MX29F1610 Search Results

Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

Contextual Info: MXIC MX29F1610 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 0,000 cycles Fast access time: 120/150ns Sector erase architecture

MX29F1610A

Abstract: MX29F1610B PM05
Contextual Info: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture

MX29F1610

Abstract: 29F1610-12 00F1H
Contextual Info: Introduction Selection Guide MX29F1610 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:10,000 cycles • Fast access time: 120/150ns • Sector erase architecture

Contextual Info: MX29F1610TC-12C3 1/2 IL08 16 M (2,097,152 x 8/1,048,576 x 16)-BIT FLASH EPROM —TOP VIEW— 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 INPUTS A0 - A19 BYTE CE1, CE2

MX-1610

Contextual Info: APPLICATION NOTE MX29F1610 16Mb FLASH MEMORY Since the erase/program time for flash memory are depended on the operation temperature, number of cycle, Vcc, and other factors. This application note is trying to optimize the erase/program performance by using the polling technology to check the

MX29F1610B

Abstract: MX29F1610A
Contextual Info: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

MX29F1610B

Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

MX29F1610B

Abstract: MX29F1610A
Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

Contextual Info: PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/120ns

Contextual Info: MX29F1610 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:10,000 cycles Fast access time: 100/120ns Sector erase architecture - 16 equal sectors of 128k bytes each

MX29F1610

Abstract: MX29F1610B MX29F1610A A14A
Contextual Info: INDEX PRELIMINARY MX29F1610A/B 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 70/90/120ns

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

Contextual Info: I V L I C MX9691L SINGLE CHIP SOLID STATE DISK CONTROLLER 1. FEATURE Host Interface Buffer RAM Manager • PCMCIA 2.1 and PC Card ATA standard compatible. - Memory mapped or I/O operation. • Compatible with all PC Card Services and Socket Service. • Fast ATA host-to-buffer burst transfer rates up to

Q20G

Abstract: 00F1H MX-2S
Contextual Info: is M « r r c a M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPRO M commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture - 16 equal sectors of 128k bytes each

00F1H

Contextual Info: TM M X29F161Q MACftOMX, INC. 1 B IS A -B n tS M x 8 / 1 M x 1 B C M 0 8 S IN G L E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 100,000 write/erase cycles

FAH 32

Contextual Info: 32 Megabit FLASH EEPROM DP5Z1MW32PV3 DESCRIPTION: The DP5Z1MW32PV3 ‘’VERSA-STACK’’ module is a memory subsystem using DPAC Technologies’ ceramic Stackable Leadless Chip Carriers SLCC mounted on a co-fired ceramic substrate. It offers 32 Megabits of

TC58V32FT

Abstract: ssd controller "SSD Controller" AS 108-120 TC5816FT macronix mxic dsp 74640 KM29N32000 KM29N32000TS MX29F1610
Contextual Info: MX9691L SINGLE CHIP SOLID STATE DISK CONTROLLER 1. FEATURE Host Interface Buffer RAM Manager • PCMCIA 2.1 and PC Card ATA standard compatible. - Memory mapped or I/O operation. • Compatible with all PC Card Services and Socket Service. • Fast ATA host-to-buffer burst transfer rates up to

flash memory sop 32-pin

Abstract: MX29F1610MC MX27C1000D MX27C4096Q flash memory 4m 44-pin MX27C1024D MX29F1610AMC
Contextual Info: PRODUCT SELECTION GUIDE 1. EPROM CAPACITY PART NUMBER CONFIGURATION 256K MX27C256D 32K x 8 45/55/70/90/100/120/150 CMOS 28 PIN CERAMIC DIP MX27C256M 32K x 8 45/55/70/90/100/120/150 CMOS 28 PIN PLASTIC SOP 512K 1M 2M 4M SPEED NS TECHNOLOGY PACKAGE MX27C256P

Device-List

Abstract: NEC D2716D novatek nt68f63 nt68f63 NEC D2732D D2716D 16V8H-25 ATMEL 220 24C16 D2732D 16V8H-15
Contextual Info: LabTool-48 Version 4.67 <ALL> Device List Page 1 of 20 ACTRANS AC29LV400B *44PS AC29LV400B *48TS AC29LV400T *44PS AC29LV400T *48TS ALi M6759 M6759 *44 M6759 *44Q M8720 Alliance AS29F040 AS29LV800T *48TS AS29LV800B *44PS AS29LV800B *48TS AS29LV800T *44PS Altera

MSP55lv512

Abstract: MSP55LV100S MSP55LV128 34A65 fujitsu msp55lv512 MSP55LV100G MSP55LV128M MSP55LV160 MSP55LV100 MSP55LV160A
Contextual Info: ＡＦ９８４５／４５Ｂ／４５Ｃ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９８４５ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｂ ＧＡＮＧ ＵＮＩＴ ＡＦ９８４５Ｃ ＧＡＮＧ ＵＮＩＴ Ｆｌａｓｈ Ｓｕｐｐｏｒｔ Ｇｒｏｕｐ，Ｉｎｃ．

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.