NPN 100N Search Results

NPN 100N Result Highlights (5)

Part	Manufacturer	Description	Download
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5810	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=1 A / hFE=400~1000 / VCE(sat)=-0.12 V / tf=180 ns / PW-Mini	Datasheet
TTC019	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PW-Mini	Datasheet

NPN 100N Price and Stock

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Murata Manufacturing Co Ltd


Murata Manufacturing Co Ltd LQH3NPN100NM0L FIXED IND 10UH 870MA 312MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LQH3NPN100NM0L	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Abacus	LQH3NPN100NM0L			143 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd LQH3NPN100NG0L FIXED IND 10UH 630MA 684MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LQH3NPN100NG0L	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Abacus	LQH3NPN100NG0L			143 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd LQH3NPN100NJ0L FIXED IND 10UH 710MA 360MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LQH3NPN100NJ0L	Tape & Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	LQH3NPN100NJ0L		3,750		7	1 - 10 $0.75 100 $0.49 1000 $0.21 10000 $0.20	Buy Now
Avnet Abacus	LQH3NPN100NJ0L			143 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

NPN 100N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
quan-tech Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 2N5307, quan-tech D39C4 GES6220	PDF
D39C4 Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 100Hz) D39C4 ei50 2n5306 GES6220	PDF
D38S1-4 Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S1-4 D38S7 GES93	PDF
D38S5 Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 D38S3' D38S5 hitachi 16 X 2 lcd 2N5232A	PDF
NPN Transistor TO92 5V 200mA Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A Contextual Info: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K	OCR Scan	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A	PDF
GES5307 Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A	PDF
D39C4 Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308 Contextual Info: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.	OCR Scan	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. D39C4 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5307 GES5308	PDF
2n3901 equivalent Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent	PDF
2N3877 Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220	PDF
TRANSISTOR 2n3901 Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 TRANSISTOR 2n3901 2N390 pnp 2N3901	PDF
2N3643 Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3643	PDF
n3860 Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860	PDF
2n3901 equivalent Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2n3901 equivalent	PDF
2N4424 Abstract: D39C4 quan-tech GES6220 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN 40	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 2N5307, D39C4 quan-tech GES6220	PDF

2N5089 equivalent Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307	PDF
D39C4 Abstract: GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BV C e o @ 10mA V hF E fT V CE(SAT) Min.-Max. @ IC,V C E (V> (V) Max. l c . *B Typical (MHz) Ccb@10V 1 MHz Typical (Pf) PT @ 25° C (mW) 2N4256 2N4424 2N4425 NPN NPN NPN 40	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A D39C4 GES6220 2N5305	PDF
PNP DARLINGTON 40V 100mA SOT-23 Abstract: SILICON COMPLEMENTARY transistors darlington IB 100MA NPN Contextual Info: NTE2404 NPN & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.	Original	NTE2404 NTE2405 100nA 100mA, 100MHz PNP DARLINGTON 40V 100mA SOT-23 SILICON COMPLEMENTARY transistors darlington IB 100MA NPN	PDF
marking code fg Abstract: transistor marking 020 "Darlington Transistor" BCV47 80 V NPN epitaxial silicon transistor vce max 100 ic max 100MA NPN Contextual Info: Central BCV47 TM Semiconductor Corp. NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCV47 type is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications	Original	BCV47 BCV47 OT-23 100nA 100mA, 100mA 100MHz 07-December marking code fg transistor marking 020 "Darlington Transistor" 80 V NPN epitaxial silicon transistor vce max 100 ic max 100MA NPN	PDF
Contextual Info: WA PN3568 NPN SILICON TRANSISTOR PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS EBC Collector-Base Voltage vCB0 Collector-Emitter Voltage	OCR Scan	PN3568 PN3568 500mA. 500mA 600mW 100nA 150mA	PDF
CA3096 Contextual Info: CA3096, CA3096A, CA3096C NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of five independent transistors two PNP and three NPN types	OCR Scan	CA3096, CA3096A, CA3096C CA3096C, CA3096A CA3096C CA3096	PDF
TR 3906 PNP SM Contextual Info: MMDT3946 COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • Complementary Pair One 3904-Type NPN, One 3906-Type PNP Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package	OCR Scan	MMDT3946 3904-Type 3906-Type OT-363 OT-363, MIL-STD-202, -10mA, 100MHz -100nA, TR 3906 PNP SM	PDF
ic an 6651 Abstract: MPS6652 MPS6601 MPS6602 MPS6651 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN MPS6601 M PS6602* PNP MPS6651 MPS6652* COLLECTOR 3 2 BASE PNP NPN 1 EMITTER EMITTER Voltage and current are negative for PNP transistors M AXIMUM RATINGS Symbol Rating C ollector-Em itter Voltage	OCR Scan	MPS6601/6651 MPS6602/6652 MPS6601 MPS6602* MPS6651 MPS6652* MPS6601/6602 MPS6651/6652 ic an 6651 MPS6652 MPS6602	PDF
transistor A2 Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A	Original	ZXTNS618MC 150mV 500mV DS31933 transistor A2 Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual	PDF
T2T TRANSISTOR Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is	OCR Scan	BSP52T1 OT-223 BSP52T1 inch/1000 BSP52T3 inch/4000 b3b72S5 T2T TRANSISTOR	PDF

NPN 100N Search Results

NPN 100N Result Highlights (5)

NPN 100N Price and Stock

Murata Manufacturing Co Ltd LQH3NPN100NM0L

Murata Manufacturing Co Ltd LQH3NPN100NG0L

Murata Manufacturing Co Ltd LQH3NPN100NJ0L

NPN 100N Datasheets Context Search

quan-tech

D39C4

D38S1-4

D38S5

NPN Transistor TO92 5V 200mA

GES5307

D39C4

2n3901 equivalent

2N3877

TRANSISTOR 2n3901

2N3643

n3860

2n3901 equivalent

2N4424

2N5089 equivalent

D39C4

PNP DARLINGTON 40V 100mA SOT-23

marking code fg

CA3096

TR 3906 PNP SM

ic an 6651

transistor A2

T2T TRANSISTOR