NPN TRANSISTOR 5V DARLINGTON Search Results

Contextual Info: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A

2SD1509

Contextual Info: 2SD1509 TO SH IBA 2 S D 1 509 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Low Saturation Voltage : v CE(sat) = 1-5V (Max.)

transistor 3242

Abstract: ZTX692B DSA003773
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX692B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V

1225 transistor 09 d

Contextual Info: T O SH IB A 2SD2604 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2604 HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : lipE —2000 (Min.) Low Saturation Voltage : V q £ (sat) = l*5V (Max.)

ZTX689B

Abstract: ztx689 DSA003773
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX689B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V

ZTX688B

Abstract: DSA003772
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX688B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Switching Times TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V

Contextual Info: TOSHIBA 2SD1662 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D1 6 6 2 HIGH CURRENT SWITCHING APPLICATIONS Unit in mm 1 5.9M A X • High DC Current Gain : hjrg —1000 (Min.) • Low Collector Saturation Voltage S53 2 + 0.2 : VCE(sat) = 1*5V (Max-)

ZTX690B

Abstract: DSA003773
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX690B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz

FXT690B

Abstract: ZTX690B DSA003757
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT690B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz

Contextual Info: DISCONTINUED NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FXT690B ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. Transition Frequency fT 150 TYP. MAX. UNIT CONDITIONS. MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz

Contextual Info: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

TRANSISTOR SOT23, Vbe 8V

Abstract: FMMT614 DSA003700
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.

2SD2401

Abstract: 2SB1570
Contextual Info: C Equivalent circuit 2SD2401 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1570 •Electrical Characteristics Unit VCBO 160 V ICBO VCB=160V 100max µA VCEO 150 V IEBO VEB=5V 100max µA V Ratings Unit VEBO 5 V V(BR)CEO IC=30mA 150min

2SD2438

Abstract: 2SB1587 transistor 2SD2438
Contextual Info: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A

2SD2438

Abstract: 2SB1587 transistor ,12v ,Ic 1A ,NPN
Contextual Info: Equivalent circuit 2SD2438 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1587 Application : Audio, Series Regulator and General Purpose ICBO VCB=160V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 150min V 8 A hFE VCE=4V, IC=6A

BU806

Abstract: CO530 BU807 "Darlington Transistor" npn darlington transistor 200 watts
Contextual Info: FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA

2SD2129

Contextual Info: TO SHIBA 2SD2129 2 S D 2 1 29 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS r <v> • High DC Current Gain : hpE —2000 (Min.) Low Saturation Voltage : V^ e (sat) = l-5V (Max.)

Contextual Info: T O SH IB A 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)

BU806

Abstract: BU807 CO530
Contextual Info: ÜàMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA

2SD2562

Abstract: 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

2SD2562

Abstract: 2SD256 2sb1649
Contextual Info: Equivalent circuit 2SD2562 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1649 100max µA V IEBO VEB=5V 100max µA V 150min 5000min∗ 1 A VCE(sat) IC=10A, IB=10mA 2.5max PC 85(Tc=25°C) W VBE(sat) IC=10A, IB=10mA 3.0max V Tj 150 °C

2SD2560

Abstract: 2SB1647 2sd25
Contextual Info: Equivalent circuit 2SD2560 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1647 100max µA V IEBO VEB=5V 100max µA V V(BR)CEO A hFE IB 1 A PC 130(Tc=25°C) Tj 150 –55to+150 °C Tstg IC=30mA 150min VCE=4V, IC=10A 5000min∗ VCE(sat)

FZT696B

Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8