OF FET Search Results

IL33091

Abstract: IL33091AD mos transistor IL33091A IL33091AN MC33091AD MS-012AA
Contextual Info: TECHNICAL DATA Powerful High-grade FET driver IL33091A Description of basic functions. The capability of handling high voltages on power line attributed to transient commutation of loads in conditions of automobile exploitation. Load of microcircuit is a device on the base of MOS transistors

A CLIPPER CIRCUIT APPLICATIONS

Abstract: sd5000 SD210 future scope of jfet sd211 SD5000I sst211 sot-143 VSB uhf modulator analog jfet transistor n-channel to 92 FAST DMOS FET Switches
Contextual Info: High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application

Contextual Info: TC40107BP TC40107BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,

tc40107

Contextual Info: TC40107BP TC40107BP C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,

Contextual Info: TC40107BP C*MOS DIGITAL INTEGRATED CIRCUIT SILICO N M ONOLITHIC TC40107BP DUAL 2-INPUT NAND BUFFER/DRIVER TC40107BP is a dual 2-input NAND gate, of which output is of open-drain structure by use of N-channel MOS FET. Being capable of driving a large current,

siliconix sd210

Abstract: SD210 SD5000 SST211 AN301 mosfet 2n7000 2n4959 VSB uhf modulator analog Siliconix JFET application note SD5400
Contextual Info: AN301 High-Speed DMOS FET Analog Switches and Switch Arrays Introduction This Application Note describes in detail the principle of operation of the SD210/5000 series of high-speed analog switches and switch arrays. It contains an explanation of the most important switch characteristics, application examples, test data, and other application hints.

BF245 A spice

Abstract: BF245 spice electronic power generator using transistor BF245A spice BF245 BF245 B spice BF245 TRANSISTOR transistor BF245 Fet BF245 BF245 spice model
Contextual Info: Analog Electronics I Laboratory Exercise 2 FET Amplifier Aim of the exercise The aim of this laboratory exercise is to become familiar with operation of simple single FET transistor amplifier. Exercise illustrates transistor polarization, frequency characteristics and

2SJ32C

Abstract: 2SK14 2sk19 2SK2142 2sj320 2sj306 2SK142 2SK195 2SK2161
Contextual Info: SAtfm POWER MOS FETs 2 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

2sk1885

Abstract: 2sj270 2SK1871 2SK1883 2sk2164 2SK2227 2SJ26
Contextual Info: SAfiYO POWER MOS FETs 1 The Sanyo J-MOS series utilizes Sanyo's own fine fabrication process for power devices to develop an entire series of ultrahigh performance power devices capable of high voltage, high speed and large current operation. With performance of wide applications for virtually any types of power electronic equipment, the UH Series, AP Series and

p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Contextual Info: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the

GaAs MMIC Based Control Components with Integral Drivers

Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Contextual Info: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

G3VM-351E

Abstract: g3vm-351B
Contextual Info: MOS FET Relays G3VM-351B/E New Series with 350-V Load Voltage • Upgraded G3VM-3 Series. • Continuous load current of 120 mA • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . • Application Examples • Measurement devices

Contextual Info: MOS FET Relays G3VM-41GR8 Low 100-mΩ ON Resistance. High-power, 1-A Switching with SOP Package. • Continuous load current of 1 A. • ON resistance of 0.1 Ω typical suppresses output signal attenuation. • Dielectric strength of 1,500 Vrms between I/O.

G3VM-101LR

Abstract: G3VM-101
Contextual Info: MOS FET Relays G3VM-101LR World's Smallest SSOP Package MOS FET Relays with High Load Voltage of 100 V. • Leakage current of 200 pA max. when output relay is open. • Information correct as of May 2007, according to data obtained by OMRON. RoHS compliant

G3VM-351B

Abstract: G3VM-351E
Contextual Info: MOS FET Relays G3VM-351B/E New Series with 350-V Load Voltage. • Upgraded G3VM-3 Series. • Continuous load current of 120 mA • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . RoHS compliant ! • Application Examples

G3VM-81HR

Contextual Info: MOS FET Relays G3VM-81HR High-capacity MOS FET Relay Allowing Switching of a 1.25-A Continuous Load Current with a 80-V Load Voltage, 6-pin SOP Package. • Continuous load current of 1,250 mA. • Dielectric strength of 1,500 Vrms between I/O. • RoHS Compliant.

CBT3251

Abstract: CBT3251D CBT3251DB CBT3251DS CBT3251PW JESD22-A114 JESD22-A115 JESD78
Contextual Info: CBT3251 1-of-8 FET multiplexer/demultiplexer Rev. 01 — 21 December 2005 Product data sheet 1. General description The CBT3251 is a 1-of-8 high-speed TTL-compatible FET multiplexer/demultiplexer. The low ON-resistance of the switch allows inputs to be connected to outputs without adding

G3VM-351B

Abstract: G3VM-351E 351b
Contextual Info: MOS FET Relays G3VM-351B/E MOS FET Relay Series with 350-V Load Voltage • Upgraded G3VM-3 Series. • Continuous load current of 120 mA. • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . • RoHS Compliant. • Application Examples

G3VM-61er

Abstract: relay er-21 omron 61er 61er
Contextual Info: MOS FET Relays G3VM-61BR/ER New Analog-switching MOS FET Relays Featuring a High Capacity of 2.5 A. • Switches minute analog signals. • Low ON-resistance of 0.1 Ω max. • Continuous load current of 2.5 A. • RoHS compliant • Application Examples • Measurement devices

BB3583

Abstract: TELEDYNE PHILBRICK OP AMP TELEDYNE PHILBRICK TELEDYNE PHILBRICK 1480
Contextual Info: TELEDYNE COMPONENTS 2ÖE D aw toa aaab2ab ? 1480 Fast Settling High Voltage Operational Amplifier The 1480 is a fully differential FET-input op amp capable of operating over a supply voltage range of ±15V to +150V with common-mode and output voltages ranging to within 10V of

G3VM-401B

Abstract: G3VM-401E G3VM-4N
Contextual Info: MOS FET Relays G3VM-401B/E New Series of Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation • Switches minute analog signals. • Leakage current of 1 mA max. when output relay is open. • Upgraded G3VM-4N Series.

G3VM-61CR

Contextual Info: MOS FET Relays G3VM-61CR/FR New High-capacity MOS FET Relay Allowing Switching of a 2-A Continuous Load Current • Package designed with 1 channel and 8 pins. • Low ON-resistance of 0.12 Ω max. • Leakage current of 1.0 nA typical between output terminals

G3VM-351A

Abstract: G3VM-351D
Contextual Info: MOS FET Relays G3VM-351A/D New Standard Series with 350-V Load Voltage • Upgraded G3VM-2 Series. • Continuous load current of 120 mA. • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . • RoHS Compliant. • Application Examples