NPN 2A TO 126 Search Results

2SD612

Abstract: 2SD612K
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION •With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power

2SD612

Abstract: 2SD612K
Contextual Info: Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power

TSB772

Abstract: BVceo-50V TSD882 TSD882CK
Contextual Info: TSD882 Low Vce sat NPN Transistor TO-126 Pin assignment: BVCEO = 50V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A TO-126 1. Emitter 2. Collector 3. Base Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics

2SC5099

Abstract: 2SA1907 DSA0016511
Contextual Info: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz

d 772 transistor

Abstract: TSD882 to-92 BV 86 transistor 152 M TRANSISTOR BV 32 TSB772 TSD882 TSD882CK NPN 2A TO 126
Contextual Info: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772

TRANSISTOR 434

Abstract: NPN 2A TO 126
Contextual Info: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772

cb 237

Abstract: BD235 bd233
Contextual Info: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS

60V transistor npn 2a

Abstract: d 772 transistor NPN 2A TO 126 60V transistor npn ic2a to-126 transistor Transistor TO-126 Transistor to 126
Contextual Info: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 60V BVCEO 30V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Complementary part with TSB772 Part No.

NPN Transistor 450v 1A To-92

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

BD233

Abstract: BD237-10 BD235 BD237
Contextual Info: TO-126 Plastic-Encapsulate Transistors^ BD233/235/237 TRANSISTOR NPN FEATURES - . . . A . Power dissipation Pcm: T O -1 2 6 1.25 W (Tamb=25°C) Æ'J : ^ “lector current 2A Ic m : 1 .E M IT T E R m ^ ^ so e sss^ •base voltage V(BR)cBo: BD233 : 4 5 V 2 .COLLECTOR

Contextual Info: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer

K*D1691

Contextual Info: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION : PT = 1.3W T. =25°C Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 3A 0.17V @ IC=1A, IB=0.2A Block Diagram ● Low spread of dynamic parameters ● High switching speed ●

bd131 equivalent

Abstract: BD131 EQUIVALENT IC bd131 BD132
Contextual Info: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING

BD681

Abstract: BD675A 679a BD679A BD677A HFE BD681 677a
Contextual Info: SavantIC Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD676A/678A/680A/682 ·DARLINGTON APPLICATIONS ·For medium power linear and switching applications PINNING

BD437

Abstract: BD433 ic 437 BD434 BD435 437 ic
Contextual Info: SavantIC Semiconductor Product Specification BD433/435/437 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD434/436/438 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

2SD1691

Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT „ 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C „ ORDERING INFORMATION Ordering Number Lead Free Plating

BD441

Abstract: BD439 BD440 BD442
Contextual Info: SavantIC Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220  FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1  ORDERING INFORMATION Ordering Number Lead Free Plating

2SD1691L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT  1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126  ORDERING INFORMATION Ordering Number

BD441

Abstract: BD439 equivalent bd439 BD440 BD442
Contextual Info: Inchange Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD440,BD442 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter

ic 803

Abstract: mje800 mje802
Contextual Info: SavantIC Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier

2N6039

Abstract: 2N6037 2N6038 2n6034
Contextual Info: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier