPZ2MW32NV3 M I C R O S Y S T E M S DESCRIPTION: The D P Z 2 M W 3 2 N V 3 "V E R S A -S T A C K " m o d u le is a re v o lu tio n a ry new m e m ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip Carriers

application of microprocessor in aircrafts

Abstract: NEC 20PIN DIP
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT «PD4992 8-Bit Parallel I/O Calendar Clock The /¿PD4992is a CMOS integrated circuit which outputs 8-bit parallel time and calendar data in a system in which a microprocessor is employed. The ¿¿PD4992 operates at 32.768 kHz and provides year, month, day of month, day

3TK2841

Abstract: IEC 439-1 3ZX1012-0TK28-1JA1 pulsador DC-13 "Y35" siemens led
Contextual Info: Sicherheitskombination 3TK2841 IEC 60 439-1 1999 Betriebsanleitung Warnung: Gefährliche elektrische Spannung! Kann zu elektrischem Schlag und Verbrennungen führen. Vor Beginn der Arbeiten Anlage und Gerät spannungsfrei schalten. Unter Berücksichtigung der Umgebungsbedingungen müssen die Geräte

MT4C1024

Abstract: MT4C1024-8
Contextual Info: ASO MT4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin DIP (D-6) FEATURES • Industry standard pinout and timing • All inputs, outputs and clocks are fully TTL

sick wl 33

Abstract: PT 2299 MB814100-10 sick WL IIB814100-12 MB814100-12 MB814100-80 MB814400 B814100
Contextual Info: FUJITSU June 1990 Edition 1.0 M B 8 1 4 100-80/-10/-12 CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 1 Bit Fast Page Mode Dynamic RAM The Fujitsu MB814100isafullydecodedCMOSdynamicRAM DRAM thatcontainsa total of 4,194,304 memory cells in ax 1 configuration. The MB814100features a fast

krania

Abstract: 9j16 MB814101-10 MB814101-80
Contextual Info: FuflTSU June 1990 Edition 2.0 M B 8 1 4 1 0 1 -80/-10/-12 CMOS 4,194,304 B IT NIBBLE M O D E DYNAMIC RAM CMOS 4,194,304 x 1 Bit Nibble Mode Dynamic RAM The Fujitsu MB814101 is a f ully decoded C M O S dynamic RAM DRAM that contains a total o f4,194,304 memory ceils in a x 1 configuration. The MB814101 features a nibble

5 x 7 LED Dot Matrix 8086 assembly language code

Abstract: vhdl code for 4*4 keypad scanner ofw 731 Siemens Siemens OFW 731 CP032 automatic toll tax project Siemens ECU Schematic ECU Siemens C16x TL902 DATAMAN S3 Programmer
Contextual Info: VOLUME 10, NUMBER 6 U.S. $3.95 CANADA $4.95 JUNE 1997 A MILLER FREEMAN PUBLICATION • >C- :-:= ìt TO MARKET WITH HARDWARE-SOFTWARE CO-SIMULATION The U n iv e rs i ] iie ric W ritin g fo r " D e s ig n s»!* m r n t m m m w w . 1 j. SOFTWARE DEBUGGERS mHì1

CY7C4245

Contextual Info: fax id: 5715 Interfacing to RACEway: PitCREWjr Figure 1. The PitCREWjr has no programmable internal registers. Internal PitCREWjr state machines assemble and disassemble the route, address, and data long words embedded in the RACEway protocol. RACEway mastering is accomplished by controlling a single input signal. Figure 2 shows the

Y6930T

Abstract: Y6971T Y6972T B4535 Y6932T SM B4535 B4536 gigaset ZF-filter
Contextual Info: Klaus Ruffing Schnurlose ISDN-Anbindung: OFW-Filter als Schlüsselkomponenten für DECT DECT-Schnurloskonzepte der 2. Generation, das künftige Dual-Mode-System DECT-GSM und viele andere fortschrittliche Applikationen im Mobilfunk sind typische Einsatzgebiete für Oberflächenwellenfilter von S+M.

pierce oscillator

Abstract: epcos 868.3mhz
Contextual Info: Application Note SAW-Components Fundamentals of a SAWR stabilised Pierce oscillator. Schematic and PCB layout for a SAWR stabilised oscillator working at 915MHz and at 868.3MHz. App. Note #21 Author: Updated: Version: Department: Alexander Glas February 9, 1999

fifo

Abstract: ofwe CY7C384A addr RDCO CY7C4245 RT 8214 RT 8206 tag 8206
Contextual Info: Interfacing to RACEway: PitCREWjr D Used to interface between FIFOs and the General RACEway protocol. D Drives/receives a RACEway port directly. D Simple PitCREWjr is a simple fullĆduplex onĆramp to the RACEway fabric. The device has a standard RACEĆ master

Contextual Info: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

434m

Abstract: siemens matsushita saw 45 SAW-Filter B3550 Siemens ofw filter saw Siemens matsua
Contextual Info: Siemens Matsushita Components Matching of the B3550 and optimising the crosstalk by evaluating a good RF layout App. Note #4 Author: Updated: Department: Alexander Glas June 26, 1998 S+M OFW-EU-AS Siemens Matsushita Components SAW Components Application: Matching and optimised PCB for B3550

SCE2E

Contextual Info: SH A R P I SPEC No. 1 M F M Z - J 1 0 4 0 3 A ISSUE: Aug. 5. 1998_ To; REFERENCE SPECIFICATIONS Product Type 16M x8) Flash Metnoiy+2M(x8) SRAM L R S 1310A Model No. ( LR S1 3 1 OA) ♦This specifications contains 5 3 pages including the cover and appendix.

RAS 1210 SUN HOLD

Abstract: sun hold RAS 1210 965 IL 48t86 sun hold RAS 1210 FT M48TB6 JNC15
Contextual Info: SCS-mOMSOM M48T86 m 5 VOLT PC REAL TIME CLOCK • DROP-IN REPLACEMENT for PC-AT COMPUTER CLOCK/CALENDAR • COUNTS SECONDS, MINUTES, HOURS, DAYS, DAY of the WEEK, DATE, MONTH and YEAR with LEAP YEAR COMPENSATION ■ INTERFACED WITH SOFTWARE AS 128 RAM LOCATIONS:

Contextual Info: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation

ah7al

Abstract: NC-641 TIT lot trace code
Contextual Info: nD M ^ DPZ1MX16V3 I l / l D ens^ P a c M icrosystem s, Inc^ _1 M EC X 16 FLASH EEPROM VERSA-STACK M ODULE ADVANCED INFORMATION DESCRIPTION: The D P Z 1 M X 1 6V 3 "V E R S A -S T A C K " m odule is a revolutionary new memory subsystem using Dense-Pac

Contextual Info: TMS29LF800T, TMS29LF800B 1048576 BY 8-BIT/524288 BY 16-BIT FLASH MEMORIES SMJS826B - SEPTEMBER 1996 - REVISED OCTOBER 1987 * Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation • f • • Organization 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture

Contextual Info: E/M28C64 Timer E2 64K Electrically Erasable PROM October 1989 Description Features m Military and Extended Temperature Range SEEO’s E/M28C64 is a CMOS 5Vonty, 8 K x8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ’s advanced 1.25 micron

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20855-4E FLASH MEMORY CMOS 16M 2M x 8 BIT M BM 29LV 016T-30-90 -i 2/M B M 29 LV 01 6B-30-90 -12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands